Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB0940 (2SB940) and 2SB0940A (2SB940A) ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to 2SD1264 emitter voltage 2SD1264A 180 VEBO 6 V Peak collector current ICP 3 A Collector current IC 2 A dissipation 30 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 150 ˚C –55 to +150 ˚C Symbol Conditions IEBO VEB = 4V, IC = 0 Collector to base voltage VCBO IC = 50µA, IE = 0 VCEO IC = 5mA, IB = 0 2SD1264A Emitter to base voltage Forward current transfer ratio 0.7±0.1 16.7±0.3 4.2±0.2 7.5±0.2 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) min typ 6 60 50 VCE = 10V, IC = 400mA Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA Transition frequency fT VCE = 5V, IC = 0.5A, f = 1MHz µA 50 µA V V 180 IE = 500µA, IC = 0 VCE = 10V, IC = 400mA Unit 50 150 VCE = 10V, IC = 150mA VBE max 200 hFE1* hFE2 FE1 2.54±0.25 VEBO Base to emitter voltage *h 0.5 +0.2 –0.1 VCB = 200V, IE = 0 Emitter cutoff current 2SD1264 0.8±0.1 1.3±0.2 (TC=25˚C) ICBO voltage 1.4±0.1 W 2 Collector cutoff current Collector to emitter φ3.1±0.1 V Emitter to base voltage Collector power TC=25°C 2.7±0.2 5.08±0.5 150 VCEO 4.2±0.2 5.5±0.2 4.0 ● High collector to emitter VCEO Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 10.0±0.2 Solder Dip ■ Features Unit: mm V 240 1 1 20 V V MHz Rank classification Rank Q P hFE1 60 to 140 100 to 240 Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1264, 2SD1264A PC — Ta IC — VCE (1) 30 1.0 20 (2) 10 IB=7mA 0.8 5mA 4mA 0.6 3mA 0.4 2mA 0.2 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 4 8 12 16 20 TC=100˚C 25˚C –25˚C 0.1 0.03 0.03 0.1 0.3 300 TC=100˚C 100 –25˚C 30 10 3 1ms 0.3 DC 0.1 0.03 0.003 0.001 1 3 10 30 100 2SD1264A 0.01 300 Collector to emitter voltage VCE 1000 100 30 10 3 1 0.1 0.3 1 3 0.1 0.01 0.03 10 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 1.2 0.3 103 Thermal resistance Rth(t) (˚C/W) 5ms 1.0 VCE=5V f=1MHz TC=25˚C 300 Collector current IC (A) t=0.5ms 0.8 fT — IC 25˚C 1 0.01 0.03 1 2SD1264 Collector current IC (A) IC 1 0.6 VCE=10V Non repetitive pulse TC=25˚C ICP 3 0.4 1000 Area of safe operation (ASO) 10 0.2 Base to emitter voltage VBE (V) 3000 Collector current IC (A) 2 0 1000 0.01 0.01 0.4 24 10000 Forward current transfer ratio hFE 3 0.3 0.6 hFE — IC IC/IB=10 1 0.8 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Transition frequency fT (MHz) 0 TC=100˚C 0.2 1mA (3) (4) 25˚C 1.0 6mA Collector current IC (A) 40 1.2 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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