TOSHIBA SSM3J327R

SSM3J327R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J327R
○ Power Management Switch Applications
+0.08
1.5-V drive
Low ON-resistance: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)
0.05 M A
0.42 -0.05
+0.08
0.17 -0.07
2.4±0.1
3
1.8±0.1
•
•
Unit: mm
1
2
0.95
Absolute Maximum Ratings (Ta = 25°C)
0.95
2.9±0.2
Symbol
Rating
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
DC
ID (Note 1)
-3.9
Pulse
IDP (Note 1)
-7.8
Drain current
Drain power dissipation
PD (Note 2)
A
1
t = 10s
A
Unit
0.8+0.08
-0.05
Characteristic
1: Gate
2: Source
W
2
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
SOT-23F
3: Drain
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-3Z1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 11 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking (Top View)
Equivalent Circuit
3
3
KFG
1
2
1
2
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SSM3J327R
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
Unit
-20
⎯
⎯
V
-15
⎯
⎯
V
⎯
⎯
-1
μA
V (BR) DSS ID = -1 mA, VGS = 0 V
V (BR) DSX ID = -1 mA, VGS = 5 V
(Note 4)
Drain cut-off current
IDSS
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
S
Gate threshold voltage
⏐Yfs⏐
Forward transfer admittance
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
VDS = -3 V, ID = -1.0 A
(Note 3)
2.8
5.6
⎯
ID = -1.5 A, VGS = -4.5 V
(Note 3)
⎯
78.5
93
ID = -1.0 A, VGS = -2.5 V
(Note 3)
⎯
97.5
123
ID = -0.5 A, VGS = -1.8 V
(Note 3)
⎯
120
168
ID = -0.25 A, VGS = -1.5 V
(Note 3)
⎯
141
240
⎯
290
⎯
⎯
44
⎯
VDS = -10 V, VGS = 0 V
f = 1 MHz
⎯
32
⎯
Turn-on time
ton
VDD = -10 V, ID = -0.5 A
⎯
12.0
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
46.2
⎯
⎯
4.6
⎯
⎯
3.4
⎯
Reverse transfer capacitance
Switching time
VDS = -20 V, VGS = 0 V
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Drain-source forward voltage
VDSF
VDD = -10 V, IDS = -3.9 A,
VGS = -4.5 V
ID = 3.9 A, VGS = 0 V
(Note 3)
⎯
1.2
⎯
⎯
0.97
1.2
mΩ
pF
ns
nC
V
Note3: Pulse test
Note4: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximun
rating of drain-source voltage
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
90%
OUT
0
IN
10%
−2.5 V
RG
−2.5V
10 μs
RL
(c) VOUT
VDS (ON)
90%
VDD
VDD = -10 V
RG = 4.7 Ω
Duty.≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
10%
VDD
tr
ton
tf
toff
Notice on Usage
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the
SSM3J327R). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and drain power dissipation PD vary depending on board material, board area, board
thickness and pad area. When using this device, please take heat dissipation into consideration
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2009-11-16
SSM3J327R
ID – VDS
ID – VGS
-8
-10
-2.5V
-4.5V
-1
(A)
(A)
-1.8 V
Drain current
Drain current
ID
ID
-6
VGS = -1.5 V
-4
-2
0
Common Source
Ta = 25 °C
0
-0.2
-0.4
-0.6
-0.8
Drain–source voltage
VDS
Common Source
VDS = -3 V
-0.1
-25 °C
Ta = 100 °C
-0.01
25 °C
-0.001
-0.0001
0
-1
-1.0
(V)
Gate–source voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
200
25 °C
Ta = 100 °C
100
-25 °C
-2
-4
-6
Gate–source voltage
VGS
VGS = -4.5 V
0
-2.0
-4.0
-6.0
ID
-8.0
(A)
Vth – Ta
-1.0 A / -2.5 V
-0.5 A / -1.8V
-0.25 A / -1.5 V
100
ID = -1.5 A / VGS = -4.5 V
Ambient temperature
-2.5 V
100
-1.0
200
50
-1.8V
Drain current
Common Source
0
200
(V)
RDS (ON) – Ta
0
−50
Common Source
Ta = 25°C
100
Ta
Common Source
VDS = -3 V
ID = -1 mA
Vth (V)
Drain–source ON-resistance
RDS (ON) (mΩ)
300
(V)
-1.5 V
0
-8
Gate threshold voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
300
ID =-1.5A
Common Source
0
VGS
RDS (ON) – ID
RDS (ON) – VGS
300
0
-2.0
-0.5
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2009-11-16
SSM3J327R
10
Common Source
VDS = -3 V
Ta = 25°C
IDR
Drain reverse current
Forward transfer admittance
3
1
0.3
0.1
-0.01
-1
-0.1
Drain current
ID
Common Source
VGS = 0 V
D
(A)
(S)
⎪Yfs⎪
IDR – VDS
|Yfs| – ID
10
1
IDR
G
S
-25 °C
0.1
Ta =100 °C
0.001
0
-10
0.5
(A)
1.0
Drain–source voltage
C – VDS
1000
25 °C
0.01
VDS
(V)
t – ID
10000
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
toff
300
1000
(ns)
Ciss
tf
100
30
Switching time
Capacitance
t
C
(pF)
1.5
Coss
Common Source
Crss
Ta = 25 °C
f = 1 MHz
VGS = 0 V
100
10 ton
tr
10
-0.1
-1
-10
Drain-source voltage
VDS
1
-0.001
-100
(V)
-0.01
-0.1
Drain current
-1
ID
-10
(A)
Dynamic Input Characteristic
-8
Gate–source voltage
VGS
(V)
Common Source
ID = -3.9 A
Ta = 25°C
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
2
4
Total gate charge
6
8
Qg
10
(nC)
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2009-11-16
SSM3J327R
rth
– tw
PD – Ta
1000
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.72 mm2 ×3)
b
Drain power dissipation PD (mW)
Transient thermal impedance
rth (°C/W )
1600 a: Mounted on FR4 board
a
100
10
Single pulse
a. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm2×3)
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1200
a
800
400
0
-40
1000
b
-20
0
20
40
60
80
Ambient temperature
(s)
5
100
120 140
Ta
(°C)
160
2009-11-16
SSM3J327R
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
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applicable laws or regulations.
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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