ETC H5N2503P

H5N2503P
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1374A (Z)
2nd. Edition
Jun. 2002
Features
• Low on-resistance: RDS(on) = 0.04 Ω typ.
• Low leakage current: IDSS = 1 µA max (at VDS = 250 V)
• High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)
• Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A)
• Avalanche ratings
Outline
TO-3P
D
G
1
S
2
3
1. Gate
2. Drain (Flange)
3. Source
H5N2503P
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
50
A
200
A
50
A
200
A
50
A
150
W
Note1
Drain peak current
ID (pulse)
Body-drain diode reverse drain
current
IDR
Body-drain diode reverse drain peak
current
IDR (pulse)
Avalanche current
IAP
Note1
Note3
Note2
Channel dissipation
Pch
Channel to case Thermal Impedance
θ ch-c
0.833
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Rev.1, Jun. 2002, page 2 of 10
H5N2503P
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
µA
VGS = ±30 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 250 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.0
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on)
—
0.040
0.055
Ω
ID = 25 A, VGS = 10 V
Forward transfer admittance
|yfs|
25
40
—
S
ID = 25 A, VDS = 10 V
Input capacitance
Ciss
—
5150
—
pF
VDS = 25 V
Output capacitance
Coss
—
620
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
105
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
58
—
ns
ID = 25 A
Rise time
tr
—
210
—
ns
VGS = 10 V
Turn-off delay time
td(off)
—
220
—
ns
RL = 5 Ω
Fall time
tf
—
190
—
ns
Rg = 10 Ω
Total gate charge
Qg
—
140
—
nC
VDD = 200 V
Gate to source charge
Qgs
—
25
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
60
—
nC
ID = 50 A
Body-drain diode forward voltage
VDF
—
1.0
1.5
V
IF = 50 A, VGS = 0
Bidy-drain diode reverse recovery trr
time
—
210
—
ns
IF = 50 A, VGS = 0
Body-drain diode reverse recovery Qrr
charge
—
1.8
—
µC
diF/dt = 100 A/µs
Note4
Note4
Notes: 4. Pulse test
Rev.1, Jun. 2002, page 3 of 10
H5N2503P
Main Characteristics
Power vs. Temperature Derating
ID (A)
300
150
100
100
50
PW
DC
30
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
200
er
10
100
Case Temperature
150
200
µs
s
s
m
s(
1s
(T
Operation in
ho
t)
25
°C
)
limited by RDS(on)
Ta = 25°C
1
Tc (°C)
30
3
10
100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
Pulse Test
6V
60
5.5 V
40
20
5V
V DS = 10 V
ID (A)
7V
6.5 V
Drain Current
ID (A)
Drain Current
80
10 V
8V
ion
1 this area is
Typical Output Characteristics
100
10
at
3
0.1
50
=
0µ
1m
c=
0.3
0
Op
10
10
80
Pulse Test
60
40
25°C
Tc = 75°C
20
–25°C
VGS = 4.5 V
0
4
8
12
Drain to Source Voltage
Rev.1, Jun. 2002, page 4 of 10
16
20
VDS (V)
0
2
4
6
Gate to Source Voltage
8
10
VGS (V)
H5N2503P
4
3
I D = 50 A
2
25 A
1
10 A
0
Static Drain to Source on State Resistance
RDS(on) (mΩ)
Pulse Test
160 V GS = 10 V
120
I D = 50 A
80
25 A
0
–40
100
50
VGS = 10 V, 15 V
20
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
40
Static Drain to Source on State Resistance
vs. Drain Current
200
Pulse Test
10
12
4
8
Gate to Source Voltage
10 A
0
40
80
120
Case Temperature Tc (°C)
160
1
2
5
10 20
50
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
5
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
50
20
Tc = –25°C
10
5
2
25°C
75°C
1
V DS = 10 V
Pulse Test
0.5
0.2
0.2
0.5 1
5
10 20
Drain Current
2
ID (A)
50 100
Rev.1, Jun. 2002, page 5 of 10
H5N2503P
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
20000
Capacitance C (pF)
50000
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
VGS = 0
f = 1 MHz
10000
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
Ciss
5000
2000
1000
Coss
500
200
Crss
100
50
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
400
300
200
100
0
VGS
V DD = 50 V
100 V
200 V
VDS
16
12
8
V DD = 200 V
100 V
50 V
40
80
120
160
Gate Charge Qg (nC)
Rev.1, Jun. 2002, page 6 of 10
4
0
200
10000
Switching Time t (ns)
I D = 50 A
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
VGS (V)
Dynamic Input Characteristics
500
20
40
60
Drain to Source Voltage
80
100
VDS (V)
Switching Characteristics
V GS = 10 V, V DD = 125 V
PW = 10 µs, duty < 1 %
R G =10
1000
tr
t d(off)
tf
100
t d(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N2503P
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
V GS(off) (V)
Reverse Drain Current
IDR (A)
100
80
V GS = 0 V
60
40
10 V
20
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V DS = 10 V
4
I D = 10mA
3
1mA
0.1mA
2
1
0
-50
VSD (V)
0
50
100
150
Case Temperature Tc (°C)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
200
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 125 V
Vout
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.1, Jun. 2002, page 7 of 10
H5N2503P
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
1
0.0
0.01
10 µ
e
p
ot
T
h
100 µ
Rev.1, Jun. 2002, page 8 of 10
PW
T
PW
uls
1s
D=
1m
10 m
100 m
Pulse Width PW (s)
1
10
H5N2503P
Package Dimensions
15.6 ± 0.3
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of January, 2002
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
JEITA
Mass (reference value)
TO-3P
—
Conforms
5.0 g
Rev.1, Jun. 2002, page 9 of 10
H5N2503P
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contact Hitachi’s sales office before using the product in an application that demands especially high
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traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.1, Jun. 2002, page 10 of 10