BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 196W SOT-343 RIs Q62702-F1576 1=E 2=C 3=E 4=B Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 100 Base current IB 12 Total power dissipation Ptot TS ≤ 69 °C Values Unit V mA mW 700 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 115 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 196W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 50 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-12-1996 BFP 196W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 5 pF - 1 1.4 - 0.36 - - 3.7 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 7.5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.5 - f = 1.8 GHz - 2.5 - f = 900 MHz - 17.5 - f = 1.8 GHz - 11.5 - f = 900 MHz - 12.5 - f = 1.8 GHz - 6.5 - Power gain 2) Gma IC = 50 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 50 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFP 196W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.7264 fA BF = 125 - NF = 0.80012 - VAF = 20 V IKF = 0.4294 A ISE = 119.22 fA NE = 1.1766 - BR = 10.584 - NR = 0.94288 - VAR = 3.8128 V IKR = 0.019511 A ISC = 4.8666 fA NC = 0.88299 - RB = 1.2907 Ω IRB = 0.084011 mA RBM = 1 Ω RE = 0.75103 Ω RC = 0.27137 Ω CJE = 13.325 fF VJE = 0.7308 V MJE = 0.33018 - TF = 23.994 ps XTF = 0.44322 - VTF = 0.1 V ITF = 1.9775 mA PTF = 0 deg CJC = 1667 fF VJC = 0.73057 V MJC = 0.3289 - XCJC = 0.29998 - TR = 2.2413 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.50922 - TNOM 300 K LBI = 0.43 nH LBO = 0.47 nH LEI = 0.26 nH LEO = 0.12 nH LCI = 0.06 nH LCO = 0.36 nH CBE = 68 fF CCB = 46 fF CCE = 232 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFP 196W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 800 mW Ptot 600 TS 500 400 300 TA 200 100 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-12-1996 BFP 196W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.7 7.5 pF GHz 10V 5V 6.5 Ccb 1.4 fT 3V 6.0 2V 5.5 1.2 5.0 4.5 1.0 4.0 0.8 1V 3.5 0.7V 3.0 0.6 2.5 2.0 0.4 1.5 0.2 1.0 0.0 0.5 0.0 0 4 8 12 16 V VR 22 0 20 40 60 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 80 mA IC 120 12 dB 8V dB 18 G 3V G 17 10 8V 2V 3V 16 9 2V 15 14 8 13 7 12 1V 1V 11 6 10 5 0.7V 9 0.7V 8 4 0 20 Semiconductor Group 40 60 80 mA IC 120 6 0 20 40 60 80 mA IC 120 Dec-12-1996 BFP 196W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 18 38 IC=50mA 0.9GHz dBm dB 8V 34 G IP3 14 5V 32 0.9GHz 12 30 1.8GHz 3V 28 10 26 8 24 2V 1.8GHz 6 22 20 4 18 2 1V 16 0 0 1 2 3 4 5 6 7 8 V 14 0 10 20 40 60 80 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 32 dB 120 32 IC=50mA IC=50mA dB 28 G mA IC S21 26 24 24 20 22 20 16 18 12 16 14 8 12 4 10 8V 8 6 4 0.0 8V 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 0 -4 0.0 3.5 7 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-12-1996