DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance. 3 source, connected to flange APPLICATIONS 1 • Avionics transmitter applications in the 1030 to 1090 MHz frequency range. 3 DESCRIPTION 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. Top view MBK584 Fig.1 Simplified outline (SOT467C). QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 1030 to 1090 36 10 >15 >40 MODE OF OPERATION Pulsed class-AB; tp = 50 µs; δ = 2 % ORDERING INFORMATION PACKAGE TYPE NUMBER BLA1011-10 NAME DESCRIPTION VERSION − flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage − ±15 V ID drain current (DC) − 2.2 A Ptot total power dissipation − 25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C 2003 Nov 19 Th ≤ 25 °C 2 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Zth(j-mb) thermal impedance from junction to mounting base Tmb = 25 °C; note 1 1.2 K/W Rth(mb-h) thermal resistance from mounting base to heatsink note 2 0.55 K/W MAX. UNIT Notes 1. Thermal impedance is determined under RF operating conditions with pulsed bias. 2. Typical value for SOT467C mounted with thermal compound and 0.6 Nm fastening torque. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.7 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 20 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 0.1 mA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 2.8 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 40 nA gfs forward transconductance VDS = 10 V; ID = 0.75 A − 0.5 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 0.75 A − 1.2 − Ω APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.55 K/W unless otherwise specified. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) tr (ns) tf (ns) PULSE DROOP (dB) Pulsed class-AB; tp = 50 µs; δ = 2% 1030 to 1090 36 50 10 >15 >40 <20 <20 <0.5 Ruggedness in class-AB operation The BLA1011-10 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the operating conditions. Typical impedance values FREQUENCY (MHz) ZS (Ω) ZL (Ω) 1030 1 + j 10.6 4.3 + j 7 1060 1.3 + j 6.99 5.99 + j 13.98 1090 1.42 + j 7 7 + j 11.58 2003 Nov 19 3 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 MGU494 PL (W) 24 Gp (dB) 20 10 16 15 MGU493 ηD handbook, halfpage handbook, halfpage 60 η D (%) 50 Gp 40 (1) (2) 12 (1) (2) 30 (3) (3) 5 8 20 4 10 0 0 0 50 100 PD (mW) 150 0 10 5 Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB; tp = 50 µs; δ = 2%. (1) f = 1090 MHz. (2) f = 1060 MHz. (3) f = 1030 MHz. Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB; tp = 50 µs; δ = 2%. (1) f = 1090 MHz. (2) f = 1060 MHz. (3) f = 1030 MHz. Fig.2 Fig.3 Load power as a function of drive power; typical values. MGU495 24 p (dB) 20 PL (W) 0 15 Power gain and efficiency as functions of load power; typical values. MGU496 12 handbook, halfpage handbook, G halfpage PL (W) 8 16 12 4 8 4 0 1000 0 1040 1080 f (MHz) 0 1120 1 2 3 5 VGS (V) Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB; PL = 10 W; tp = 50 µs; δ = 2%. Th = 25 °C; VDS = 36 V; IDQ = 50 mA; class-AB; f = 1090 MHz; tp = 50 µs; δ = 2%. Fig.4 Fig.5 Power gain as a function of frequency; typical values. 2003 Nov 19 4 4 Load power as a function of gate-source voltage; typical values. Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 51.75 handbook, full pagewidth 51.75 C13 C14 C12 C7 C6 C5 C1 C2 C3 C9 C4 C11 R1 60 C8 C15 C10 3.2 3.5 13.5 6.0 37.5 9.3 MGU497 Dimensions in mm. The components are situated on one side of the Rogers 6006 printed-circuit board (thickness = 0.64 mm; εr = 6.2), the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through-metallization. Fig.6 Printed-circuit board for class-AB test circuit. List of components for class-AB test circuit (see Fig.6) COMPONENT DESCRIPTION VALUE C1 multilayer ceramic chip capacitor; note 1 2.7 pF C2, C11 multilayer ceramic chip capacitor; note 1 56 pF C3 tekelec trimmer; type 37293 0.8 to 8 pF C4 multilayer ceramic chip capacitor; note 1 3.6 pF C5 multilayer ceramic chip capacitor; note 1 6.2 pF C6 multilayer ceramic chip capacitor; note 1 2 pF C7, C13 multilayer ceramic chip capacitor; note 1 62 pF C8 multilayer ceramic chip capacitor; note 1 11 pF C9 multilayer ceramic chip capacitor; note 1 1.5 pF C10 multilayer ceramic chip capacitor; note 1 6.2 pF C12 multilayer ceramic chip capacitor; note 2 20 nF C14 electrolytic capacitor 4.7 µF; 50 V C15 multilayer ceramic chip capacitor; note 1 36 pF R1 SMD resistor (0805) 22 Ω Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 200B or capacitor of same quality. 2003 Nov 19 5 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-06 99-12-28 SOT467C 2003 Nov 19 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). LEVEL DEFINITION Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Nov 19 7 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Nov 19 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/05/pp9 Date of release: 2003 Nov 19 Document order number: 9397 750 12244