FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W (Typ.) High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS • Solid State Base-Station Power Amplifier. • W-CDMA and IMT 2000 Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 125 W Tc = 25°C Total Power Dissipation PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with gate resistance of 10Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Pinch-Off Voltage Gate-Source Breakdown Voltage Symbol IDSS Vp VGSO Output Power Pout Linear Gain GL Drain Current IDSR Power-Added Efficiency ηadd Thermal Resistance Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 151mA IGS = -1.51mA VDS = 12V f = 2.17 GHz IDS = 1.5A Pin = 39dBm Channel to Case CASE STYLE: IU Edition 1.0 February 2000 1 Min. Limits Typ. Max. Unit - 6 - A -0.1 -0.3 -0.5 V -5 - - V 47.0 48.0 - dBm 11.0 12.0 - dB - 9 13 A - 51 - % - 0.8 1.2 °C/W FLL600IQ-2C L-Band High Power GaAs FET ACP vs. OUTPUT POWER -25 -30 -35 IMD vs. OUTPUT POWER VDS = 12V IDS = 1.5A f = 2.14GHz ∆f = 1MHz VDS = 12V IDS = 1.5A fo = 2.14GHz W-CDMA Single Signal -5MHz +5MHz -10MHz +10MHz -30 -35 -40 -40 IMD (dBc) ACP (dBc) Wide Band Tuned +IM3 +IM5 -45 -50 -45 -50 -55 -55 -60 -60 -65 -65 35 36 37 38 39 40 41 42 43 44 34 35 36 Output Power (dBm) 37 38 39 40 41 42 43 44 Output Power (dBm) OUTPUT POWER & ηadd vs. INPUT POWER OUTPUT POWER vs. FREQUENCY VDS = 12V IDS = 1.5A Wide Band Tuned 48 46 50 VDS =12V IDS = 1.5A f = 2.17GHz Wide Band Tuned 46 40dBm 44 38dBm 36dBm 34dBm 32dBm 42 30dBm 42 40 Pout 50 38 36 40 ηadd 34 30 32 20 30 10 40 28dBm 38 28 26dBm 36 20 24 28 32 Input Power (dBm) 24dBm 34 22dBm 1.99 2.02 2.05 2.08 2.11 2.14 2.17 2.20 2.23 2.26 2.29 2.32 Frequency (GHz) 2 36 40 ηadd (%) Output Power (dBm) 48 Output Power (dBm) 44 FLL600IQ-2C L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 750mA FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4200 4300 4400 4500 S11 S21 MAG ANG .923 .916 .897 .880 .856 .828 .794 .751 .710 .672 .641 .619 .615 .629 .670 .722 .788 .852 .883 .878 .816 .671 .304 .364 .489 .638 .726 .778 .802 .820 .836 .839 .835 .823 .769 .342 168.0 166.5 164.7 163.1 161.4 159.9 158.3 157.3 156.9 157.7 159.0 162.1 164.7 167.3 168.5 167.8 162.7 153.7 140.8 123.3 98.1 60.6 3.9 23.2 -29.8 -65.9 -92.2 -109.9 -122.9 -132.5 -141.3 -149.1 -156.7 -165.2 -177.9 139.7 MAG .798 .811 .844 .879 .933 1.006 1.102 1.198 1.301 1.420 1.510 1.612 1.703 1.819 1.924 2.094 2.178 2.227 2.156 2.093 2.019 1.899 1.349 1.195 1.167 1.023 .790 .621 .499 .443 .401 .380 .363 .360 .364 .514 S12 ANG MAG 51.9 46.7 40.3 33.0 25.3 16.3 6.5 -4.8 -16.3 -30.4 -44.9 -60.8 -74.8 -90.9 -107.0 -123.3 -143.8 -165.4 172.6 151.0 127.8 101.7 72.0 74.8 53.6 30.1 11.3 -1.7 -10.6 -16.0 -23.6 -29.6 -37.3 -44.0 -49.0 -52.9 .009 .010 .012 .014 .014 .018 .017 .020 .022 .022 .022 .020 .018 .013 .009 .006 .011 .018 .030 .039 .057 .063 .060 .035 .037 .039 .035 .037 .038 .032 .034 .037 .049 .070 .131 .381 S22 ANG 50.4 46.2 46.0 43.1 41.4 32.5 28.8 17.0 11.9 -2.9 -15.0 -26.2 -42.8 -66.7 -90.6 -149.2 131.7 101.8 80.0 54.9 37.0 9.4 -32.3 -27.7 -30.9 -34.4 -41.6 -47.1 -44.1 -55.1 -41.3 -38.8 -30.3 -29.1 -26.5 -63.5 MAG ANG .853 .845 .841 .835 .828 .828 .833 .847 .864 .887 .905 .907 .906 .882 .841 .785 .703 .637 .602 .611 .649 .716 .800 .815 .831 .846 .857 .863 .863 .865 .864 .865 .865 .861 .862 .822 175.2 174.8 175.0 175.1 175.4 176.0 176.4 176.7 176.6 175.6 173.9 171.2 168.5 165.0 161.8 160.5 160.4 163.6 169.5 175.9 -179.3 -177.1 -179.1 177.0 174.7 172.5 170.0 167.4 165.3 163.1 160.3 157.5 154.3 150.9 146.4 137.7 Download S-Parameters, click here 3 FLL600IQ-2C L-Band High Power GaAs FET 1 2.0 (0.079) ±0.15 4 5 2.5 MIN. 4-R1.3 (0.051) 17.4 (0.685) 8.0 (0.315) 3 ±0.2 0.1 (0.004) ±0.2 2 2.5 MIN. Case Style "IQ" ±0.2 6.0 (0.236) ±0.13 2.4 (0.094) ±0.2 4.4 Max. 1.9 (0.075) 16.4 (0.646) 1, 2: Gate 3: Source 4, 5: Drain Unit: mm (inches) ±0.2 20.4 (0.803) ±0.2 24.0 (0.945) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FME, QDD (European Sales Office) Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI1199M200 4