BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 106 SOT-23 R7s Q62702-F1219 1=B 2=E 3=C 4=E Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 Base current IB 12 Total power dissipation Ptot TS ≤ 73 °C Values Unit V mA mW 700 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 110 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 106 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 15 100 nA - - 100 IEBO µA - - 10 hFE IC = 70 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 40 2 100 220 Dec-11-1996 BFR 106 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 3.5 pF - 0.95 1.5 - 0.25 - - 4.4 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 2.5 - f = 1.8 GHz - 4 - f = 900 MHz - 12.5 - f = 1.8 GHz - 7.5 - f = 900 MHz - 10.5 - f = 1.8 GHz - 5 - Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 70 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 106 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.8998 fA BF = 132.75 - NF = 0.89608 - VAF = 15 V IKF = 0.44125 A ISE = 71.424 fA NE = 1.3235 - BR = 11.407 - NR = 0.91008 - VAR = 4.1613 V IKR = 0.010016 A ISC = 2.0992 fA NC = 1.4602 - RB = 1.2652 Ω IRB = 0.028135 mA RBM = 1.0893 Ω RE = 1.1351 Ω RC = 0.27485 Ω CJE = 5.0933 fF VJE = 0.85909 V MJE = 0.69062 - TF = 35.78 ps XTF = 0.44444 - VTF = 0.10681 V ITF = 62.059 mA PTF = 0 deg CJC = 2327.8 fF VJC = 0.81533 V MJC = 0.46849 - XCJC = 0.14496 - TR = 1.2466 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.92887 - TNOM 300 K LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0 nH LCO = 0.43 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 106 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 800 mW Ptot TS 600 500 400 TA 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS P totmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-11-1996 BFR 106 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 3.2 6.0 GHz pF 5.0 Ccb fT 2.4 5V 3V 4.5 4.0 2V 2.0 3.5 1.6 3.0 2.5 1.2 2.0 0.8 1V 1.5 0.7V 1.0 0.4 0.5 0.0 0.0 0 4 8 12 16 V VR 22 0 20 40 60 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 14 80 mA IC 120 9.0 10V dB dB 5V G G 3V 7.0 5V 2V 6.0 3V 10 8 5.0 2V 4.0 6 3.0 4 1V 2.0 2 1.0 0.7V 0 1V 0.7V 0.0 0 20 Semiconductor Group 40 60 80 mA IC 120 6 0 20 40 60 80 mA IC 120 Dec-11-1996 BFR 106 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter 14 VCE = Parameter, f = 900MHz 36 IC=70mA 0.9GHz dB G IP3 0.9GHz 10 dBm 8V 32 5V 30 28 3V 8 26 1.8GHz 24 6 22 1.8GHz 4 2V 20 18 2 1V 16 0 0 2 4 6 8 V 14 0 12 10 20 30 40 50 60 70 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 45 40 IC=70mA IC=70mA dB G 80 mA 100 IC dB 35 S21 30 30 25 25 20 20 15 15 10 10 0.7V 0 -5 0.0 5 10V 5 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 1V 3.0 0.7V 0 GHz f -5 0.0 4.0 7 0.5 1.0 10V 1V 1.5 2.0 2.5 GHz f 3.5 Dec-11-1996