ETC 2N5191/D

ON Semiconductor
2N5191
2N5192 *
Silicon NPN Power Transistors
. . . for use in power amplifier and switching circuits, — excellent
safe area limits. Complement to PNP 2N5194, 2N5195.
*ON Semiconductor Preferred Device
4 AMPERE
POWER TRANSISTORS
SILICON NPN
60–80 VOLTS
40 WATTS
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*MAXIMUM RATINGS
Rating
Symbol
2N5191
2N5192
Unit
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25C
Derate above 25C
PD
40
320
Watts
mW/C
TJ, Tstg
–65 to +150
C
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
θJC
3.12
C
CASE 77–09
TO–225AA TYPE
*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
—
—
—
—
1.0
1.0
—
—
—
—
0.1
0.1
2.0
2.0
—
—
0.1
0.1
—
1.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
2N5191
2N5192
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N5191
2N5192
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125C)
2N5191
2N5192
2N5191
2N5192
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N5191
2N5192
Vdc
ICEO
mAdc
ICEX
mAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
mAdc
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
*Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N5191/D
2N5191 2N5192
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*ELECTRICAL CHARACTERISTICS — continued (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
25
20
10
7.0
100
80
—
—
—
—
0.6
1.4
Unit
ON CHARACTERISTICS
DC Current Gain (2)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
hFE
—
2N5191
2N5192
2N5191
2N5192
(IC = 4.0 Adc, VCE = 2.0 Vdc)
Collector–Emitter Saturation Voltage (2)
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Vdc
Base–Emitter On Voltage (2)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.2
Vdc
fT
2.0
—
MHz
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
hFE , DC CURRENT GAIN (NORMALIZED)
(2) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
*Indicates JEDEC Registered Data.
10
7.0
5.0
TJ = 150°C
VCE = 2.0 V
VCE = 10 V
3.0
2.0
1.0
0.7
0.5
-55°C
25°C
0.3
0.2
0.1
0.004
0.007
0.01
0.02
0.03
0.05
0.1
0.2
0.3
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0
3.0
4.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
2.0
TJ = 25°C
1.6
1.2
IC = 10 mA
100 mA
1.0 A
3.0 A
0.8
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
5.0 7.0 10
3.0
IB, BASE CURRENT (mA)
20
Figure 2. Collector Saturation Region
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30
50
70
100
200
300
500
2N5191 2N5192
θV, TEMPERATURE COEFFICIENTS (mV/°C)
2.0
TJ = 25°C
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 4.0
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
10-1
REVERSE
10-2
25°C
FORWARD
ICES
-0.2 -0.1
0
+0.5
*θV for VCE(sat)
0
-0.5
-1.0
-1.5
θV for VBE
-2.0
-2.5
0.005
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 4.0
+0.1 +0.2 +0.3
+0.4 +0.5
+0.6
107
VCE = 30 V
IC = 10 x ICES
106
IC ≈ ICES
105
IC = 2 x ICES
104
103
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
102
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Collector Cut–Off Region
Figure 6. Effects of Base–Emitter Resistance
300
VCC
TJ = +25°C
RC
Vin
RB
200
SCOPE
CAPACITANCE (pF)
TURN-ON PULSE
APPROX
+11 V
Vin 0
VEB(off)
+1.0
Figure 4. Temperature Coefficients
100°C
10-3
-0.4 -0.3
+1.5
Figure 3. “On” Voltages
TJ = 150°C
100
*APPLIES FOR IC/IB ≤
IC, COLLECTOR CURRENT (AMP)
VCE = 30 V
101
[email protected] 2.0V
2
TJ = -65°C to +150°C
+2.0
IC, COLLECTOR CURRENT (AMP)
103
102
+2.5
Cjd<<Ceb
t1
APPROX
+11 V
-4.0 V
t3
t1 ≤ 7.0 ns
100 < t2 < 500 µs
t3 < 15 ns
Vin
t2
TURN-OFF PULSE
RB and RC varied
to obtain desired
current levels
100
Ceb
70
50
30
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
Ccb
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Switching Time Equivalent Test Circuit
Figure 8. Capacitance
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10
20 30 40
2N5191 2N5192
2.0
2.0
IC/IB = 10
TJ = 25°C
1.0
0.7
0.5
0.7
0.5
t, TIME (s)
µ
tr @ VCC = 30 V
0.3
0.2
tr @ VCC = 10 V
0.1
0.07
0.05
td @ VEB(off) = 2.0 V
0.03
0.02
0.05 0.07 0.1
0.5 0.7 1.0
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
2.0
ts′
1.0
tf @ VCC = 30 V
0.3
0.2
Figure 9. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
TJ = 150°C
2.0
dc
1.0
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT AT TC = 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
2N5191
0.5
0.2
0.1
1.0
2.0
3.0 4.0
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T J(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
100µs
1.0ms
5.0ms
0.5 0.7 1.0
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
Figure 10. Turn–Off Time
10
5.0
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
0.1
0.07
0.05
0.03
0.02
0.05 0.07 0.1
3.0 4.0
tf @ VCC = 10 V
2N5192
2.0
5.0
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 11. Rating and Thermal Data
Active–Region Safe Operating Area
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.1
0.07
0.05
θJC(max) = 3.12°C/W 2N5190-92
θJC(max) = 2.08°C/W MJE5190-92
0.2
0.1
0.05
0.02
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2
0.3 0.5
1.0
2.0
3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
Figure 12. Thermal Response
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20
50
100
200
500
1000
2N5191 2N5192
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
A train of periodical power pulses can be represented by
the model shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find θJC(t), multiply the value obtained from Figure 12
by the steady state value θJC.
Example:
The 2N5190 is dissipating 50 watts under the following
conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in function temperature is therefore:
tP
PP
PP
t1
1/f
t1
tP
PEAK PULSE POWER = PP
DUTY CYCLE, D = t1 f -
Figure A
∆T = r(t) x PP x θJC = 0.27 x 50 x 3.12 = 42.2C
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2N5191 2N5192
PACKAGE DIMENSIONS
TO–225AA
CASE 77–09
ISSUE W
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
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DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
2N5191 2N5192
Notes
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2N5191 2N5192
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2N5191/D