POWEREX CM2400HC

CONFIDENTIAL
Revision: C
Prepared by
S.Iura
Date
I.Umezaki 5-Sep.-2011
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
th
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HIGH POWER SWITCHING USE
INSULATED TYPE
COMPANY PROPRIETARY
NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC
WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION
CM2400HC-34N
●IC ………………………
2400 A
●VCES …………………… 1700 V
●Insulated Type
●1-element in a Pack
●AlSiC Baseplate
●Trench Gate IGBT : CSTBTTM
●Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Dimensions in mm
HVM-1035-C
1 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
th
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MAXIMUM RATINGS
Symbol
Conditions
Item
Ratings
Unit
VCES
Collector-emitter voltage
VGE = 0V, Tj = 25 °C
1700
V
VGES
Gate-emitter voltage
VCE = 0V, Tj = 25 °C
± 20
V
DC, Tc = 75 °C
(Note 1)
Pulse
DC
(Note 1)
Pulse
2400
4800
2400
4800
A
A
A
A
13100
W
IC
ICM
IE
IEM
Collector current
Emitter current
(Note 2)
Pc
Maximum power dissipation
(Note 3)
Viso
Isolation voltage
Tj
Junction temperature
Tc = 25 °C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
4000
V
−40 ~ +150
°C
Top
Operating temperature
−40 ~ +125
°C
Tstg
Storage temperature
−40 ~ +125
°C
Tpsc
Maximum short circuit pulse width
10
µs
VCC =1200V, VCE ≤ VCES, VGE =15V, Tj =125°C
ELECTRICAL CHARACTERISTICS
Symbol
ICES
Item
—
8.0
Tj = 125 °C
16.0
VCE = 10 V, IC = 240 mA, Tj = 25 °C
6.0
7.0
8.0
V
VGE = VGES, VCE = 0V, Tj = 25°C
—
—
0.5
µA
nF
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
VCE(sat)
Collector-emitter saturation voltage
td(on)
Turn-on delay time
tr
Turn-on rise time
Turn-on switching energy
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25 °C
VCC = 850 V, IC = 2400 A
VGE = ±15V, Tj = 25 °C
(Note 5)
Unit
6.0
IGES
Output capacitance
Max
—
VGE(th)
Coes
Typ
—
VCE = VCES, VGE = 0V
Cies
Min
Tj = 25 °C
Collector cutoff current
Eon(10%)
Limits
Conditions
(Note 4)
mA
—
352
—
—
19.2
—
nF
—
5.6
—
nF
—
24.5
—
µC
Tj = 25 °C
—
2.15
2.80
Tj = 125 °C
—
2.40
—
VCC = 850 V, IC = 2400 A
—
—
1.50
µs
VGE = ±15 V, RG(on) = 0.7 Ω
—
—
0.70
µs
—
0.64
—
J/P
IC = 2400 A
VGE = 15 V
Tj = 125 °C, Ls = 100 nH
Inductive load
V
td(off)
Turn-off delay time
VCC = 850 V, IC = 2400 A
—
—
3.00
µs
tf
Turn-off fall time
VGE = ±15 V, RG(off) = 1.6 Ω
—
—
0.60
µs
Eoff(10%)
Turn-off switching energy
(Note 5)
—
0.84
—
J/P
VEC
Emitter-collector voltage
(Note 2)
trr
Reverse recovery time
Qrr
Reverse recovery charge
Erec (10%)
Reverse recovery energy
Tj = 125 °C, Ls = 100 nH
Inductive load
IE = 2400 A
(Note 4)
VGE = 0 V
(Note 2)
(Note 2)
(Note 2),(Note 5)
Tj = 25 °C
—
2.60
3.30
Tj = 125 °C
—
2.30
—
V
VCC = 850 V, IE = 2400 A
—
—
1.50
µs
VGE = ±15 V, RG(on) = 0.7 Ω
—
620
—
µC
—
0.38
—
J/P
Tj = 125 °C, Ls = 100 nH
Inductive load
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
2 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
th
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Item
Thermal resistance
Conditions
Junction to Case, IGBT part
Limits
Min
Typ
Max
—
—
9.5
Unit
K/kW
Rth(j-c)R
Thermal resistance
Junction to Case, FWDi part
—
—
21.0
K/kW
Rth(c-f)
Contact thermal resistance
Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm
—
8.0
—
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Mt
Ms
Conditions
M8: Main terminals screw
Mounting torque
Mt
Limits
Min
Typ
Max
7.0
—
20.0
Unit
N·m
M6: Mounting screw
3.0
—
6.0
N·m
M4: Auxiliary terminals screw
1.0
—
3.0
N·m
—
0.8
—
kg
m
Mass
CTI
Comparative tracking index
600
—
—
—
da
Clearance
19.5
—
—
mm
dS
Creepage distance
32.0
—
—
mm
LP CE
Parasitic stray inductance
—
16
—
nH
RCC’+EE’
Internal lead resistance
—
0.14
—
mΩ
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Tc = 25 °C
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (Tj) should not exceed Tjmax rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
3 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
th
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
5000
5000
Tj = 125°C
VCE = 20V
VGE = 20V
4000
4000
Collector Current [A]
Collector Current [A]
VGE = 15V
VGE = 12V
3000
VGE = 10V
2000
1000
Tj = 125°C
3000
Tj = 25°C
2000
1000
VGE = 8V
0
0
0
1
2
3
4
5
6
0
Collector - Emitter Voltage [V]
5
10
15
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
5000
5000
VGE = 15V
4000
Tj = 25°C
Emitter Current [A]
Collector Current [A]
4000
Tj = 125°C
3000
2000
1000
Tj = 125°C
Tj = 25°C
3000
2000
1000
0
0
0
1
2
3
4
Collector-Emitter Saturation Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
0
1
2
3
4
Emitter-Collector Voltage [V]
HVM-1035-C
4 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
th
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
10000
VCE = 850V, IC = 2400A
Tj = 25°C
15
Gate-Emitter Voltage [V]
1000
Capacitance [nF]
Cies
100
Coes
10
10
5
0
-5
-10
VGE = 0V, Tj = 25°C
f = 100kHz
Cres
1
-15
0.1
1
10
0
100
10
Collector-Emitter Voltage [V]
30
40
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
3
5
VCC = 850V, VGE = ±15V
RG(on) = 0.7 Ω, RG(off) = 1.6 Ω
Tj = 125°C, Inductive load
2.5
VCC = 850V, IC = 2400A
VGE = ±15V, Tj = 125°C
Inductive load
Eoff
4
Switching Energies [J/P]
Switching Energies [J/P]
20
2
1.5
Eon
1
Erec
0.5
Eon
3
Eoff
2
1
Erec
0
0
0
1000
2000
3000
4000
5000
Collector Current [A]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
0
2
4
6
8
10
12
Gate Resistance [Ω]
HVM-1035-C
5 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
th
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
10
100
td(on)
1
tf
0.1
tr
0.01
100
Irr
10
1000
trr
1
100
0
1000
10000
Collector Current [A]
100
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
Switching Times [µs]
td(off)
10000
VCC = 850V, VGE = ±15V
RG(on) = 0.7 Ω
Tj = 125°C, Inductive load
VCC = 850V, VGE = ±15V
RG(on) = 0.7 Ω, RG(off) = 1.6 Ω
Tj = 125°C, Inductive load
10
10000
1000
Emitter Current [A]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 9.5 K/kW
Rth(j-c)R = 21.0 K/kW
1
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
6 of 7
CONFIDENTIAL
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
th
4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
SHORT CIRCUIT SAFE OPERATING AREA
(SCSOA)
6000
25000
VCC ≤ 1200V, VGE = ±15V
Tj = 125°C, RG(off) ≥ 1.6 Ω
VCC ≤ 1200V, VGE = ±15V
RG(on) ≥ 0.7Ω, RG(off) ≥ 1.6Ω
Tj = 125°C, tpsc ≤ 10µs
20000
Collector Current [A]
Collector Current [A]
5000
4000
3000
2000
15000
10000
5000
1000
0
0
0
500
1000
1500
2000
Collector-Emitter Voltage [V]
0
500
1000
1500
2000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
3000
Reverse Recovery Current [A]
VCC ≤ 1200V, di/dt ≤ 4700A/µs
Tj = 125°C
2500
2000
1500
1000
500
0
0
500
1000
1500
2000
Collector-Emitter Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C
7 of 7