ETC BD241C/D

ON Semiconductor
Complementary Silicon Plastic
Power Transistors
NPN
BD241C*
PNP
BD242C*
. . . designed for use in general purpose amplifier and switching
applications.
• Collector–Emitter Saturation Voltage —
•
•
•
*ON Semiconductor Preferred Device
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C
High Current Gain — Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO–220 AB Package
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
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MAXIMUM RATINGS
Symbol
BD241C
BD242C
Unit
Collector–Emitter Voltage
VCEO
100
Vdc
Collector–Emitter Voltage
VCES
115
Vdc
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
3.0
5.0
Adc
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
40
0.32
Watts
W/C
TJ, Tstg
–65 to +150
C
Rating
Emitter–Base Voltage
Operating and Storage Junction
Temperature Range
CASE 221A–09
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
62.5
C/W
Thermal Resistance, Junction to Case
RθJC
3.125
C/W
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 3
1
Publication Order Number:
BD241C/D
BD241C BD242C
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
BD241C BD242C
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ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage1
(IC = 30 mAdc, IB = 0)
BD241C, BD242C
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD241C, BD242C
Collector Cutoff Current
(VCE = 100 Vdc, VEB = 0)
BD241C, BD242C
VCEO
Vdc
100
ICEO
0.3
mAdc
µAdc
ICES
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
200
IEBO
mAdc
1.0
ON CHARACTERISTICS1
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
25
10
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 600 Adc)
VCE(sat)
Base–Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
Vdc
1.2
Vdc
1.8
DYNAMIC CHARACTERISTICS
Current Gain – Bandwidth Product2
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
Small–Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
MHz
3.0
20
1 Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
2 fT = |hfe| • ftest.
APPROX
+ 11 V
TURNON PULSE
2.0
VCC
Vin
RL
1.0
0.7
0.5
SCOPE
RK
t1
APPROX
+ 11 V
Vin
t2
TURNOFF PULSE
t3
t, TIME (s)
µ
CjdCeb
Vin 0
VEB(off)
- 4.0 V
t1 7.0 ns
100 t2 500 µs
t3 15 ns
0.3
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
DUTY CYCLE 2.0%
APPROX - 9.0 V
tr @ VCC = 30 V
IC/IB = 10
TJ = 25°C
Figure 2. Switching Time Equivalent Circuit
td @ VBE(off) = 2.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
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3
3.0
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
BD241C BD242C
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZθJC (t) = r(t) RθJC
RθJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) ZθJC(t)
DUTY CYCLE, D = t1/t2
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
100
200
500 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Thermal Response
10
5.0
1.0 ms
5.0 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C, TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
2.0
1.0
SECOND BREAKDOWN
LIMITED @ TJ 150°C
THERMAL LIMITATION @ TC = 25°C
BONDING WIRE LIMITED
0.5
0.2
CURVES APPLY BELOW
RATED VCEO
0.1
5.0
BD241C, BD242C
10
20
50
IC, COLLECTOR CURRENT (AMP)
100
Figure 5. Active Region Safe Operating Area
1.0
0.7
0.5
0.3
0.2
ts′
tf @ VCC = 30 V
300
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
tf @ VCC = 10 V
0.1
100
Ceb
70
50
0.07
0.05
0.03
0.03
TJ = + 25°C
200
CAPACITANCE (pF)
t, TIME (s)
µ
3.0
2.0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
30
0.1
2.0 3.0
Figure 6. Turn–Off Time
Ccb
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
20 30 40
BD241C BD242C
hFE, DC CURRENT GAIN
300
100
70
50
VCE = 2.0 V
TJ = 150°C
25°C
-55°C
30
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
TJ = 25°C
1.6
1.2
IC = 0.3 A
0.4
0
3.0
1.0
θV, TEMPERATURE COEFFICIENTS (mV/°C)
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.020.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (A)
µ
+1.5
+1.0
*θVC FOR VCE(sat)
+0.5
0
-0.5
-1.0
-1.5
θVB FOR VBE
-2.0
-2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3
0.5
1.0
Figure 11. Temperature Coefficients
101
TJ = 150°C
100
100°C
REVERSE
FORWARD
25°C
ICES
-0.1
0
+0.1 +0.2
+0.3
1000
*APPLIES FOR IC/IB ≤ 5.0
TJ = - 65°C TO + 150°C
+2.0
Figure 10. “On” Voltages
VCE = 30 V
10-3
-0.4 -0.3 -0.2
500
IC, COLLECTOR CURRENT (AMP)
102
10-2
10
20
50
100 200
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
103
10-1
5.0
+2.5
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
V, VOLTAGE (VOLTS)
TJ = 25°C
1.0
0.6
2.0
Figure 9. Collector Saturation Region
1.4
0.8
3.0 A
0.8
Figure 8. DC Current Gain
1.2
1.0 A
+0.4 +0.5
+0.6
2.0 3.0
107
106
105
IC ≈ ICES
IC = 2 x ICES
104
103
102
VCE = 30 V
IC = 10 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
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5
BD241C BD242C
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AB
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
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6
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BD241C BD242C
Notes
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7
BD241C BD242C
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BD241C/D