ETC BD237/D

ON Semiconductor
NPN
BD237
Plastic Medium Power Silicon
NPN Transistor
PNP
BD238
*ON Semiconductor Preferred Device
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
2.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS
25 WATTS
• DC Current Gain —
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hFE = 40 (Min) @ IC = 0.15 Adc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
80
Vdc
Collector–Base Voltage
VCBO
100
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
2.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25C
PD
25
Watts
TJ, Tstg
–55 to +150
C
Symbol
Max
Unit
θJC
5.0
C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 77–09
TO–225AA TYPE
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
80
—
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
hFE1
hFE2
40
25
—
—
Collector–Emitter Saturation Voltage*
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.6
Vdc
Base–Emitter On Voltage*
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.3
Vdc
fT
3.0
—
MHz
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
DC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
Current–Gain — Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
 Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 10
1
Publication Order Number:
BD237/D
BD238
IC, COLLECTOR CURRENT (AMP)
10
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power–temperature derating must be observed for both
steady state and pulse power conditions.
100 µs
1 ms
3
5 ms
TJ = 150°C
1
dc
0.3
0.1
BD236
BD237
3
10
30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
100
Figure 1. Active Region Safe Operating Area
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
IC = 0.1 A
0.25 A
0.5 A
1.0 A
0.6
TJ = 25°C
0.4
0.2
0
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
IB, BASE CURRENT (mA)
20
30
50
100
200
Figure 2. Collector Saturation Region
hFE , DC CURRENT GAIN (NORMALIZED)
1000
700
500
1.5
VCE = 2.0 V
1.2
VOLTAGE (VOLTS)
300
200
100
70
50
30
20
10
2.0 3.0 5.0
TJ = + 150°C
TJ = + 25°C
TJ = + 55°C
10
TJ = 25°C
0.9
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.3
0
2.0 3.0 5.0
20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain
VCE(sat) @ IC/IB = 10
10
20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
http://onsemi.com
2
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
BD238
1.0
0.7
0.5
D = 0.5
0.3
D = 0.2
0.2
D = 0.1
0.1
0.07
0.05
D = 0.05
SINGLE PULSE
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
θJC = 3.5°C/W TYP
D = 0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
0.03
0.02
0.01
0.01
P(pk)
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME or PULSE WIDTH (ms)
Figure 5. Thermal Response
http://onsemi.com
3
20
30
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200 300
500
1000
BD238
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
M
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4
BD237/D