ETC 2SB0621A(2SB621A)

Transistor
2SB0621, 2SB0621A (2SB621, 2SB621A)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A)
4.0±0.2
5.1±0.2
5.0±0.2
• Low collector to emitter saturation voltage VCE(sat)
• High transition frequency fT
0.7±0.2
■ Features
12.9±0.5
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Collector to
base voltage
2SB0621
Collector to
emitter voltage
2SB0621
Symbol
Rating
VCBO
−30
Unit
V
2.5+0.6
–0.2
−60
2SB0621A
2.5+0.6
–0.2
1
−25
VCEO
0.45+0.15
–0.1
0.45+0.15
–0.1
2 3
2.3±0.2
Parameter
V
−50
2SB0621A
Emitter to base voltage
VEBO
−5
Peak collector current
ICP
−1.5
A
Collector current
IC
−1
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
V
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Collector cutoff current
Collector to base
voltage
2SB0621
Collector to emitter
voltage
2SB0621
Conditions
ICBO
VCB = −20 V, IE = 0
VCBO
IC = −10 µA, IE = 0
Min
Typ
Max
Unit
− 0.1
µA
−30
V
−60
2SB0621A
VCEO
IC = −2 mA, IB = 0
−25
V
−50
2SB0621A
Emitter to base voltage
VEBO
IE = −10 µA, IC = 0
−5
Forward current transfer ratio
hFE1 *
VCE = −10 V, IC = −500 mA
85
VCE = −5 V, IC = −1 A
50
Collector to emitter saturation voltage
VCE(sat)
IC = −500 mA, IB = −50 mA
− 0.2
− 0.4
Base to emitter saturation voltage
VBE(sat)
IC = −500 mA, IB = −50 mA
− 0.85
−1.2
hFE2
Transition frequency
fT
Collector output capacitance
Cob
V
340
VCB = −10 V, IE = 50 mA, f = 200 MHz
200
VCB = −10 V, IE = 0, f = 1 MHz
20
V
V
MHz
30
pF
Note) *: hFE Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2002
SJC00044BED
1
2SB0621, 2SB0621A
PC  Ta
IC  VCE
−9 mA
−8 mA
−7 mA
−6 mA
− 0.75
0.4
−5 mA
−4 mA
−3 mA
− 0.50
0.2
−2 mA
− 0.25
0
20
40
60
80 100 120 140 160
−1 mA
0
VCE(sat)  IC
−10
−3
−1
Ta = 75°C
25°C
−25°C
0
0
−2
−8
−10
−12
hFE  IC
−30
−10
−3
Ta = −25°C
−1
−6
500
IC / IB = 10
25°C
−4
Base current IB (mA)
75°C
− 0.1
VCE = −10 V
400
300
Ta = 75°C
200
25°C
−25°C
100
− 0.03
−1
−3
−10
− 0.01
− 0.01 − 0.03 − 0.1 − 0.3
Collector current IC (A)
Collector output capacitance Cob (pF)
160
120
80
40
2
3
5
10
20 30 50
Emitter current IE (mA)
0
− 0.01 − 0.03 − 0.1 − 0.3
−10
100
40
30
20
10
−2 −3 −5
−10
−20 −30 −50 −100
Collector to base voltage VCB (V)
SJC00044BED
−3
−10
VCER  RBE
IE = 0
f = 1 MHz
Ta = 25°C
0
−1
−1
Collector current IC (A)
Cob  VCB
50
VCB = −10 V
Ta = 25°C
1
−3
Collector current IC (A)
fT  I E
200
−1
−120
Collector to emitter voltage VCER (V)
− 0.01
− 0.01 − 0.03 − 0.1 − 0.3
Transition frequency fT (MHz)
− 0.2
−10
− 0.3
− 0.03
0
−8
−100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
−30
− 0.1
−6
− 0.4
VBE(sat)  IC
IC / IB = 10
− 0.3
−4
− 0.6
Collector to emitter voltage VCE (V)
Ambient temperature Ta (°C)
−100
−2
− 0.8
Forward current transfer ratio hFE
0
−1.0
IB = −10 mA
−1.00
VCE = −10 V
Ta = 25°C
Collector current IC (A)
Collector current IC (A)
Collector power dissipation PC (W)
0.6
−1.2
Ta = 25°C
−1.25
0.8
0
2
IC  IB
−1.50
1.0
IC = −10 mA
Ta = 25°C
−100
−80
−60
2SB0621A
−40
2SB0621
−20
0
0.1
0.3
1
3
10
30
100
Base to emitter resistance RBE (kΩ)
2SB0621, 2SB0621A
ICEO  Ta
104
Area of safe operation (ASO)
−10
VCE = −10 V
Single pulse
Ta = 25°C
−3
ICP
Collector current IC (A)
102
−1
− 0.3
IC
t = 10 ms
t=1s
− 0.1
− 0.01
10
− 0.003
1
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (°C)
− 0.001
− 0.01 − 0.03 − 0.1 − 0.3
−1
2SB0621A
− 0.03
2SB0621
ICEO (Ta)
ICEO (Ta = 25°C)
103
−3
−10
Collector to emitter voltage VCE (V)
SJC00044BED
3
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2001 MAR