FDS3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6.3 A, 100 V. RDS(ON) = 32 mΩ @ VGS = 10 V RDS(ON) = 35 mΩ @ VGS = 6 V • Low gate charge (57 nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • Fast switching speed • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D • High power and current handling capability D D SO-8 S S S 4 6 3 7 2 8 1 G Absolute Maximum Ratings Symbol 5 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current 6.3 A – Continuous (Note 1a) – Pulsed PD 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0 -55 to +150 °C (Note 1a) 50 °C/W (Note 1) 25 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3670 FDS3670 13’’ 12mm 2500 units 2000 Fairchild Semiconductor Corporation FDS3670 Rev C(W) FDS3670 November 2000 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 50 V, ID = 6.3 A 360 mJ 6.3 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ===∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics 100 V 92 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ===∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C –7.2 22 39 24 ID(on) On–State Drain Current VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A,TJ = 125°C ID = 5.7 A VGS = 6 V, VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 6.3 A 31 S VDS = 50 V, f = 1.0 MHz V GS = 0 V, 2490 pF 265 pF 80 pF 2 2.5 4 V mV/°C 32 64 35 25 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 50 V, VGS = 10 V, VDS = 50 V, VGS = 10 V ID = 1 A, RGEN = 6 Ω ID = 25 A, 16 26 ns 10 18 ns 56 84 ns 25 40 ns 57 80 nC 11 nC 15 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.72 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1in2 pad of 2 oz copper b) 105 °C/W when mounted on a 0.04 in2 pad of 2 oz copper c) 125 °C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper FDS3670 Rev C(W) FDS3670 Electrical Characteristics FDS3670 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Typical Characteristics 2 60 I D, DRAIN CURRENT (A) 50 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5.0V 4.5V V GS = 10V 5.5V 40 30 4.0V 20 10 1.8 1.6 VGS = 4.0V 1.4 4.5V 1.2 5.0V 5.5V 7.0V 10V 1 3.5V 0.8 0 0 1 2 3 4 0 5 10 20 Figure 1. On-Region Characteristics. 50 60 0.06 ID = 7.2A VGS = 10V 2 ID = 3.6A RDS(ON), ON-RESISTANCE (Ω ) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.05 TA = 125 oC 0.04 0.03 0.02 TA = 25oC 0.01 0 -50 -25 0 25 50 75 100 125 150 3 4 5 TJ, JUNCTION TEMPERATURE (oC) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 I S, REVERSE DRAIN CURRENT (A) V GS = 0V VDS = 5V 50 I D, DRAIN CURRENT (A) 30 I D, DIRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 40 30 125oC 20 25oC 10 TA = -55oC 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3670 Rev C(W) FDS3670 Typical Characteristics 4500 I D = 25A 8 f = 1MHz V GS = 0 V 4000 VDS = 20V 50V 3500 80V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 3000 CISS 2500 2000 1500 1000 2 CRSS COSS 500 0 0 0 10 20 30 40 50 0 60 20 40 60 80 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 100 SINGLE PULSE RθJA = 125oC/W RDS(ON) LIMIT 100µs 10 40 1ms 10ms POWER (W) I D, DRAIN CURRENT (A) 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100ms 1 1s 10s DC V GS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 30 20 10 TA = 25oC 0.01 0.1 1 10 100 0 0.001 1000 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area. TRANSI ENT THER MAL RESISTANCE 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 125°C/ W 0.2 0.1 0.05 P(pk) 0.02 0.02 t1 0.01 0.01 S in gle Pulse t2 TJ - TA = P * RθJA (t) 0.005 D u t y C y c l e, D = t 1 /t 2 0.002 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t 1, TI ME (s e c) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS3670 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G