INTEGRATED CIRCUITS DATA SHEET PCF5078 Power amplifier controller for GSM and PCN systems Product specification File under Integrated Circuits, IC17 1999 Apr 12 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 FEATURES APPLICATIONS • Compatible with baseband interface family PCF5073x • Global System for Mobile communication (GSM) • Two power sensor inputs • Personal Communications Network (PCN) systems. • Temperature compensation of sensor signal • Active filter for DAC input GENERAL DESCRIPTION • Power Amplifier (PA) protection against mismatching This CMOS device integrates an amplifier for the detected RF voltage from the sensor, an integrator and an active filter to build a PA control loop for cellular systems with a small amount of passive components. • Bias current source for detector diodes • Generation of pre-bias level for PA at start of burst (home position) • Possibility to adapt home position by external components • Applicable for a wide range of silicon and GaAs power amplifiers. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VDD supply voltage 2.4 3.6 5.0 V IDD(tot) total supply current − − 6 mA Tamb operating ambient temperature −40 − +85 °C ORDERING INFORMATION TYPE NUMBER PCF5078T 1999 Apr 12 PACKAGE NAME DESCRIPTION TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3.0 mm 2 VERSION SOT505-1 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 BLOCK DIAGRAM handbook, full pagewidth antenna sensor RF PA D1 D2 VINT VS2 VS1 4 3 VC 2 S1 1 C4 S2 R2 10 pF C1 S5 6 pF 20 kΩ OP1 C2 1 kΩ R1 OP4 PCF5078 6 pF 30 µA R4 6 kΩ VDD VDD 10 µA R3 Vhome S1 S2 S3 S4 S5 50 kΩ C3 VDAC 5 pF 5 VSS 6 VDD 7 CONTROL LOGIC 8 MGS193 VDAC VHOME VDD AUXDAC3 PCF5073x Fig.1 Block diagram. 1999 Apr 12 10 µA Vprebias 15 kΩ 30 µA VDD S3 S4 R6 VDD 3 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems An external Digital-to-Analog Converter (DAC) with10-bit resolution is necessary to control the loop e.g. the AUXDAC3 of the baseband interface family PCF5073x. PINNING SYMBOL PIN DESCRIPTION VC 1 PA control output voltage VINT 2 negative integrator input VS1 3 sensor signal input 1 VS2 4 sensor signal input 2 VSS 5 ground supply VDAC 6 DAC input voltage VHOME 7 home position input voltage VDD 8 supply voltage PCF5078 An integrated active filter smooths the voltage steps of the DAC and avoids a feedthrough of the DAC harmonics into the modulation spectra of the PA. The DAC signal and the sensor signal are added by operational amplifier OP1. The voltage difference of both signals is integrated by operational amplifier OP4, which provides the PA control voltage on pin VC. The integration is performed by means of an external capacitance CVINT connected between pins VINT and VC. The shape of the rising and falling power burst edges can be determined by means of the DAC voltage (see Fig.3). Power-down mode handbook, halfpage 8 VDD VC 1 VINT 2 7 VHOME VS1 3 6 VDAC VS2 4 5 VSS During the not used time slots in Time Division Multiple Access (TDMA) systems, the PCF5078 must be turned off by switching off the supply voltage on pin VDD. PCF5078 Initial conditions and start-up The PCF5078 has been designed to operate in bursts as required in TDMA systems. For each time slot to be transmitted it must be powered-up by switching on the supply voltage. This allows a proper initialization of switches S1 to S5. MGS194 Fig.2 Pin configuration. During start-up switches S1, S2 and S3 are closed and switches S4 and S5 are opened (see Fig.4). FUNCTIONAL DESCRIPTION The forward voltages on the Schottky diodes are sampled on capacitors C1 and C2, respectively, because switch S1 is closed. Moreover, the control voltage on pin VC is initially forced to pre-bias level Vprebias because switches S2 and S3 are closed and switch S4 is opened. General The PCF5078 integrates an amplifier for the detected RF voltage from the sensor, an integrator and an active filter to build a PA control loop with a small amount of passive components. Switch S1 is opened after a fixed time the supply voltage has been switched on and then the circuit is ready. This time is defined on-chip and can be maximum 45 µs. Once switch S1 is open, a ramp signal with a minimum amplitude of 25 mV applied on pin VDAC determines opening of switch S3 and closing of switch S4 with a delay of maximum 3 µs with respect to the start of the ramp. The sensor amplifier is able to amplify signals from a RF power detector in a range of −20 to +15 dBm. This complies to the PA output power range of GSM and PCN systems when a directional coupler with 20 dB attenuation is used. The Schottky diode for power detection (sensor) is biased by an integrated current source of 30 µA. Variations of the forward voltage of the diodes with the temperature have no influence on the measured signal, because they are cancelled by sampling around the switched capacitor operational amplifier OP1 (see Fig.1). 1999 Apr 12 After opening switch S3, the control voltage on pin VC rises in a fixed amount of time to the home position level so biasing the PA to the beginning of the active range of its control curve. Switch S2 remains closed during this typical time of 2 µs. When switch S2 is opened, switch S5 is closed allowing the transfer of any signal coming from amplifier OP1. 4 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems After this preset, the control voltage is free to increase according to the control loop if RF input is present (see Fig.3). PA protection against mismatching A second sensor amplified input is integrated into the PCF5078 for measuring the reflected wave of the directional coupler. The signal is added to the measured RF power signal (see Fig.3). When mismatching at the output of the PA occurs the power is reduced. A high Voltage Standing Wave Ratio (VSWR) at the output of the PA often occurs in systems where the PA is connected to the antenna via switches with low attenuation instead of using a duplex filter. For higher DAC ramp steps the delay time of opening switch S3 (and closing switch S4) is reduced. On the contrary, the delay time between opening switch S2 with respect to opening switch S3 (and closing switch S4) remains unchanged. For a correct start-up it is required that the rising time of the supply voltage is maximum 20 µs. Home position voltage End of a burst A forward voltage of an on-chip silicon diode is provided as the default home position voltage Vhome. This voltage matches the requirements at the control input of most PAs and exhibits the same temperature coefficient. For a proper down ramp, the final value of the DAC input voltage should be below the value at the beginning of the burst and so be able to really shut-off the PA (see Fig.5). This means the code programmed for the last bit of the DAC down ramp (CODEEND) has to be lower than the initial value of the up ramp (CODESTART). Moreover, the last code must be maintained until the supply voltage has been switched off. However, if another value is needed for a certain PA the level can be adjusted by connecting external components to pin VHOME (see Figs 10 and 11). The home position voltage can be set between 200 and 1000 mV when using a capacitor of 50 pF connected between pins VINT and VC. When the voltage on pin VC is detected to be lower than VVHOME a built-in mechanism forces the voltage on pin VC to Vprebias by closing switches S1, S2 and S3 and by opening switches S4 and S5. For proper operation, the supply voltage should be switched off at least 15 µs later with respect to the end of the down ramp on pin VDAC. 1999 Apr 12 PCF5078 5 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 handbook, full pagewidth RFout (dBc) 0 −10 −20 −30 −40 −50 −60 −70 −80 −28 −18 −10 +543 0 +553 +561 +571 time (µs) VVDAC <0.9VDD CODESTART CODEEND 0 2 4 6 8 10 12 14 16 16 18 20 22 24 26 28 30 32 DAC bits at 560 kHz 0 2 4 6 8 10 12 14 16 16 18 20 22 24 26 28 30 32 DAC bits at 560 kHz VVC <0.9VDD Vprebias VDD time RFin time >45 µs >15 µs Fig.3 Timing diagram. 1999 Apr 12 6 MGS197 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 handbook, full pagewidth VDD time <20 µs VVDAC CODESTART >25 µs >25 mV 0 <45 µs <3 µs 2 4 6... DAC bits at 560 kHz closed S1 opened time closed S3 opened time closed S4 opened time closed S2 opened time closed S5 opened time 2 µs VVC VVHOME Vprebias MGS195 Fig.4 Initialization and start of a burst diagram. 1999 Apr 12 7 time Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 handbook, full pagewidth VDD time VVDAC CODEEND < CODESTART . . . 26 28 30 32 DAC bits at 560 kHz ≥15 µs closed S1, S2, S3 opened time closed S4, S5 opened time <12 µs VVC VVHOME Vprebias time MGS196 Fig.5 End of a burst diagram. 1999 Apr 12 8 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VDD supply voltage Vn DC voltage on MIN. MAX. UNIT 2.4 6.0 V pins VS2 and VS2 −3.0 +6.0 V all other pins −0.5 +6.0 V In DC current on any signal pin −10 +10 mA Ptot total power dissipation − 315 mW Tstg storage temperature −65 +150 °C Tamb operating ambient temperature −40 +85 °C CHARACTERISTICS VDD = 2.4 to 5 V; Tamb = −40 to +85 °C; see Fig.1; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VDD supply voltage 2.4 3.6 5.0 V IDD(tot) total supply current − − 6 mA −3 − VDD V VDD = 2.4 V 17 28 39 µA VDD = 5.0 V 21 33 45 µA − 0.07 − µA/K Sensor input voltage VI(n) input voltage on pins VS1 and VS2 Bias current source Ibias TCbias detector diode bias current no input signal; Tamb = 25 °C; see Fig.7 temperature coefficient of bias current source Home position voltage Tamb = 25 °C Vhome internal home position voltage 0.550 0.600 0.650 V TChome temperature coefficient of internal home position voltage source − −2.1 − mV/K R3 resistor for internal home position voltage − 50 − kΩ VI(VHOME) home position input voltage 200 − 1000(1) mV 70 100 130 kHz Low pass filter for DAC signal (3rd-order Bessel) f3dB 1999 Apr 12 corner frequency 9 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems SYMBOL PARAMETER PCF5078 CONDITIONS MIN. TYP. MAX. UNIT Integrator (OP4) BG gain bandwidth CL = 120 pF; note 2 − 4 − MHz PSRR power supply rejection ratio at 217 Hz; VDD = 3 V; note 2 50 55 − dB SRpos positive slew rate VDD = 3 V; note 3 3.5 4.5 − V/µs SRneg negative slew rate VDD = 3 V; note 3 3.5 VO(min) minimum output voltage Tamb = 25 °C; see Fig.8 − VO(max) maximum output voltage RL = 700 Ω; see Fig.6 4.5 − V/µs − 0.2 V 0.85VDD − − V − − % Capacitors C1, C2, C3 and C4 M matching ratio accuracy between capacitances 1 Notes 1. For CVINT = 50 pF. 2. Guaranteed by design. 3. Slew rates are measured between 10% and 90% of output voltage level with an load of approximately 40 pF to ground. MGS200 6.5 MGS198 33 handbook, halfpage handbook, halfpage IL (mA) I bias (µA) 5.5 31 4.5 29 3.5 27 2.5 2 3 4 VDD (V) 2 5 3 4 VDD (V) 5 Tamb = 25 °C. Fig.6 Minimum load current as a function of the supply voltage. 1999 Apr 12 Fig.7 10 Typical bias current as a function of the supply voltage. Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 MGS199 1.0 handbook, halfpage TC (mV/K) 0.8 0.6 0.4 0.2 2 Fig.8 3 4 5 VDD (V) Temperature coefficient of the minimum output voltage as a function of the supply voltage. APPLICATION INFORMATION antenna handbook, full pagewidth sensor RF PA D1 VC D2 R2 1 kΩ R1 1 kΩ C1 VINT 1 8 2 <50 pF 7 VDD 3 6 2.2 to 10 nF C3 22 to 82 pF VHOME PCF5078 VS1 C2 VDAC 0.2 to 2.5 V VS2 4 5 VSS AUXDAC3 PCF5073x MGS201 Fig.9 Application diagram for mobile station with PA protection against mismatching. 1999 Apr 12 11 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 VDD andbook, halfpage andbook, halfpage Vhome R3 VOLTAGE GENERATION 7 VHOME VOLTAGE GENERATION 50 kΩ R(2) C(1) PCF5078 R(2) Vhome VVHOME R3 7 VHOME 50 kΩ PCF5078 MGS204 VVHOME C(1) MGS203 (1) C = 22 to 82 pF. (1) C = 22 to 82 pF. V VHOME (2) R = -------------------------------------------- × R3 V home – V VHOME V DD – V VHOME (2) R = -------------------------------------------- × R3 V VHOME – V home Fig.10 Suggested method to force externally VVHOME < Vhome. Fig.11 Suggested method to force externally VVHOME > Vhome. handbook, halfpage PCF5078 1 VC 700 Ω 120 pF MGS202 Fig.12 Typical output load on pin VC. 1999 Apr 12 12 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... IC1 1 2 RFIN 3 VC 4 VS 5 RFOUT GND P1 RFin C6 39 pF VBATT 2 D1(1) 1 13 C11 330 µF P3 R9 1.5 kΩ 1 COUPLER HY1 6 2 5 GND P2 RFout 3 P4 4 GND C7 39 pF R3 47 Ω 2 D2(1) 1 C5 39 pF VC R1 1 kΩ R7 1 kΩ C13 27 pF VINT VS1 VS2 1 8 2 7 PCF5078 3 6 4 5 C20 68 nF VHOME VDAC VBATT TR1 3 BC858 2 VDD C8 68 pF 1 R16 2.2 kΩ VOUT 6 4 C16 6.8 µF VIN TK11230 BYPASS C1 1 µF VSS Philips Semiconductors Power amplifier controller for GSM and PCN systems handbook, full pagewidth 1999 Apr 12 BGY241 IC5 3 1 5 CTL R23 100 kΩ C18 1 µF 2 GND GND MGS205 AUXDAC3 of PCF5073x TXON Product specification Fig.13 Application example of PCF5078. PCF5078 (1) D1 and D2: type BAT62_03W Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 PACKAGE OUTLINE TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm D E SOT505-1 A X c y HE v M A Z 5 8 A2 pin 1 index (A3) A1 A θ Lp L 1 4 detail X e w M bp 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(2) e HE L Lp v w y Z(1) θ mm 1.10 0.15 0.05 0.95 0.80 0.25 0.45 0.25 0.28 0.15 3.10 2.90 3.10 2.90 0.65 5.10 4.70 0.94 0.70 0.40 0.1 0.1 0.1 0.70 0.35 6° 0° Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-04-09 SOT505-1 1999 Apr 12 EUROPEAN PROJECTION 14 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems If wave soldering is used the following conditions must be observed for optimal results: SOLDERING Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; There is no soldering method that is ideal for all surface mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Wave soldering Manual soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. To overcome these problems the double-wave soldering method was specifically developed. 1999 Apr 12 PCF5078 When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 15 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems PCF5078 Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE REFLOW(1) WAVE BGA, SQFP not suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not PLCC(3), SO, SOJ suitable suitable(2) suitable suitable suitable LQFP, QFP, TQFP not recommended(3)(4) suitable SSOP, TSSOP, VSO not recommended(5) suitable Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 12 16 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems NOTES 1999 Apr 12 17 PCF5078 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems NOTES 1999 Apr 12 18 PCF5078 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems NOTES 1999 Apr 12 19 PCF5078 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 465008/00/01/pp20 Date of release: 1999 Apr 12 Document order number: 9397 750 04997