Si4926DY New Product Vishay Siliconix Asymmetrical Dual N-Channel 30-V (D-S) MOSFET VDS (V) Channel-1 30 Channel-2 rDS(on) () ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0125 @ VGS = 10 V 10.5 0.017 @ VGS = 4.5 V 9.0 D1 D2 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D2 S2 3 6 D2 G2 4 5 D2 G1 G2 S1 Top View S2 N-Channel 1 MOSFET N-Channel 2 MOSFET Channel 1 P Parameter S b l Symbol 10 secs Channel 2 Steady State 10 secs Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25C TA = 70C Operating Junction and Storage Temperature Range IS PD 5.3 10.5 5.4 4.2 8.5 30 7.5 6.0 40 1.3 0.9 2.2 1.15 1.4 1.0 2.4 1.25 0.9 0.64 1.5 0.80 TJ, Tstg U i Unit V 6.3 IDM Steady State A W C –55 to 150 Channel 1 P Parameter Maximum Junction-to-Ambienta S b l Symbol t 10 sec Steady-State Maximum Junction-to-Foot (Drain) Steady-State RthJA RthJC Typ Channel 2 Max Typ Max 72 90 43 53 100 125 82 100 51 63 25 30 U i Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71143 S-00238—Rev. A, 21-Feb-00 www.vishay.com FaxBack 408-970-5600 2-1 Si4926DY New Product Vishay Siliconix Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) VDS = VGS, ID = 250 mA IGSS VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = 24 V, VGS = 0 V, TJ = 85C On-State Drain Currenta a D i S O S R i Drain-Source On-State Resistance ID(on) rDS(on) Forward Transconductancea gfs Diode Forward Voltagea VSD VDS = 5 V, VGS = 10 V Ch-1 0.8 Ch-2 0.8 V Ch-1 100 Ch-2 100 Ch-1 1 Ch-2 1 Ch-1 15 nA A mA 15 Ch-2 Ch-1 20 Ch-2 30 A VGS = 10 V, ID = 6.3 A Ch-1 0.018 0.022 VGS = 10 V, ID = 10.5 A Ch-2 0.0105 0.0125 VGS = 4.5 V, ID = 5.4 A Ch-1 0.024 0.030 VGS = 4.5 V, ID = 9.0 A Ch-2 0.0135 0.017 VDS = 15 V, ID = 6.3 A Ch-1 17 VDS = 15 V, ID = 10.5 A Ch-2 28 IS = 1.3 A, VGS = 0 V Ch-1 0.7 1.1 IS = 2.2 A, VGS = 0 V Ch-2 0.72 1.1 Ch-1 8.0 12 Ch Channel-1 Channel l1 VDS = 15 V, VGS = 5 V, ID = 6.3 A Ch-2 18 25 Ch-1 1.75 Channel-2 VDS = 15 V V, VGS = 5 V, V ID = –10.5 10 5 A Ch-2 3.6 Ch-1 3.2 Ch-2 7.8 Ch-1 10 20 Ch-2 13 30 Ch-1 5 10 Ch-2 10 20 Ch-1 26 50 Ch-2 37 80 Ch-1 8 16 Ch-2 27 50 IF = 1.3 A, di/dt = 100 A/ms Ch-1 30 60 IF = 2.2 A, di/dt = 100 mA/ms Ch-2 35 70 W S V Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr Ch Channel l1 Channel-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Channel-2 VDD = 15 V V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Fall Time tf Source-Drain Reverse Recovery Time trr nC C ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 71143 S-00238—Rev. A, 21-Feb-00 Si4926DY New Product Vishay Siliconix Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 4 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 3V 18 12 6 18 12 TC = 125C 6 25C 1V –55C 2V 0 0 0 2 4 6 8 10 0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 1.5 r 0.04 800 0.03 VGS = 4.5 V VGS = 10 V 3.0 3.5 4.0 Ciss 600 400 Coss Crss 200 0.01 0 0 0 6 12 18 24 0 30 6 ID – Drain Current (A) 12 18 24 30 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Gate Charge 1.8 10 VDS = 15 V ID = 6.3 A r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 2.5 Capacitance 1000 C – Capacitance (pF) DS(on) – On-Resistance ( ) On-Resistance vs. Drain Current 0.05 0.02 2.0 VGS – Gate-to-Source Voltage (V) 8 6 4 1.6 VGS = 10 V ID = 6.3 A 1.4 1.2 1.0 0.8 2 0.6 0 0 3 6 9 Qg – Total Gate Charge (nC) Document Number: 71143 S-00238—Rev. A, 21-Feb-00 12 15 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4926DY New Product Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 DS(on) – On-Resistance ( W ) TJ = 150C 10 TJ = 25C r I S – Source Current (A) 40 0.08 0.06 0.04 ID = 6.3 A 0.02 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.6 100 80 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.4 –0.0 –0.2 60 40 –0.4 –0.6 20 –0.8 –1 –50 0 –25 0 25 50 75 100 TJ – Temperature (C) 125 150 0.001 0.01 0.1 1 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 www.vishay.com FaxBack 408-970-5600 2-4 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71143 S-00238—Rev. A, 21-Feb-00 Si4926DY New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 4 V 32 I D – Drain Current (A) I D – Drain Current (A) 32 3V 24 16 8 24 16 TC = 125C 8 25C 1, 2 V –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 0.5 1.0 2.5 3.0 3.5 4.0 Capacitance On-Resistance vs. Drain Current 2000 0.024 1600 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 2.0 VGS – Gate-to-Source Voltage (V) 0.030 0.018 VGS = 4.5 V VGS = 10 V 0.012 1.5 0.006 Ciss 1200 800 Coss 400 Crss 0 0 0 8 16 24 ID – Drain Current (A) Document Number: 71143 S-00238—Rev. A, 21-Feb-00 32 40 0 6 12 18 24 30 VDS – Drain-to-Source Voltage (V) www.vishay.com FaxBack 408-970-5600 2-5 Si4926DY New Product Vishay Siliconix Gate Charge On-Resistance vs. Junction Temperature 1.8 VDS = 15 V ID = 10.5 A 8 6 4 2 VGS = 10 V ID = 10.5 A 1.6 r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 10 1.4 1.2 1.0 0.8 0 0 6 12 18 24 0.6 –50 30 –25 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.06 40 DS(on) – On-Resistance ( W ) 0.05 TJ = 150C 10 TJ = 25C 0.04 0.03 ID = 10.5 A 0.02 r I S – Source Current (A) 0 0.01 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 VSD – Source-to-Drain Voltage (V) Threshold Voltage 8 10 Single Pulse Power, Junction-to-Ambient 100 0.2 80 ID = 250 mA –0.0 Power (W) V GS(th) Variance (V) 6 VGS – Gate-to-Source Voltage (V) 0.4 –0.2 60 40 –0.4 20 –0.6 –0.8 –50 0 –25 0 25 50 75 100 TJ – Temperature (C) www.vishay.com FaxBack 408-970-5600 2-6 4 125 150 0.001 0.01 0.1 1 10 Time (sec) Document Number: 71143 S-00238—Rev. A, 21-Feb-00 Si4926DY New Product Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71143 S-00238—Rev. A, 21-Feb-00 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com FaxBack 408-970-5600 2-7