HUASHAN HS13003

N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HS13003
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg ——Storage Temperature………………………… -65~150℃
T j ——Junction Temperature…………………………………150℃
P C ——Collector Dissipation…………………………………30W
VCBO——Collector-Base Voltage………………………………600V
1―Base,B
2―Collector,C
3― Emitter,E
VCEO——Collector-Emitter Voltage……………………………400V
V EB O ——Emitter-Base Voltage………………………………9V
I C ——Collector Current……………………………………1.5A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
600
V
IC=1mA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
400
V
IC=10mA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
9
V
IE=1mA, IC=0
DC Current Gain
10
HFE
VCE=10V, IC=0.1A
40
VCE(sat)1
Collector- Emitter Saturation Voltage
0.8
V
IC=1A, IB=500mA
VCE(sat)2
Collector- Emitter Saturation Voltage
0.8
V
IC=0.5A, IB=100mA
VBE(sat)
Base-Emitter Saturation Voltage
1.2
V
IC=0.5A, IB=100mA
ICBO
Collector Cut-off Current
10
μA
VCB=500V, IE=0
IEBO
Emitter-Base Cut-off Current
10
μA
VEB=9V, IC=0
VCE=10V,IC=0.1A,f=1MHz
1.1
MHz
μs
fT
tON
Current Gain-Bandwidth Product
Turn On Time
tSTG
Storage Time
4.0
μs
IB1=0.2A,IB2=-0.2A
Fall Time
0.7
μs
RL=125Ω
tF
8
VCC=125V, IC=1A,
█ hFE Classification
H1
H2
H3
H4
10-16
14-21
19-26
24-31
H5
29-40