HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching ADE-208-706B (Z) 3rd. Edition May 2002 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline DPAK-2 2, 4 D 4 4 1 Gate resistor G Tempe rature Sencing Circuit Latch Circuit 1 2 Gate Shut down Circuit 1 2 S 3 3 3 1. Gate 2. Drain 3. Source 4. Drain HAF2007(L), HAF2007(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 16 V Gate to source voltage VGSS –2.5 V Drain current ID 5 A 10 A 5 A 20 W Drain peak current ID(pulse) Body-drain diode reverse drain current IDR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Typical Operation Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Input voltage VIH 3.5 — — V VIL — — 1.2 V Input current IIH1 — — 100 µA Vi = 8V, VDS = 0 (Gate non shut down) IIH2 — — 50 µA Vi = 3.5V, VDS = 0 IIL — — 1 µA Vi = 1.2V, VDS = 0 Input current IIH(sd)1 — 0.8 — mA Vi = 8V, VDS = 0 (Gate shut down) IIH(sd)2 — 0.35 — mA Vi = 3.5V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage Vop 3.5 — 12 V Rev.2, May. 2002, page 2 of 11 Test Conditions HAF2007(L), HAF2007(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current ID1 4 — — A VGS = 3.5V, VDS = 2V Drain current ID2 — — 10 mA VGS = 1.2V, VDS = 2V Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 16 — — V IG = 300µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS –2.5 — — V IG = –100µA, VDS = 0 Gate to source leak current IGSS1 — — 100 µA VGS = 8V, VDS = 0 IGSS2 — — 50 µA VGS = 3.5V, VDS = 0 IGSS3 — — 1 µA VGS = 1.2V, VDS = 0 IGSS4 — — –100 µA VGS = –2.4V, VDS = 0 IGS(op)1 — 0.8 — mA VGS = 8V, VDS = 0 IGS(op)2 — 0.35 — mA VGS = 3.5V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1mA, VDS = 10V Forward transfer admittance |yfs| 4 7.5 — S ID = 2.5A, VDS = 10V Static drain to source on state resistance RDS(on) — 73 120 mΩ ID = 2.5A, VGS = 4V Static drain to source on state resistance RDS(on) — 55 75 mΩ ID = 2.5A, VGS = 10V Output capacitance Coss — 270 — pF VDS = 10V , VGS = 0 f = 1 MHz Turn-on delay time td(on) — 2.8 — µs ID = 2.5A, VGS = 5V Rise time tr — 12.4 — µs RL = 12Ω Turn-off delay time td(off) — 15 — µs Fall time tf — 11 — µs Body–drain diode forward voltage VDF — 0.9 — V IF = 5A, VGS = 0 Body–drain diode reverse recovery trr time — 140 — ns IF = 5A, VGS = 0 diF/ dt =50A/µs Over load shut down tos1 — 1.1 — ms VGS = 5V, VDD = 16V tos2 — 0.57 — ms VGS = 5V, VDD = 24V Input current (shut down) operation time Note4 Note3 Note3 Note3 Notes: 3. Pulse test 4. Including the junction temperature rise of the over loaded condition Rev.2, May. 2002, page 3 of 11 HAF2007(L), HAF2007(S) Main Characteristics Power vs. Temperature Derating 500 30 20 10 100 50 Thermal shut down Operation area 20 10 0 10 5 2 1 Operation in this area is limited by RDS(on) 1 0 50 100 Case Temperature 25 150 200 0.5 Ta = 25°C 0.3 0.5 1 2 Tc (°C) 10 20 50 100 V DS = 10 V Pulse Test 4 4V VGS = 3.5 V 5 0 5 5 5V 15 10 m s PW DC = 1 0 (T O c = pe ms 25 ratio °C ) n Typical Transfer Characteristics Typical Output Characteristics 10 V 8V Pulse Test Drain Current I D (A) 20 µs Drain to Source Voltage VDS (V) 6V Drain Current I D (A) Maximum Safe Operation Area 200 Drain Current I D (A) Channel Dissipation Pch (W) 40 2 4 6 8 Drain to Source Voltage VDS (V) Rev.2, May. 2002, page 4 of 11 10 Tc = -25°C 3 25°C 75°C 2 1 0 1 2 3 4 5 Gate to Source Voltage VGS (V) 0.25 Pulse Test 0.2 0.15 I D= 2 A 0.1 1A 0.05 0 0.5 A 2 4 6 R DS(on) (mΩ) Drain to Source On State Resistance Gate to Source Voltage 8 ID=2A 0.08 0.04 0 -40 0.5 A, 1 A 200 100 1A 0.5 A ID=2A V GS = 10 V 0 40 80 120 Case Temperature Tc (°C) 160 V GS = 4 V 50 V GS = 10 V 20 Pulse Test 10 0.1 0.2 0.5 1 2 5 Drain Current I D (A) 10 0.16 V GS = 4 V 500 VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.12 Static Drain to Source Sate Resistance vs. Drain Current 100 Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage V DS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) (mΩ) HAF2007(L), HAF2007(S) 50 10 20 Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test 20 Tc = -25°C 10 5 75°C 25°C 2 1 0.5 1 2 5 10 20 Drain Current I D (A) 50 Rev.2, May. 2002, page 5 of 11 HAF2007(L), HAF2007(S) Body to Drain Diode Reverse recovery Time di / dt = 50 A / µs V GS = 0, Ta = 25°C V GS = 5 V, V DD = 30 V PW = 300 µs, duty < 1 % 50 Switching Time t (µs) Reverse Recovery Time trr (ns) 500 Switching Characteristics 100 1000 200 100 50 20 10 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) t d(off) 20 10 t d(on) 2 1 2 5 10 20 ID (A) Drain Current 50 Typical capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Souece to Drain Voltage 10000 5 Pulse Test Capacitance C (pF) Reverse Drain Current I DR (A) tf 5 1 0.5 50 tr 4 3 VGS = 5 V 0V 2 1000 Coss 100 1 0 VGS = 0 f = 1 MHz 10 0.4 0.8 1.2 Source to Drain Voltage Rev.2, May. 2002, page 6 of 11 1.6 V SD (V) 2.0 0 10 20 30 40 Drain to Source Voltage V DS (V) 50 HAF2007(L), HAF2007(S) Gate to Source Voltage vs. Shutdown Time of Load-Short Test Shutdown Case Temperature vs. Gate to Source Voltage 12 V DD= 16 V 6 24V 4 2 0 10µ 100µ 1m 10m 100m Shutdown Time of Load-Short Test Pw (S) 180 160 140 120 I D = 0.5 A 100 0 2 4 6 8 Gate to Source Voltage 10 V GS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γs (t) Gate to Source Voltage 8 Shutdown Case Temperature Tc (°C) 10 V GS (V) 200 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.01 10µ 0.2 θch - c(t) = γ s (t) • θ ch - c θch - c =6.25°C/W, Tc = 25°C 0.1 0.05 0.02 lse 1 pu 0.0 t ho 1s 100µ PDM D= PW T PW T 1m 10 m 100 m 1 10 Pulse Width PW (S) Rev.2, May. 2002, page 7 of 11 HAF2007(L), HAF2007(S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 5V 50 Ω V DD = 30 V Vout 10% 10% 90% td(on) Rev.2, May. 2002, page 8 of 11 tr 10% 90% td(off) tf HAF2007(L), HAF2007(S) Package Dimensions As of January, 2002 1.7 ± 0.5 Unit: mm 2.3 ± 0.2 0.55 ± 0.1 4.7 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 (0.7) 3.1 ± 0.5 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 0.55 ± 0.1 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 Hitachi Code JEDEC JEITA Mass (reference value) DPAK (L)-(2) — — 0.42 g Rev.2, May. 2002, page 9 of 11 HAF2007(L), HAF2007(S) As of January, 2002 2.3 ± 0.2 0.55 ± 0.1 (4.9) (5.3) 6.5 ± 0.5 5.4 ± 0.5 1.2 Max 5.5 ± 0.5 1.7 ± 0.5 Unit: mm 0 – 0.25 2.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 2.29 ± 0.5 Hitachi Code JEDEC JEITA Mass (reference value) Rev.2, May. 2002, page 10 of 11 DPAK (S)-(1),(2) — Conforms 0.28 g HAF2007(L), HAF2007(S) Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.2, May. 2002, page 11 of 11