Power Transistors 2SD2051 Silicon NPN epitaxial planar type Darlington For low-frequency amplification Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings 16.7±0.3 (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage VCEO 60±10 V Emitter to base voltage VEBO Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C 5 V ICP 2.5 A IC 1.6 A 12 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter W 2.0 4.2±0.2 φ3.1±0.1 4.0 ● 14.0±0.5 ● High foward current transfer ratio hFE Incorporating a built-in zener diode Full-pack package which can be installed to the heat sink with one screw 2.7±0.2 1.4±0.1 Solder Dip ● 5.5±0.2 7.5±0.2 ■ Features 4.2±0.2 10.0±0.2 0.8±0.1 1.3±0.2 +0.2 0.5 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C 150 ˚C –55 to +150 ˚C B E (TC=25˚C) Symbol Conditions min VCB = 25V, IE = 0 typ max Unit 1 µA 1 µA 70 V Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 4V, IC = 0 Collector to base voltage VCBO IC = 100µA, IE = 0 50 Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 70 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 Forward current transfer ratio hFE * VCE = 10V, IC = 1.0A Collector to emitter saturation voltage VCE(sat) IC = 1.0A, IB = 1.0mA Base to emitter saturation voltage VBE(sat) IC = 1.0A, IB = 1.0mA Transition frequency fT VCE = 10V, IC = 10mA, f = 200MHz *h FE 4000 V 40000 1.5 2.2 200 V V MHz Rank classification Rank hFE Q R S 4000 to 10000 8000 to 20000 16000 to 40000 1 Power Transistors 2SD2051 IC — VCE 2 1 70µA 60µA 0.8 50µA 0.6 0.4 40µA 0.2 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 VBE(sat) — IC Forward current transfer ratio hFE 25˚C 100˚C 0.3 0.1 0.03 0.3 1 1 105 25˚C 104 3 Collector current IC (A) 10 25˚C TC=–25˚C 0.3 100˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Cob — VCB TC=100˚C –25˚C 103 102 0.1 3 20 VCE=10V 10 0.01 0.01 0.03 10 hFE — IC IC/IB=1000 TC=–25˚C IC/IB=1000 30 Collector current IC (A) 106 30 1 12 100 Collector to emitter voltage VCE (V) 100 3 10 Collector output capacitance Cob (pF) 0 Base to emitter saturation voltage VBE(sat) (V) 90µA 80µA 1.0 3 0 2 VCE(sat) — IC IB=100µA TC=25˚C Without heat sink Collector current IC (A) Collector power dissipation PC (W) 1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 4 IE=0 f=1MHz TC=25˚C 18 16 14 12 10 8 6 4 2 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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