ETC BD808/D

BD808
BD810 *
Plastic High Power Silicon
PNP Transistor
*ON Semiconductor Preferred Device
. . . designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
10 AMPERE
POWER TRANSISTORS
PNP SILICON
60, 80 VOLTS
90 WATTS
• DC Current Gain —
hFE = 30 (Min) @ IC
= 2.0 Adc
BD 808, 810 are complementary with BD 807, 890
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•
MAXIMUM RATINGS
Symbol
Type
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
BD808
BD810
60
80
Vdc
Collector–Base Voltage
VCBO
BD808
BD810
70
80
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
6.0
Adc
Total Device Dissipation TC = 25C
Derate above 25C
PD
90
720
Watts
mW/C
TJ, Tstg
–55 to +150
C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
θJC
1.39
C/W
CASE 221A–06
TO–220AB
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
Symbol
Type
Min
Max
Unit
BVCEO
BD808
BD810
60
80
—
—
Vdc
BD808
BD810
—
—
1.0
1.0
—
2.0
30
15
—
—
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
DC Current Gain
(IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
hFE
mAdc
mAdc
Collector–Emitter Saturation Voltage*
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
—
1.1
Vdc
Base–Emitter On Voltage*
(IC = 4.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.6
Vdc
fT
1.5
—
MHz
Current–Gain Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 8
1
Publication Order Number:
BD808/D
BD808 BD810
3
dc
TJ = 150°C
1
0.3
0.1
.5 ms
1 ms
1 ms
5 ms
10
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
90
BD808
BD810
3
10
30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
80
70
60
50
40
30
20
10
0
100
0
25
125
150
175
Figure 2. Power–Temperature Derating Curve
2.0
500
1.8
TJ = 25°C
300
1.6
VCE = 2.0 V
TJ = 150°C
1.4
hFE, DC CURRENT GAIN
VOLTAGE (VOLTS)
100
TC, CASE TEMPERATURE (°C)
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
1.2
VBE(sat) @ IC/IB = 10
1.0
0.8
0.6
VCE(sat) @ IC/IB = 10
0.4
0
0.01
0.02
0.05
0.1
0.2 0.3
0.5
1.0
25°C
100
50
- 55°C
10
VBE @ VCE = 2.0 V
0.2
2.0 3.0
5.0
5.0
0.01
IC, COLLECTOR CURRENT (AMP)
0.05 0.1
0.5 1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. “On” Voltages
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
75
50
1.0
0.7
0.5
0.01
0.01
Figure 4. Current Gain
0.2
0.1
SINGLE P(pk)
PULSE
0.05
θJC(t) = r(t) θJC
0.02
0.03
0.02
10
D = 0.5
0.3
0.2
0.1
0.07
0.05
5.0
SINGLE PULSE
0.01
0.02 0.03
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
t, PULSE WIDTH (ms)
Figure 5. Thermal Response
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2
20
30
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200 300
500
1000
BD808 BD810
The data of Figure 1 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Note 1:
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
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3
BD808 BD810
PACKAGE DIMENSIONS
CASE 221A–06
TO–220AB
ISSUE Y
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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4
BD808/D