Power Transistors 2SD2133 Silicon NPN epitaxial planar type For low-frequency power amplification driver Unit: mm 90˚ • Low collector-emitter saturation voltage VCE(sat) 0.85±0.1 1.0±0.1 0.8 C ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 16.0±1.0 2.5±0.1 0.65±0.1 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 10.8±0.2 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V ICBO VCB = 20 V, IE = 0 Collector-base cutoff current (Emitter open) hFE1 *1, 2 Forward current transfer ratio hFE2 *1 hFE3 Conditions VCE = 10 V, IC = 0.5 A Min Typ 85 VCE = 5 V, IC = 1 A 50 VCE = 10 V, IC = 1 mA 35 Max Unit 0.1 µA 340 100 Collector-emitter saturation voltage VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 11 pF Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date: May 2003 SJD00244BED 1 2SD2133 PC Ta IC VCE Ta=25˚C IB=10mA 9mA 1.0 8mA 1.6 0.8 5mA 0.8 4mA 0.6 3mA 0.4 0.4 2mA 0.2 0 80 120 160 2 1 10−1 Ta=75˚C Ta=25˚C Ta=–25˚C 10−2 8 10 12 0 2 100 Ta=–25˚C 0.1 1 000 1 fT I E 100 Collector output capacitance C (pF) (Common base, input open circuited) ob 160 200 Ta=75˚C Ta=25˚C 150 Ta=–25˚C 100 50 0 1 000 1 10 120 80 40 −100 15 10 5 1 10 Collector-base voltage VCB (V) SJD00244BED 1 000 VCER RBE 20 0 100 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 25 12 250 100 30 10 VCE=10V Cob VCB VCB=10V f=200MHz TC=25˚C Emitter current IE (A) 10 8 300 Collector current IC (mA) 200 −10 Ta=25˚C Ta=75˚C 6 hFE IC 10 1 4 Base current IB (mA) IC/IB=10 Collector current IC (mA) 0 −1 6 100 0.01 10 4 VBE(sat) IC IC/IB=10 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 1 0.4 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 10 0.6 0 0 Forward current transfer ratio hFE 40 0.8 0.2 1mA 100 Collector-emitter voltage (V) (Resistor between B and E) VCER 0 Transition frequency fT (MHz) 1.0 7mA Collector current IC (A) 1.2 0 2 VCE=10V Ta=25˚C 6mA Collector current IC (A) Collector power dissipation PC (W) Without heat sink 10−3 IC I B 1.2 1.2 2.0 IC=10mA TC=25˚C 80 60 40 20 0 0.1 1 10 100 Base-emitter resistance RBE (kΩ) 2SD2133 ICBO Ta 104 Safe operation area 10 VCE=10V Single pulse TC=25˚C ICP Collector current IC (A) ICBO (Ta) ICBO (Ta = 25°C) 103 102 10 1 0 40 80 120 1 IC t=10ms DC 10−1 10−2 10−3 0.1 160 Ambient temperature Ta (°C) 1 10 100 Collector-emitter voltage VCE (V) Rth t Thermal resistance Rth (°C/W) 104 Without heat sink 103 102 10 1 10−1 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00244BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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