BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 (PNP) • CECC-type available: CECC 50002/249 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 92P SOT-23 GFs Q62702-F1050 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 Base current IB 4 Total power dissipation Ptot TS ≤ 48 °C Values Unit V mA mW 280 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 365 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFR 92P Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 15 10 nA - - 100 IEBO µA - - 100 hFE IC = 15 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2.5 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 40 2 100 200 Dec-12-1996 BFR 92P Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 3.5 pF - 0.38 0.6 - 0.2 - - 0.7 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 2 mA, VCE = 6 V, ZS = ZSopt f = 900 MHz - 1.8 - f = 1.8 GHz - 2.9 - f = 900 MHz - 15 - f = 1.8 GHz - 9.5 - f = 900 MHz - 12.5 - f = 1.8 GHz - 7 - Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFR 92P SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.1213 fA BF = 94.733 - NF = 1.0947 - VAF = 30 V IKF = 0.46227 A ISE = 129.55 fA NE = 1.9052 - BR = 10.729 - NR = 0.8983 - VAR = 14.599 V IKR = 0.01 A ISC = 0.75557 fA NC = 1.371 - RB = 14.998 Ω IRB = 0.01652 mA RBM = 7.8145 Ω RE = 0.29088 Ω RC = 0.13793 Ω CJE = 10.416 fF VJE = 0.70618 V MJE = 0.34686 - TF = 26.796 ps XTF = 0.3817 - VTF = 0.32861 V ITF = 4.4601 mA PTF = 0 deg CJC = 946.47 fF VJC = 0.84079 V MJC = 0.4085 - XCJC = 0.13464 - TR = 1.2744 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99545 - TNOM 300 K LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0 nH LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFR 92P Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 TS 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-12-1996 BFR 92P Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.9 6.0 GHz pF 5.0 Ccb fT 0.7 4.5 0.6 0.5 4.0 5V 3.5 3V 3.0 2V 0.4 2.5 0.3 2.0 1.5 0.2 1V 1.0 0.7V 0.1 0.5 0.0 0.0 0 4 8 12 16 V VR 22 0 5 10 15 20 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 18 mA IC 35 10 10V dB dB G 25 10V 14 G 5V 12 3V 10 2V 8 5V 7 3V 6 5 2V 4 8 3 6 2 1 4 0 1V 2 -1 1V -2 0 -3 -2 -4 0 0.7V 5 10 Semiconductor Group 15 20 25 mA IC -4 -5 0 35 6 5 10 15 20 25 0.7V mA 35 IC Dec-12-1996 BFR 92P Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 26 16 IC=15mA 0.9GHz dBm dB 8V 5V G IP3 0.9GHz 12 22 3V 20 10 18 1.8GHz 2V 16 8 1.8GHz 14 6 12 4 1V 10 2 8 0 6 0 2 4 6 8 V 12 0 4 8 12 16 20 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 32 mA IC 28 28 IC=15mA dB dB IC=15mA 24 G S21 24 22 20 18 20 16 14 16 12 10 12 8 6 8 10V 10V 2 4 0 0.0 4 1V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 0 -2 0.0 0.7V GHz 3.5 f 7 1V 0.5 1.0 1.5 2.0 2.5 0.7V GHz 3.5 f Dec-12-1996