HITACHI HAF1001

HAF1001
Silicon P Channel MOS FET Series
Power Switching / Over Temperature Shut–down Capability
ADE-208-583 A (Z)
2nd Edition
October 1997
Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
• Logic level operation (–4 to –6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
TO–220AB
4
D
Gate resistor
G
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
1
2
S
3
1. Gate
2. Drain
3. Source
4. Drain
HAF1001
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS+
–16
V
Gate to source voltage
VGSS–
3
V
Drain current
ID
–15
A
–30
A
–15
A
50
W
Drain peak current
I D(pulse)
Note1
Body-drain diode reverse drain current I DR
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Input voltage
VIH
–3.5
—
—
V
VIL
—
—
–1.2
V
Input current
I IH1
—
—
–100
µA
Vi = –8V, VDS = 0
(Gate non shut down)
I IH2
—
—
–50
µA
Vi = –3.5V, VDS = 0
I IL
—
—
–1
µA
Vi = –1.2V, VDS = 0
Input current
I IH(sd)1
—
–0.8
—
mA
Vi = –8V, VDS = 0
(Gate shut down)
I IH(sd)2
—
–0.35
—
mA
Vi = –3.5V, VDS = 0
Shut down temperature
Tsd
—
175
—
°C
Channel temperature
Gate operation voltage
VOP
–3.5
—
–13
V
2
Test Conditions
HAF1001
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain current
I D1
–7
—
—
A
VGS = –3.5V, VDS = –2V
Drain current
I D2
—
—
–10
mA
VGS = –1.2V, VDS = –2V
Drain to source breakdown
voltage
V(BR)DSS
–60
—
—
V
I D = –10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS+
–16
—
—
V
I G = –100µA, VDS = 0
Gate to source breakdown
voltage
V(BR)GSS–
3
—
—
V
I G = 100µA, VDS = 0
Gate to source leak current
I GSS+1
—
—
–100
µA
VGS = –8V, VDS = 0
I GSS+2
—
—
–50
µA
VGS = –3.5V, VDS = 0
I GSS+3
—
—
–1
µA
VGS = –1.2V, VDS = 0
I GSS–
—
—
100
µA
VGS = 2.4V, VDS = 0
I GS(op)1
—
–0.8
—
mA
VGS = –8V, VDS = 0
I GS(op)1
—
–0.35
—
mA
VGS = –3.5V, VDS = 0
Zero gate voltege drain current I DSS
—
—
–250
µA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage VGS(off)
–1.1
—
–2.25
V
I D = –1mA, VDS = –10V
Static drain to source on state RDS(on)
resistance
—
100
130
mΩ
I D = –7.5A, VGS = –4V Note3
Static drain to source on state RDS(on)
resistance
—
70
90
mΩ
Forward transfer admittance
|yfs|
5
10
—
S
I D = –7.5A, VDS = –10V Note3
Output capacitance
Coss
—
610
—
pF
VDS = –10V , VGS = 0
Input current (shut down)
I D = –7.5A
VGS = –10V Note3
f = 1 MHz
Turn-on delay time
t d(on)
—
7.5
—
µs
I D = –7.5A, VGS = –5V
Rise time
tr
—
36
—
µs
RL = 4Ω
Turn-off delay time
t d(off)
—
32
—
µs
Fall time
tf
—
29
—
µs
Body–drain diode forward
VDF
—
–1.0
—
V
I F = –15A, VGS = 0
t rr
—
200
—
ns
I F = –15A, VGS = 0
voltage
Body–drain diode reverse
recovery time
diF/ dt =50A/µs
Over load shut down
operation time
Note:
Note4
t os1
—
3.7
—
ms
VGS = –5V, VDD = –12V
t os2
—
1
—
ms
VGS = –5V, VDD = –24V
3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
3
HAF1001
Main Characteristics
Power vs. Temperature Derating
–500
I D (A)
–200
60
–100
Drain Current
Channel Dissipation
Pch (W)
80
40
20
50
100
150
Case Temperature
µs
Op
°C
)
Ta = 25 °C
–0.5 –1
–2
–5 –10 –20
Drain to Source Voltage
–50 –100
V DS (V)
Typical Transfer Characteristics
–30
–5 V
–20
–4 V
–10
VGS = –3 V
–3.5 V
(A)
–6 V
–16
ID
–8 V
–12
Drain Current
I D (A)
Drain Current
DC
–20
–10 V
Tc = –25 °C
–2
–4
–6
Drain to Source Voltage
–8
10
V DS (V)
25 °C
75 °C
–8
–4
V DS = –10 V
Pulse Test
Pulse Test
4
0
1
m
PW
s
=
e
–5
ra
10
tio
n ms
(T
–2 Operation in this area
c=
is limited by RDS(on)
25
–1
Typical Output Characteristics
0
10
–10
Tc (°C)
–50
–40
20 µs
–20
–0.3
200
Thermal shut down
Operation area
–50
–0.5
0
Maximum Safe Operation Area
0
–1
–2
–3
Gate to Source Voltage
–4
–5
V GS (V)
HAF1001
–2.0
Pulse Test
–1.6
–1.2
I D = –10 A
–0.8
–5 A
–0.4
Static Drain to Source State Resistance
vs. Drain Current
Drain to Source On State Resistance
R DS(on) ( Ω )
Drain to Source Saturation Voltage
V DS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.2
0.1
V GS = –4 V
–10 V
0.05
0.02
–2 A
0.01
–2
–4
–6
Gate to Source Voltage
–8
–10
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.20
I D = –10 A
0.16
0.12
–5 A
–2 A
V GS = –4 V
–10 A
0.08
0.04
–2, –5 A
–10 V
Pulse Test
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
–0.1 –0.2 –0.5 –1
–2
Drain Current
–5 –10 –20
–50
I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
R DS(on) ( Ω)
0
50
V DS = –10 V
Pulse Test
20
10
Tc = –25 °C
5
25 °C
75 °C
2
1
0.5
–0.1 –0.2 –0.5 –1
–2
–5 –10 –20
–50
Drain Current I D (A)
5
HAF1001
Body–Drain Diode Reverse
Recovery Time
t d(off)
50
Switching Time t (µs)
Reverse Recovery Time trr (ns)
Switching Characteristics
100
500
200
100
50
20
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
tf
20
tr
t d(on)
10
5
2
1
10
V GS = –5 V, V DD = –30 V
PW = 300 µs, duty < 1 %
0.5
–0.1 –0.2 –0.5 –1
–2
–5 –10 –20
Reverse Drain Current
–50
–0.1 –0.2 –0.5 –1
I DR (A)
Reverse Drain Current vs.
Souece to Drain Voltage
–50
I D (A)
10000
Pulse Test
Capacitance Coss (pF)
Reverse Drain Current I DR (A)
–5 –10 –20
Typical Capacitance vs.
Drain to Source Voltage
–20
–16
–12
VGS = –5 V
0V
–8
–4
0
1000
VGS = 0
f = 1 MHz
100
–0.4
–0.8
–1.2
Source to Drain Voltage
6
–2
Drain Current
–1.6
–2.0
V SD (V)
0
–10
–20
–30
–40
–50
Drain to Source Voltage V DS (V)
HAF1001
Gate to Source Voltage
–10
V DD= –36 V
–8
–24 V
–12 V
–9 V
–6
–4
–2
0
0.001
0.01
0.1
0.0001
1
Shutdown Time of Load–Short Test
Pw (S)
200
180
160
140
120
100
0
I D = –5 A
–2
–4
–6
Gate to Source Voltage
–8
–10
V GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ s (t)
V GS (V)
–12
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage vs.
Shutdown Time of Load–Short Test
1
0.3
0.1
0.03
Tc = 25°C
D=1
0.5
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 2.50 °C/W, Tc = 25 °C
0.05
2
0.0
1
0.0
ot
PDM
lse
pu
PW
T
PW
h
1s
0.01
10 µ
D=
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
7
HAF1001
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Waveform
Vin
10%
D.U.T.
RL
90%
Vin
–5 V
50Ω
V DD
= –30 V
Vout
td(on)
8
90%
90%
10%
10%
tr
td(off)
tf
HAF1001
Package Dimensions
0.1
f 3.6 +– 0.08
4.8 max
1.5 max
18.5 ±0.5
15.3 max
11.5 max
9.8 max
7.6 min
6.3 min
3.0max
1.27
Unit: mm
0.76 ±0.1
2.5 ±0.5
5.1 ±0.5
12.7 min
7.8 ±0.5
1.5 max
0.5
2.7 max
Hitachi Code TO–220AB
SC–46
EIAJ
—
JEDEC
9
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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