A-POWER AP85U03GMT

AP85U03GMT
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible
▼ Low On-resistance
BVDSS
30V
RDS(ON)
5mΩ
ID
G
82A
S
D
Description
D
D
D
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low□
on-resistance and cost-effectiveness.
The GEMPAK package is special for DC-DC converters application and
the foot print is compatible with SO-8 with backside heat sink.
S
S
S
G
GEMPAK
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
[email protected]=25℃
Continuous Drain Current
82
A
24
A
Continuous Drain Current
3
[email protected]=100℃
Continuous Drain Current
3
15
A
IDM
Pulsed Drain Current1
200
A
[email protected]=25℃
Total Power Dissipation
50
W
[email protected]=25℃
Total Power Dissipation
5
W
57.6
mJ
[email protected]=25℃
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Value
Parameter
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.5
℃/W
Rthj-a
Thermal Resistance Junction-ambient 3
Max.
25
℃/W
Data & specifications subject to change without notice
201008072-1/4
AP85U03GMT
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
Parameter
Test Conditions
Min.
Typ.
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=20A
-
-
5
mΩ
VGS=4.5V, ID=20A
-
-
10
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Max. Units
gfs
Forward Transconductance
VDS=10V, ID=20A
-
19.5
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=30A
-
29
46
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
6.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
19
-
nC
VDS=15V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
84
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
27
-
ns
tf
Fall Time
RD=0.5Ω
-
83
-
ns
Ciss
Input Capacitance
VGS=0V
-
2400 3840
pF
Coss
Output Capacitance
VDS=25V
-
395
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
390
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=30A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=10A, VGS=0V,
-
33
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec
4.Starting Tj=25oC , VDD=20V , L=0.1mH , RG=25Ω.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP85U03GMT
200
100
o
o
T C =25 C
T C =150 C
10V
7.0 V
80
ID , Drain Current (A)
ID , Drain Current (A)
160
10V
7 .0V
5.0V
4.5 V
5.0V
120
4.5 V
80
60
40
V G =3.0V
40
20
V G = 3.0 V
0
0
0.0
2.0
4.0
6.0
8.0
0.0
V DS , Drain-to-Source Voltage (V)
2.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
14
I D =20A
I D =20A
V G =10V
T C =25 o C
12
Normalized RDS(ON)
1.6
RDS(ON) (mΩ)
10
8
6
1.2
0.8
4
0.4
2
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
T j =150 o C
T j =25 o C
30
1.2
Normalized VGS(th) (V)
IS(A)
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
20
10
0
0.8
0.4
0.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP85U03GMT
16
f=1.0MHz
10000
12
V DS =16V
V DS =20V
V DS =24V
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
8
1000
C oss
C rss
4
100
0
0
15
30
45
1
60
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthja)
Duty factor = 0.5
100
ID (A)
100us
10
1ms
10ms
100ms
DC
o
1
T C =25 C
Single Pulse
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x R thjc + T c
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : GEM-PAK
Millimeters
SYMBOLS
MIN
NOM
MAX
A
0.90
1.00
1.10
b
0.33
0.41
0.51
C
0.20
0.25
0.30
C1
3.48
3.58
3.68
D1
4.80
4.90
5.00
D2
3.61
3.81
3.96
E
5.90
6.00
6.10
E1
5.70
5.75
5.80
E2
3.63
3.83
4.03
e
1.27 BSC
1.All Dimension Are In Millimeters.
H
0.41
0.51
0.61
2.Dimension Does Not Include Mold Protrusions.
K1
1.10
-
-
L
0.51
0.61
0.71
L1
α
0.06
0.13
0.20
0°
-
12°
Part Marking Information & Packing : GEM-PAK
Part Number
Package Code(GMT)
85U03GMT
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence