MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 4-C2 High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High Efficiency: 50%typ. 9.6+/-0.3 FEATURES 24.0+/-0.6 1 2 +0.05 R1.6+/-0.15 3 APPLICATION 0.1 -0.01 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in 800-900MHz Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 10.0+/-0.3 RoHS Compliance, is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 125 25 15 175 -40 to +175 1.2 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER IDSS IGSS VTH Pout ηD Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance (Tc=25°C UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=900MHz ,VDD=12.5V Pin=15W,Idq=2.0A VDD=15.2V,Po=45W(PinControl) Idq=2.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.0 45 45 LIMITS TYP MAX. 10 1 3.0 50 50 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD45HMF1 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE CHANNEL DISSIPATION Pch(W) 160 Vgs-Ids CHARACTERISTICS 10 8 120 6 Ids(A) 80 4 40 2 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 6 Vgs=3.4V Vgs=3.1V 4 Vgs=2.8V 2 150 100 50 Vgs=2.5V Vgs=2.2V 0 0 4 6 Vds(V) 8 4 Ta=+25°C f=1MHz 200 2 3 250 Vgs=3.7V Ciss(pF) Ids(A) 8 0 2 Vgs(V) 300 Vgs=4V Ta=+25°C 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 500 40 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 400 30 300 Crss(pF) Coss(pF) 1 Vds VS. Ciss CHARACTERISTICS 10 200 20 10 100 0 0 0 RD45HMF1 Ta=+25°C Vds=10V 5 10 Vds(V) 15 0 20 MITSUBISHI ELECTRIC 2/7 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 60 20 40 ηｄ Gp Ｉｄｄ 10 20 0 50 30 35 Pin(dBm) 40 80 30 60 20 40 Idd 10 0 0 10 15 Pin(W) 20 25 60 Idd 20 8 15 6 10 20 Ids(A) Po +25°C 10 Idd(A) Po(W) 5 Vgs-Ids CHARACTERISTICS 2 25 40 20 0 45 100 80 100 Po ηd Vdd-Po CHARACTERISTICS Ta=25°C f=900MHz Pin=15W Idq=2A Zg=ZI=50 ohm 120 40 0 25 Ta=25°C f=900MHz Vdd=12.5V Idq=2A 60 80 30 140 ηd(%) 40 100 Pout(W) , Idd(A) Po(dBm) , Gp(dB) , Idd(A) 50 70 Po ηd(%) Ta=+25°C f=900MHz Vdd=12.5V Idq=2A Pin-Po CHARACTERISTICS Vds=10V Tc=-25~+75°C 4 2 5 +75°C -25°C 0 RD45HMF1 0 0 4 6 8 10 Vdd(V) 12 1.5 14 MITSUBISHI ELECTRIC 3/7 2.5 Vgs(V) 3.5 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W TEST CIRCUIT(f=900MHz) V gg C1 V dd 9.1K OHM 100OHM 8.2k OHM C1 5/5pF f= 900M Hz 100pF 330uF,50V 5pF L1 L1 RF-IN RF-OUT 56pF 56pF 5pF 2pF 2pF 5/5pF 5/5pF 3pF 1pF 12 10 4 18 17 53 41 77 14 49 83 90 100 90 100 Dim ensions :m m Note:B oard m aterial-Teflon subs trate C1:2200pF*2 in parallel M icro s trip line width= 4.2m m /50OHM ,er:2.7,t= 1.6m m L1:1Turns ,I.D3m m ,D1.5m m silver plateted c opper wire RD45HMF1 8 MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=900MHz Zout f=900MHz Zin Zo=10Ω RD45HMF1 Zin , Zout f (MHz) Zin (ohm) Zout (ohm) 900 1.53-j0.17 1.63+j0.34 Conditions Po=45W, Vdd=12.5V,Pin=15W MITSUBISHI ELECTRIC 5/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 RD45HMF1 S11 (mag) 0.902 0.911 0.917 0.932 0.941 0.945 0.950 0.955 0.959 0.961 0.964 0.963 0.966 0.967 0.965 0.969 0.969 0.966 0.967 0.963 0.963 0.961 0.956 0.955 0.954 0.949 0.949 0.948 0.943 0.939 S21 (ang) -177.8 -179.0 -179.6 179.9 178.7 177.7 176.6 175.5 174.4 173.6 171.6 170.3 168.5 167.0 165.3 163.0 161.1 158.8 156.3 153.9 150.9 148.3 145.2 142.3 139.3 136.1 133.0 129.6 126.3 123.0 (mag) 4.481 2.125 1.319 0.889 0.642 0.497 0.384 0.318 0.265 0.226 0.178 0.166 0.147 0.109 0.106 0.102 0.106 0.113 0.122 0.106 0.101 0.093 0.094 0.096 0.091 0.093 0.081 0.083 0.086 0.087 S12 (ang) 77.4 63.5 52.3 43.0 35.6 30.2 23.3 18.7 15.6 11.1 9.0 7.6 2.2 0.3 8.8 16.2 10.0 4.1 -3.7 1.7 1.7 -6.4 -4.9 -6.1 -10.5 -12.6 -16.4 -19.7 -24.1 -31.6 (mag) 0.008 0.011 0.011 0.007 0.005 0.004 0.005 0.006 0.008 0.008 0.012 0.009 0.013 0.016 0.014 0.022 0.021 0.024 0.026 0.028 0.031 0.031 0.037 0.038 0.041 0.044 0.045 0.046 0.048 0.061 MITSUBISHI ELECTRIC 6/7 S22 (ang) 0.7 -26.0 -1.0 -25.4 24.9 14.3 60.8 66.9 66.0 33.5 74.4 52.8 71.1 70.5 57.8 71.3 78.6 65.7 64.1 59.4 57.5 55.0 54.6 52.0 47.9 43.8 40.7 33.2 32.8 10.7 (mag) 0.864 0.877 0.895 0.924 0.936 0.937 0.948 0.954 0.951 0.956 0.962 0.961 0.966 0.961 0.958 0.968 0.956 0.960 0.965 0.955 0.958 0.961 0.953 0.949 0.958 0.943 0.946 0.948 0.937 0.934 (ang) -176.6 -177.8 -179.0 179.7 178.8 177.6 176.2 174.6 173.7 172.5 170.8 169.6 168.1 166.1 164.6 163.2 161.1 159.5 156.7 154.6 152.0 148.9 145.6 142.9 138.9 135.4 132.3 127.9 124.3 120.9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD45HMF1 Silicon MOSFET Power Transistor 900MHz,45W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD45HMF1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006