SEMICONDUCTOR KRC681T~KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES 1 High emitter-base voltage : VEBO=25V(Min) G High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) B C 2 F A Low on resistance : Ron=1 (Typ.) (IB=5mA) DIM MILLIMETERS _ 0.2 A 2.9 + 5 3 4 D G With Built-in Bias Resistors. Simplify Circuit Design. 5 C J Q1 E MAXIMUM RATING (Ta=25 J D _ 0.1 0.4 + E F G H I J K L 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H 4 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR) R1 B L EQUIVALENT CIRCUIT (TOP VIEW) EQUIVALENT CIRCUIT I C Reduce a Quantity of Parts and Manufacturing Process. 1.6+0.2/-0.1 _ 0.05 0.70 + Q2 1 2 3 TSV ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 25 V IC 300 mA PC * 0.9 W Tj 150 Tstg -55 150 Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 ) MARK SPEC TYPE hFE classification B KRC681T MQB KRC682T MRB KRC683T MSB KRC684T MTB KRC685T MUB KRC686T MVB 2002. 12. 5 Revision No : 3 Marking h FE Rank 5 4 Lot No. Type Name 1 2 3 1/2 KRC681T~KRC686T ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage BVCEO IC=1mA 20 - - V Collector-Base Breakdown Voltage BVCBO IC=50 A 50 - - V Emitter-Base Breakdown Voltage BVEBO IE=50 A 25 - - V VCB=50V, IE=0 - - 0.1 A VCE(sat) IC=30mA, IB=3mA - - 0.1 V hFE VCE=2V, IC=4mA 350 - 1200 KRC681T - 2.2 - KRC682T - 4.7 - - 5.6 - - 6.8 - KRC685T - 10 - KRC686T - 22 - ICBO Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC683T Input Resistor KRC684T R1 k Transition Frequency fT * VCE=6V, IC=4mA, - 30 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 - pF * Characteristic of Transistor Only. Note) hFE Classification 2002. 12. 5 B:350 1200 Revision No : 3 2/2