Power Transistors 2SB1643 Silicon PNP epitaxial planar type ● 1.5±0.1 10.0±0.3 1.0±0.1 1.1max. 2.0 1.5max. High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For power amplification 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 ■ Absolute Maximum Ratings 1 2 1:Base 2:Collector 3:Emitter N Type Package 3 (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –6 V Peak collector current ICP –6 A Collector current IC –3 A Base current IB –1 A Collector power TC=25°C dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 3.0–0.2 +0 4.4±0.5 R0.5 R0.5 0 to 0.4 1.1 max. 5.08±0.5 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) ICBO Collector cutoff current +0.4 1.5–0.4 10.0±0.3 2.0 4.4±0.5 W 1.3 Symbol Parameter 1.0±0.1 2.54±0.3 1 ■ Electrical Characteristics 6.0±0.3 0.8±0.1 40 PC 3.4±0.3 14.7±0.5 Unit: mm 8.5±0.2 max Unit VCB = –60V, IE = 0 –100 µA Conditions min typ ICEO VEB = –40V, IC = 0 –100 µA Emitter cutoff current IEBO VEB = –6V, IC = 0 –100 µA Collector to emitter voltage VCEO IC = –25mA, IB = 0 –60 Forward current transfer ratio hFE* VCE = –4V, IC = – 0.5A 300 Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = – 0.05A Transition frequency fT VCE = –12V, IC = – 0.2A, f = 10MHz *h FE V 700 –1 30 V MHz Rank classification Rank Q P hFE 300 to 500 400 to 700 1 Power Transistors 2SB1643 PC — Ta IC — VCE IC — VBE –6 40 30 (1) 20 –6 TC=25˚C VCE=–4V –5 10 –5 IB=–100mA –80mA –60mA –4 –40mA –3 –20mA –2 –10mA –5mA Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 –1 –4 –3 –2 25˚C TC=125˚C –25˚C –1 (2) –2mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –12 VCE=–4V Transition frequency fT (MHz) TC=100˚C –25˚C – 0.1 – 0.03 –1 –3 TC=100˚C 25˚C 1000 25˚C –3 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –25˚C 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –10 Collector current IC (A) Cob — VCB –1 –3 3 Pulsed tw=1ms Duty cycle=1% IC/IB=40 (–IB1=IB2) VCC=–50V TC=25˚C 10 3 tf 1 ton tstg 0.3 –10 –30 30 10 3 –100 Collector to base voltage VCB (V) –1 –3 –10 Non repetitive pulse TC=25˚C –10 –3 ICP t=1ms IC 10ms –1 300ms – 0.3 0.1 – 0.1 – 0.03 0.01 –3 100 –30 0.03 1 –1 300 Area of safe operation (ASO) Collector current IC (A) 10 –2.0 –100 30 Switching time ton,tstg,tf (µs) 30 –1.6 Collector current IC (A) ton, tstg, tf — IC 100 –1.2 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 100 IE=0 f=1MHz TC=25˚C – 0.8 VCE=–12V f=10MHz TC=25˚C Collector current IC (A) 1000 300 – 0.4 Base to emitter voltage VBE (V) 1000 3000 –10 –1 0 fT — IC IC/IB=40 –30 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –10 hFE — IC 10000 – 0.3 Collector output capacitance Cob (pF) –8 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 2 –6 0 –2 –4 –6 Collector current IC (A) –8 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1643 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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