HITACHI 6AM13

6AM13
Silicon N-Channel/P-Channel Complementary Power MOS FET
Array
ADE-208-1217 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
• Low on-resistance
N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A
P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A
• Capable of 4 V gate drive
• Low drive current
• High speed switching
• High density mounting
• Suitable for H-bridged motor driver
6AM13
Outline
SP-12TA
5
S
12
S
Pch
6
G
11
G
D3
8
G
D7
9
G
4G
Nch
12
D 10
3
4
5
6
7
2G
8
9
N-ch Source
1.
2, 8, 9 N-ch Gate
3, 7, 10. N-ch Drain
P-ch Drain
4, 6, 11. P-ch Gate
5, 12. P-ch Source
10
1112
S
1
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
Nch
Pch
Unit
Drain to source voltage
VDSS
60
–60
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
10
–10
A
40
–40
A
10
–10
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
Channel dissipation
1
Pch (Tc = 25°C)*
2
2
42
W
Channel dissipation
Pch*
4.8
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 6 devices operation
2
6AM13
Electrical Characteristics (Ta = 25°C) (1 Unit)
N channel
P channel
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
V(BR)DSS
60
—
—
–60
—
—
V
I D = 10 mA, VGS = 0
Gate to source
breakdown voltage
V(BR)GSS
±20
—
—
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak
current
I GSS
—
—
±10
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain I DSS
current
—
—
250
—
—
–250 µA
VDS = 50 V, VGS = 0
Gate to source cutoff
voltage
VGS(off)
1.0
—
2.0
–1.0
—
–2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source
RDS(on)
—
0.06
0.075 —
0.09
0.12
Ω
I D = 5 A, VGS = 10 V*1
—
0.08
0.11
—
0.12
0.18
Ω
I D = 5 A, VGS = 4 V*1
—
S
I D = 5 A, VDS = 10 V*1
on state resistance
Forward transfer
admittance
|yfs|
6
9.5
—
5
8
Input capacitance
Ciss
—
860
—
—
1400 —
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
450
—
—
720
—
pF
f = 1 MHz
Reverse transfer
capacitance
Crss
—
140
—
—
220
—
pF
Turn-on delay time
t d(on)
—
10
—
—
15
—
ns
I D = 5 A, VGS = 10 V,
Rise time
tr
—
50
—
—
100
—
ns
RL = 6 Ω
Turn-off delay time
t d(off)
—
180
—
—
250
—
ns
Fall time
tf
—
110
—
—
160
—
ns
Body to drain diode
forward voltage
VDF
—
1.0
—
—
–1.0
—
V
I F = 10 A, VGS = 0
Body to drain diode
reverse recovery time
t rr
—
120
—
—
200
—
ns
I F = 10 A, VGS = 0,
diF/dt = 50 A/µs
Note:
1. Pulse Test
Polarity of test conditions for P channel device is reversed.
3
6AM13
Maximum Channel Dissipation Curve
Maximum Channel Dissipation Curve
60
6
Condition : Channel dissipation of
each die is identical
Condition : Channel dissipation of
each die is identical
Channel Dissipation Pch (W)
Channel Dissipation Pch (W)
6 Device Operation
5
4 Device Operation
4
2 Device Operation
1 Device Operation
3
2
6 Device Operation
4 Device Operation
40
2 Device Operation
1 Device Operation
20
1
0
25
50
75
100
125
0
150
25
Ambient Temperature Ta (°C)
50
75
100
125
150
Case Temperature Tc (°C)
Maximum Safe Operation Area
(P-Channel)
– 50
– 30
10
10
0
s
–40
m
s
(1
C
O
sh
pe
ot
ra
)
tio
n
–1
– 0.3
Drain Current ID (A)
10
Drain Current I D (A)
µs
m
=
D
–3
(T
c
Operation in this area
is limited by RDS (on)
=
–50
25
°C
)
–1
–3
– 10
– 30
Drain to Source Voltage VDS (V)
4
Pulse Test
– 100
–8 V
–30
–20
–10
Ta = 25°C
– 0.3
–6 V
–5 V
– 0.1
– 0.05
– 0.1
–10 V
1
PW
– 10
Typical Output Characteristics
µs
0
–4 V
VGS = –3 V
–8
–20
–4
–12
–16
Drain to Source Voltage VDS (V)
–20
Drain Current ID (A)
–16
TC = 25°C
VDS = –10 V
Pulse Test
–12
–25°C
75°C
–8
–4
Static Drain to Source on State Resistance
RDS (on) (Ω)
0
–2
–5
–1
–3
–4
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
Pulse Test
VGS = –4 V
–10 V
0.1
0.05
0.02
0.01
0.005
–1
–2
–5 –10 –20
–50 –100
Drain Current ID (A)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–2.0
Pulse Test
–1.6
–15 A
–1.2
–10 A
–0.8
–5 A
–0.4
Static Drain to Source on State Resistance
RDS (on) (Ω)
Typical Transfer Characteristics
Drain to Source Saturation Voltage VDS (on) (V)
6AM13
ID = –2 A
0
–2
–6
–8
–4
–10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.25
0.20
0.15
–10 A
Pulse Test
–2, –5 A
VGS = –4 V
–15 A
0.10
VGS = –10 V –2, –5, –10 A
0.05
0
–40
0
80
120
40
Case Temperature TC (°C)
160
5
6AM13
Body to Drain Diode Reverse
Recovery Time
500
50
20
–25°C
TC = 25°C
10
5
75°C
2
1.0
0.5
–0.2
–5 –10
–0.5 –1.0 –2
Drain Current ID (A)
200
100
50
20
10
5
–0.2
–20
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Ciss
1,000
Coss
Crss
100
–20
–50
–10
–30
–40
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
0
VGS = 0
f = 1 MHz
6
–5
–0.5 –1.0 –2
–10
Reverse Drain Current IDR (A)
–20
Dynamic Input Characteristics
10,000
10
0
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
0
VDD = –50 V
–25 V
–10 V
–20
–4
VDD = –50 V
–40
VDS
–25 V
–8
–10 V
–60
–12
ID = –15 A
–80
VGS
–100
0
20
60
80
40
Gate Charge Qg (nc)
–16
–20
100
Gate to Source Voltage VGS (V)
VDS = 10 V
Pulse Test
Reverse Recovery Time trr (ns)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
6AM13
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
500
–20
Switching Time t (ns)
200
tf
100
tr
50
20
.
VGS = –10 V, VDD =. –30V
PW = 2 µs, duty < 1%
td (on)
10
5
–0.2
–0.5 –1.0 –2
–5 –10
Drain Current ID (A)
–20
Reverse Drain Current IDR (A)
td (off)
–16
Pulse Test
–12
–8
–4
–10 V
–5 V
VGS = 0,5 V
0
–0.8
–2.0
–0.4
–1.2
–1.6
Source to Drain Voltage VSD (V)
7
6AM13
Maximum Safe Operation Area
(N-Channel)
50
30
10
10
0
1
PW
Drain Current ID (A)
s
m
(1
)
ot
sh
C
O
pe
ra
tio
1
n
(T
c
Operation in this area
is limited by RDS (on)
0.3
=
25
°C
)
0.05
0.1
0.3
1
3
10
30
100
3.0 V
VGS = 2.5 V
6
2
4
8
10
Drain to Source Voltage VDS (V)
0
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Typical Transfer Characteristics
2.0
Drain Current ID (A)
Drain to Source Saturation Voltage
VDS (on) (V)
20
VDS = 10 V
Pulse Test
12
8
4
75°C
0
8
–25°C
TC= 25°C
3
1
2
4
Gate to Source Voltage VGS (V)
3.5 V
8
Drain to Source Voltage VDS (V)
16
Pulse Test
12
4
Ta = 25°C
0.1
4V
5V
16
10
Drain Current I D (A)
=
D
3
10 V
µs
s
m
10
Typical Output Characteristics
20
µs
5
Pulse Test
1.6
1.2
20 A
0.8
10 A
0.4
0
ID = 5 A
6
2
4
8
10
Gate to Source Voltage VGS (V)
6AM13
Static Drain to Source on State
Resistance vs. Temperature
0.5
0.2
VGS = 4 V
Pulse Test
0.1
10 V
0.05
0.02
0.01
0.005
1
2
5
20
50
10
Drain Current ID (A)
100
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
0.20
0.16
ID = 10 A
0.08
0.04
0
–40
VGS = 10 V
5A
10 A
20 A
0
40
120
80
Case Temperature TC (°C)
160
1000
VDS = 10 V
Pulse Test
Reverse Recovery Time trr (ns)
Forward Transfer Admittance yfs (S)
VGS = 4 V
Body to Drain Diode Reverse
Recovery Time
50
–25°C
TC = 25°C
10
75°C
5
2
1.0
0.5
0.2
5A
0.12
Forward Transfer Admittance
vs. Drain Current
20
Pulse Test
0.5
1.0
10
5
2
Drain Current ID (A)
20
500
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
200
100
50
20
10
0.5
2
1.0
5
10
20
Reverse Drain Current IDR (A)
50
9
6AM13
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics
100
Capacitance C (pF)
3000
Drain to Source Voltage VDS (V)
VGS = 0
f = 1MHz
Ciss
1000
Coss
300
Crss
100
30
20
80
16
VDD = 50 V
25 V
60
12
10 V
VDS
40
VGS
20
VDD = 50 V
ID = 15 A
25 V
10 V
10
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
0
8
0
40
20
td (off)
200
tf
100
50
tr
VGS = 10 V VDD = 30 V
PW = 2µs, duty < 1 %
•
20
•
td (on)
10
0.5
10
1.0
5
2
Drain Current ID (A)
20
Reverse Drain Current IDR (A)
Switching Time t (ns)
500
10
4
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
5
0.2
16
24
32
Gate Charge Qg (nc)
8
16
12
8
4
0
Pulse Test
10 V
15 V
5V
VGS = 0, – 5 V
0.4
0.8
1.2
2.0
1.6
Source to Drain Voltage VSD (V)
Gate to Source Voltage VGS (V)
10000
6AM13
Package Dimensions
As of January, 2001
Unit: mm
31.3 +0.2
–0.3
24.4 ± 0.1
16.4 ± 0.3
5.0 ± 0.2
2.0 ± 0.1
3.2
3.0
3.8
2.54
0.85 ± 0.1
1.4
1
2
3
4
5
6
7
8
9
10 11 12
16.0 ± 0.3
2.2 ± 0.2
10.5 ± 0.5
2.7
10.0 ± 0.3
φ 3.2
0.55
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
+0.1
–0.06
SP-12TA
—
—
6.1 g
11
6AM13
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
12