BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W (NPN) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFT 92W SOT-323 W1s Q62702-F1681 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 25 Base current IB 3 Total power dissipation Ptot TS ≤ 105 °C Values Unit V mA mW 200 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 225 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFT 92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base cutoff current 15 - 100 IEBO µA - - 10 hFE IC = 15 mA, VCE = 8 V Semiconductor Group nA - VEB = 2 V, IC = 0 DC current gain - ICBO VCB = 10 V, IE = 0 Emitter-base cutoff current V 15 2 50 - Dec-11-1996 BFT 92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 3.5 pF - 0.58 0.9 - 0.3 - - 0.77 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 2 - f = 1.8 GHz - 3.2 - f = 900 MHz - 14 - f = 1.8 GHz - 8.5 - f = 900 MHz - 11.5 - f = 1.8 GHz - 6 - Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFT 92W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.5354 fA BF = 98.533 VAF = 10.983 V IKF = NE = 1.1172 - VAR = 47.577 NC = - NF = 0.90551 - 0.016123 A ISE = 12.196 fA BR = 10.297 NR = 1.2703 - V IKR = 0.019729 A ISC = 0.024709 fA 1.206 - RB = 7.9562 Ω IRB = 0.79584 mA RBM = 1.5939 Ω RE = 1.5119 Ω RC = 0.66749 Ω CJE = 1.7785 fF VJE = 0.79082 V MJE = 0.32167 - TF = 32.171 ps XTF = 0.30227 - VTF = 0.21451 V ITF = 0.013277 mA PTF = 0 deg CJC = 922.07 fF VJC = 1.2 V MJC = 0.3 - XCJC = 0.3 - TR = 2.0779 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.75167 - TNOM 300 K LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0 nH LCO = 0.41 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFT 92W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 150 TS 100 TA 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/PtotDC - K/W 10 2 D=0 0.005 0.1 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-11-1996 BFT 92W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter Ccb 1.8 6.0 pF GHz fT 1.4 10V 8V 5.0 4.5 1.2 5V 4.0 1.0 3.5 3V 3.0 2V 0.8 0.6 2.5 0.4 1V 2.0 0.7V 0.2 1.5 0.0 1.0 0 2 4 6 8 10 12 14 16 V 20 0 5 10 15 20 VR Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 16 10.0 dB dB mA IC 30 10V G 10V 14 G 13 5V 12 3V 11 2V 8.0 5V 7.0 3V 6.0 2V 5.0 10 4.0 9 1V 3.0 1V 8 2.0 7 0.7V 1.0 0.7V 6 5 0.0 0 5 Semiconductor Group 10 15 20 mA IC 30 0 6 5 10 15 20 mA IC 30 Dec-11-1996 BFT 92W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 35 16 IC=15mA dB 0.9GHz 12 0.9GHz dBm G IP3 8V 3V 25 2V 10 20 1.8GHz 8 1V 15 1.8GHz 6 10 4 5 2 0 0 0 2 4 6 8 V 12 0 5 10 15 20 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 35 mA IC 30 30 IC=15mA IC=15mA dB dB G S21 25 20 20 15 15 10 10 5 10V 10V 2V 5 0 0.0 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 2V 1V 0.7V 0 -5 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-11-1996