TOSHIBA SSM6L13TU_10

SSM6L13TU
TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type
SSM6L13TU
Power Management Switch Applications
High-Speed Switching Applications
Drain-source voltage
Rating
Unit
VDS
20
V
V
VGSS
±12
DC
ID
0.8
Pulse
IDP
1.6
Gate-source voltage
Drain current
Symbol
3
4
1.Source1
2.Gate1
UF6 3.Drain2
Symbol
Rating
Unit
Drain-source voltage
VDS
−20
V
Gate-source voltage
VGSS
±8
V
DC
ID
−0.8
Pulse
IDP
−1.6
Drain current
5
A
Q2 Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
2
+0.06
0.16-0.05
Characteristic
6
0.7±0.05
Q1 Absolute Maximum Ratings (Ta = 25 °C)
1
+0.1
0.3-0.05
1.7±0.1
RDS(ON) = 235 mΩ (max) (@VGS = 1.8 V)
RDS(ON) = 178 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 460 mΩ (max) (@VGS = −1.8 V)
RDS(ON) = 306 mΩ (max) (@VGS = −2.5 V)
0.65 0.65
: Pch
2.1±0.1
1.3±0.1
1.8-V drive
N–ch , P–ch 2–in–1
Low ON–resistance: Nch
2.0±0.1
•
•
•
•
•
•
Unit: mm
A
4.Source2
5.Gate2
6.Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7 mg (typ.)
Absolute Maximum Ratings (Q1 , Q2 Common)
(Ta = 25 °C)
Characteristic
Power dissipation
Symbol
Rating
Unit
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation)
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit (top view)
5
4
6
2
4
Q1
KV
1
5
Q2
3
1
2
1
3
2010-07-10
SSM6L13TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Conditions
Min
Typ.
Max
V (BR) DSS
ID = 1 mA, VGS = 0
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = − 12 V
10
⎯
⎯
Unit
V
Drain cutoff current
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ± 12 V, VDS = 0
⎯
⎯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.4
⎯
1.0
V
⏐Yfs⏐
VDS = 3 V, ID = 0.6 A
(Note 2)
2.3
3.75
⎯
S
ID = 0.6 A, VGS = 4.0 V
(Note 2)
⎯
116
143
ID = 0.4 A, VGS = 2.5 V
(Note 2)
⎯
134
178
ID = 0.2 A, VGS = 1.8 V
(Note 2)
⎯
160
235
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
RDS (ON)
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
268
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
44
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
34
⎯
pF
Switching time
Turn-on time
ton
VDD = 10 V, ID = 0.25 A,
⎯
9
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
16
⎯
⎯
− 0.8
− 1.15
V
Min
Typ.
Max
Unit
Drain-source forward voltage
VDSF
ID = − 0.8 A, VGS = 0 V
(Note 2)
ns
Note 2 : Pulse test
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Symbol
Test Conditions
V (BR) DSS
ID = − 1 mA, VGS = 0
− 20
⎯
⎯
V (BR) DSX
ID = − 1 mA, VGS = + 8 V
− 12
⎯
⎯
V
Drain cutoff current
IDSS
VDS = − 20 V, VGS = 0
⎯
⎯
− 10
μA
Gate leakage current
IGSS
VGS = ± 8 V, VDS = 0
⎯
⎯
±1
μA
− 0.3
⎯
− 1.0
V
S
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Vth
VDS = − 3 V, ID = − 1 mA
⏐Yfs⏐
VDS = − 3 V, ID = − 0.6 A
(Note 2)
1.5
2.5
⎯
ID = − 0.6 A, VGS = − 4.0 V
(Note 2)
⎯
175
234
ID = − 0.4 A, VGS = − 2.5 V
(Note 2)
⎯
230
306
ID = − 0.1 A, VGS = − 1.8 V
(Note 2)
⎯
300
460
RDS (ON)
mΩ
Input capacitance
Ciss
VDS = − 10 V, VGS = 0, f = 1 MHz
⎯
250
⎯
pF
Output capacitance
Coss
VDS = − 10 V, VGS = 0, f = 1 MHz
⎯
45
⎯
pF
Reverse transfer capacitance
Crss
VDS = − 10 V, VGS = 0, f = 1 MHz
⎯
35
⎯
pF
Switching time
Turn-on time
ton
VDD = − 10 V, ID = − 0.25 A,
⎯
12
⎯
Turn-off time
toff
VGS = 0 to − 2.5 V, RG = 4.7 Ω
⎯
18
⎯
⎯
0.85
1.2
Drain-source forward voltage
VDSF
ID = 0.8 A, VGS = 0 V
(Note 2)
ns
V
Note 2: Pulse test
2
2010-07-10
SSM6L13TU
Q1 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
OUT
2.5 V
90 %
IN
10 %
0V
RG
0
10 μs
VDD
VDD
(c) VOUT
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25 °C
90 %
10 %
VDS (ON)
tf
tr
ton
toff
Q2 Switching Time Test Circuit
(a) Test Circuit
0
OUT
(b) VIN
0V
90 %
IN
RG
− 2.5 V
10 μs
VDD
10 %
−2.5 V
RL
(c) VOUT
VDD = - 10 V
RG = 4.7 Ω
Duty ≤ 1 %
VIN: tr, tf < 5 ns
Common Source
Ta = 25 °C
VDS (ON)
90 %
10 %
VDD
tr
ton
tf
toff
Q1 Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on). )
Take this into consideration when using the device.
Q2 Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID= − 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on). )
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration.
3
2010-07-10
SSM6L13TU
Q1 Data
ID - VDS
2
10 4
2.5
1.8
1
Drain current ID (A)
ドレイン電流 ID (A)
Drain current I
(A)
ドレイン電流 IDD (A)
ID - VGS
10
1.5
1
VGS=1.2V
Ta=85°C
0.1
25°C
0.01
-25°C
0.001
Common Source
Ta = 25ソース接地
°C
ソース接地
VDS=3V
Ta=25℃
Pulse test
Pulse test
0
0.0001
0
0.2
0.4
0.6
0.8
1
0
Drain–source
voltage VDS
ドレイン・ソース間電圧
VDS (V)
(V)
RDS(ON) - VGS
Drain–source ON-resistance
Pulse test
0.6A
0.4A
ID=0.2A
100
RDS(ON) - Ta
Pulse test
250
200
1.8V,0.2A
2.5V,0.4A
150
100
0
VGS=4V,ID=0.6A
50
0
0
1
2
3
4
5
6
7
8
9
-60 -40 -20 0
10
RDS(ON) - ID
ゲートしきい値電圧　Vth(V)
Gate threshold voltage
200
1.8V
2.5V
VGS=4V
100
Common Source
Ta =ソース
25 °C 接地
Pulse
test
Ta=25℃
0
0
Vth - Ta
1
Vth (V)
300
1
20 40 60 80 100 120 140 160
Ambient
temperature Ta (°C)
周囲温度　Ta(℃)
Gate–source voltage VVGS
(V)
ゲート・ソース間電圧
GS (V)
Drain–source ON-resistance
2
Common
Source
ソース接地
RDS (ON) (mΩ)
ドレイン・ソース間オン抵抗
RDS(ON)　(mΩ)
ドレイン・ソース間オン抵抗
Drain–source
ON-resistance
RDS (ON)
(mΩ)
RDS(ON)
(mΩ)
ソース接地
Common
Source
Ta=25°C
Ta = 25
°C
200
1
Gate–source
voltage VGS VGS
(V) (V)
ゲート・ソース間電圧
300
300
ドレイン・ソース間オン抵抗
RDS (ON) (mΩ)
RDS(ON) (mΩ)
Common Source
VDS = 3 V
Common
Source
ソース接地
VDS
=3V
ID=1mA
ID = 1 mA
VDS=3V
0.8
0.6
0.4
0.2
0
-60 -40 -20 0
2
Drain current I
(A)
ドレイン電流 DID (A)
20 40 60 80 100 120 140 160
Ambient temperature
Ta
周囲温度　Ta(℃)
4
(°C)
2010-07-10
SSM6L13TU
Q1 Data
|Yfs| - ID
ソース接地
25°C
-25°C
Ta=85°C
1.0
VGS= 0V
TaVGS=0V
= 25 °C
ドレイン逆電流
Drain
reverse current IDR
IDR(A)(A)
順方向伝達アドミタンス
|Yfs|
(S)
Forward transfer
admittance
⎪Yfs⎪
Common Source
Common Source
ソース接地
VDS = 3 V
IDVDS=3V
= 1 mA
Ta=25℃
Pulse test
1
D
G
IDR
0.1
25°C
Ta=85°C
-25°C
S
0.01
Ta=25℃
Pulse
test
0.1
0.001
0.01
0.1
1
Drain current ID (A)
ドレイン電流 ID (A)
10
0
C - VDS
Ciss
100
Coss
Common
Source
ソース接地
Crss
Ta =VGS=0V
25 °C
f = 1f=1MHz
MHz
VGS = 0 V
Ta=25℃
10
0.1
1
-0.2
-0.4
-0.6
-0.8
ドレイン・ソース間電圧
VDS (V)
(V)
Drain–source voltage VDS
10
toff
Drain-source voltage VDSVDS(V)
ドレイン・ソース間電圧
(V)
5
Common
Source
ソース接地
VDD = 10 V
VDD=10V
VGS = 0 to 2.5 V
VGS=0～2.5V
Ta = 25 °C
Ta=25℃
100
tf
10
ton
tr
1
0.01
100
-1
t - ID
1000
Switching time tt (ns)
(ns)
スイッチング時間
1000
Capacitance
C (pF)
静電容量
C (pF)
IDR - VDS
10
(S)
10.0
0.1
1
ドレイン電流
Drain
current IID
(A)
D (A)
10
2010-07-10
SSM6L13TU
Q2 Data
ID - VDS
-2
-10
-4.0
ID - VGS
-10
-2.5
Drain current ID (A)
ドレイン電流 ID (A)
Drain
current ID ID
(A)(A)
ドレイン電流
-1
-1.8
-1
-1.5
Ta=85°C
-0.1
25°C
-0.01
-25°C
-0.001
Common
Source
ソース接地
VDS = -3 V
Common Source
VGS=-1.2V ソース接地
Ta = 25 °C
Ta=25℃
VDS=-3V
Pulse test
-00
0
-0.0
-0.2
-0.4
-0.6
-0.8
0
-0
-1.0
Drain–source voltage VVDS
(V)
ドレイン・ソース間電圧
DS (V)
RDS(ON) - VGS
Pulse test
Drain–source ON-resistance
ドレイン・ソース
RDS (ON) 間オン抵抗
(mΩ)
RDS(ON) (mΩ)
間オン抵抗
Drain–source ON-resistance
ドレイン・ソース
R
(mΩ)
DS (ON) (mΩ)
RDS(ON)
Common
Source
ソース接地
Pulse test
-0.4A
300
200
ID=-0.1A
100
400
-2.5V,-0.4A
200
VGS=-4V,ID=-0.6A
100
0
-0
0
-1
-60 -40 -20 0
-2 -3 -4 -5 -6 -7 -8 -9 -10
ゲート・ソース間電圧
(V)
Gate–source voltage VVGS
GS (V)
350
Gate threshold voltage Vth (V)
ゲートしきい値電圧　Vth(V)
300
-2.5V
200
VGS=-4V
150
100
Common Source
Taソース接地
= 25°C
50
0
-0
Common
Source
ソース接地
VDS = -3 V
ID=-1mA
ID = -1 mA
-0.8
VDS=-3V
-0.6
-0.4
-0.2
-0
0
Pulse
test
Ta=25℃
0
-60 -40 -20 0
-1
Drain current ID (A)
ドレイン電流 ID (A)
(°C)
Vth - Ta
-1
-1.8V
250
20 40 60 80 100 120 140 160
周囲温度　Ta(℃)
Ambient
temperature Ta
RDS(ON) - ID
400
Drain–source ON-resistance
-1.8V,-0.1A
300
0
ドレイン・ソース間オン抵抗
RDS (ON) (mΩ)
RDS(ON) (mΩ)
-2
RDS(ON) - Ta
Common
Source
ソース接地
Ta
= 25 °C
Ta=25°C
-0.6A
-1
Gate–source
voltage VGSVGS(V)
ゲート・ソース間電圧
(V)
500
500
400
Pulse test
-0.0001
-2
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
周囲温度　Ta(℃)
6
2010-07-10
SSM6L13TU
Q2 Data
|Yfs| - ID
IDR - VDS
10
Common Source
Vソース接地
GS=0V
(A)
TaVGS=0V
= 25°C
ドレイン逆電流 IDRDR
(A)
⎪Yfs⎪
Ta=25℃
Pulse
test
1
Drain reverse current
I
25°C
Forward transfer
admittance
|Yfs|
(S)
順方向伝達アドミタンス
(S)
10.0
-25°C
Ta=85°C
1.0
Common Source
ソース接地
VDS = -3 V
VDS=-3V
Ta
= 25°C
25°C
-25°C
0.1
Ta=85°C
0.01
Ta=25℃
Pulse
test
0.1
0.001
-0.01
-0.1
-1
-10
0
0.2
0.4
0.6
0.8
Drain–source voltage VDS
ドレイン・ソース間電圧
VDS(V)
(V)
Drain current IID
(A)
D (A)
ドレイン電流
C - VDS
Ciss
100
Coss
Common
Source
ソース接地
Crss
Ta = 25 °C
VGS=0V
f = 1 MHz
f=1MHz
VGS = 0 V
10
-0.1
-10
toff
tf
10
ton
tr
1
-0.01
-100
-0.1
* Transient 過渡熱抵抗
thermal impedance
rth (°Cr/W)
th (°C/W )
Ppower許容損失
dissipation PD(mW)
PD (mW)
1000
(1): Mounted on FR4 board
800
①FR4基板実装時
(25.4mm × 25.4mm × 1.6mm)
Cu Pad : 645 mm2)
(25.4mm×25.4mm×1.6t)
(2): Mounted on ceramic board
× 25.4mm × 0.8mm)
Cu(25.4mm
Pad :645mm2
②ｾﾗﾐｯｸ基板実装時
Cu Pad : 645 mm2)
(25.4mm×25.4mm×0.8t)
Cu Pad :645mm 2
600
①
400
200
0
0
20
40
60
80 100 120 140 160
Ambient
temperature
周囲温度
Ta(℃)Ta
-10
rth - tw
PD - Ta
②
-1
ドレイン電流
(A)
Drain
current IDID (A)
Drain-source voltage VDSVDS(V)(V)
ドレイン・ソース間電圧
1000
Common Source
ソース接地
VDD = -10 V
VGSVDD=-10V
= 0 to -2.5 V
Ta =VGS=0～-2.5V
25 °C
RG Ta=25℃
= 4.7Ω
100
Ta=25℃
-1
t - ID
1000
Switching time t (ns)
スイッチング時間 t (ns)
静電容量
C (pF)
Capacitance
C (pF)
1000
1
c
b
100
a
Single pulse
a : Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b : Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c : Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
10
1
0.001
0.01
0.1
Pulse width
(°C)
7
10
1
tw
100
1000
(s)
2010-07-10
SSM6L13TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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2010-07-10