TOSHIBA SSM3J130TU

SSM3J130TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J130TU
○ Power Management Switch Applications
1.5 V drive
Low ON-resistance:RDS(ON) = 63.2 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 41.1 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 31.0 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 25.8 mΩ (max) (@VGS = -4.5 V)
Unit: mm
2.1±0.1
Symbol
Rating
Drain-Source voltage
VDSS
-20
V
Gate-Source voltage
VGSS
±8
V
DC
ID
-4.4
Pulse
IDP
-8.8
PD (Note 1)
800
PD (Note 2)
500
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Drain current
Drain power dissipation
Unit
A
mW
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2)
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
+0.1
0.3 -0.05
3
2
0.166±0.05
Characteristic
1
0.7±0.05
Absolute Maximum Ratings (Ta = 25°C)
0.65±0.05
1.7±0.1
2.0±0.1
•
•
1: Gate
2: Source
UFM
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Equivalent Circuit (top view)
3
3
JJC
1
2
1
2
1
2009-05-11
SSM3J130TU
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Symbol
Test Conditions
V (BR) DSS ID = -1 mA, VGS = 0 V
V (BR) DSX ID = -1 mA, VGS = 5 V
(Note 4)
Min
Typ.
Max
Unit
-20
⎯
⎯
-15
⎯
⎯
⎯
⎯
-1
μA
V
Drain cut-off current
IDSS
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
S
Gate threshold voltage
⏐Yfs⏐
Forward transfer admittance
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
VDS = -3 V, ID = -2.0 A
(Note 3)
8.8
17.5
⎯
ID = -4.0 A, VGS = -4.5 V
(Note 3)
⎯
20.9
25.8
ID = -4.0 A, VGS = -2.5 V
(Note 3)
⎯
24.2
31.0
ID = -2.5 A, VGS = -1.8 V
(Note 3)
⎯
28.8
41.1
ID = -1.5 A, VGS = -1.5 V
(Note 3)
⎯
32.4
63.2
VDS = -10 V, VGS = 0 V
f = 1 MHz
⎯
1800
⎯
⎯
205
⎯
⎯
190
⎯
Turn-on time
ton
VDD = -10 V, ID = -1.5 A
⎯
25
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
133
⎯
⎯
24.8
⎯
⎯
18.0
⎯
Reverse transfer capacitance
Switching time
VDS = -20 V, VGS = 0 V
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Drain-Source forward voltage
VDSF
VDS = -10 V, IDS = - 4.4 A,
VGS =- 4.5 V
ID = 4.4 A, VGS = 0 V
(Note 3)
mΩ
pF
ns
nC
⎯
6.8
⎯
⎯
0.83
1.2
V
Note3: Pulse test
Note4: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum
rating of drain-source voltage.
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
90%
-2.5 V
RG
-2.5V
10 μs
RL
VDD
(c) VOUT
VDD = -10 V
RG = 4.7 Ω
D.U. <
= 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below −1 mA for the
SSM3J130TU. Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2009-05-11
SSM3J130TU
ID – VDS
-10
-1.8 V
-8V
ID
ID
Drain current
-6.0
Drain current
-1
(A)
-4.5V
-2.5V
-4.0
-2.0
0
Common Source
Ta = 25 °C
0
-0.2
Common Source
VDS = -3 V
VGS = -1.2 V
-1.5 V
-8.0
(A)
ID – VGS
-10
-0.4
-0.6
-0.8
Drain–source voltage
VDS
-0.1
Ta = 100 °C
-25 °C
-0.01
25 °C
-0.001
-0.0001
0
-1
-0.5
(V)
Gate–source voltage
RDS (ON) – VGS
ID =-4.0A
Common Source
Ta = 25°C
50
25 °C
Ta = 100 °C
-25 °C
0
0
-2
-4
-6
Gate–source voltage
VGS
50
-2.5 V
-1.5 V
-1.8V
VGS = -4.5 V
0
-8
0
(V)
-2.0
-4.0
ID
-1.5 A / -1.5 V
-4.0 A / -2.5 V
ID = -4.0 A / VGS = -4.5 V
0
−50
0
50
Ambient temperature
-10
(A)
Common Source
VDS = -3 V
ID = -1 mA
Vth (V)
-2.5 A / -1.8V
-8.0
Vth – Ta
-1.0
Gate threshold voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
-6.0
Drain current
Common Source
50
(V)
Common Source
Ta = 25°C
RDS (ON) – Ta
100
VGS
RDS (ON) – ID
100
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
100
-1.5
-1.0
100
Ta
-0.5
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2009-05-11
3
1
0.3
0.1
-0.01
-1
-0.1
Drain current
ID
1
IDR
G
S
0.1
Ta =100 °C
25 °C
0.01
-25 °C
0.001
0
-10
0.4
0.2
(A)
0.6
Drain–source voltage
C – VDS
10000
Common Source
VGS = 0 V
D
(A)
IDR
10
10
Common Source
VDS = -3 V
Ta = 25°C
Drain reverse current
⎪Yfs⎪
30
IDR – VDS
|Yfs| – ID
100
Forward transfer admittance
(S)
SSM3J130TU
0.8
VDS
(pF)
C
tf
1000
t
(ns)
Ciss
500
300
Switching time
Capacitance
1000
(V)
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
toff
3000
1.2
t – ID
10000
5000
1.0
Coss
Crss
100
50
30
10
-0.1
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
-1
-10
Drain–source voltage
VDS
100
ton
10
tr
1
-0.001
-100
(V)
-0.01
-0.1
Drain current
-1
ID
-10
(A)
Dynamic Input Characteristic
-8
Gate–source voltage
VGS
(V)
Common Source
ID = -4.4 A
Ta = 25°C
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
10
20
30
Total Gate Charge
40
Qg
50
(nC)
4
2009-05-11
SSM3J130TU
rth
– tw
PD – Ta
1000
c
Drain power dissipation PD (mW)
Transient thermal impedance Rth (°C/W)
600
b
100
a
10
1
0.001
Single pulse
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
c: Mounted on FR4 Board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.36 mm2×3)
0.01
0.1
1
Pulse Width
10
100
a: Mounted on ceramic board
(25.4mm × 25.4mm × 0.8mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
800
600
b
400
200
0
-40
600
tw (s)
a
-20
0
20
40
60
80
Ambient temperature
5
100
120 140
Ta
(°C)
160
2009-05-11
SSM3J130TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2009-05-11