SSG4501
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
45
The SSG4501 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
o
0.375 REF
6.20
5.80
0.25
The SOP-8 package is universally preferred for all commercial
industrial surface mount application and suited for low
3.80
4.00
1.27Typ.
0.35
0.49
voltage applications such as DC/DC converters.
0.10~0.25
4.80
5.00
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* Simple Drive Requirement
* Lower On-resistance
* Fast Switching Performance
Date Code
D1
D1
D2
D2
8
7
6
5
D1
D2
4501SS
G2
G1
1
2
3
4
S1
G1
S2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
Pulsed Drain Current
V
V
7
-5.3
A
o
ID@TA=70 C
5.8
-4.7
A
IDM
20
-20
A
PD@TA=25 C
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
-30
±20
o
T otal Power Dissipation
30
±20
ID@TA=25 C
1
Unit
o
VGS
3
Ratings
Symbol
2.0
W
0.016
W/ C
-55~+150
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
62.5
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 9
SSG4501
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
o
Electrical Characteristics N Channel( Tj=25 C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
Drain-Source Leakage Current (Tj=70 C )
Static Drain-Source On-Resistance2
Symbol
Min.
Typ.
Max.
Unit
BVDSS
30
_
_
V
BVDS/ Tj
_
0.02
_
V/ C
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
1
uA
VDS=30V,VGS=0
_
_
25
uA
VDS=24V,VGS=0
_
_
28
IDSS
RDS(ON)
_
_
42
8.4
_
2.1
_
4.7
_
Total Gate Charge 2
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Td(ON)
_
6
_
Tr
_
5.2
_
Td(Off)
_
18.8
_
Tf
_
4.4
_
_
645
Ciss
Output Capacitance
Unless otherwise specified)
Coss
_
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
nC
ID=7A
VDS=24V
VGS=4.5V
VDD=15V
ID=1A
nS
VGS=10V
RG=3.3Ω
RD=15 Ω
_
150
_
95
_
pF
VGS=0V
VDS=25V
S
VDS=10V, ID=7A
f=1.0MHz
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
13
_
Min.
Typ.
Max.
Unit
VSD
_
_
1.2
V
IS=7A, VGS=0V.Tj=25 oC
Is
_
_
1.67
A
VD=VG=0V,VS=1.2V
Source-Drain Diode
Parameter
2
Forward On Voltage
Continous Source Current (Body Diode)
Symbol
Test Condition
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 9
SSG4501
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
o
Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Static Drain-Source On-Resistance
2
Min.
Typ.
Max.
BVDSS
-30
_
_
BVDS/ Tj
_
-0.028
VGS(th)
-1.0
_
-3.0
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=± 20V
_
_
-1
uA
VDS=-30V,VGS=0
_
_
-25
uA
VDS=-24V,VGS=0
_
_
IDSS
RDS(ON)
_
50
_
_
90
20
_
Total Gate Charge 2
Qg
_
Gate-Source Charge
Qgs
_
3.5
_
Gate-Drain ("Miller") Charge
Qgd
_
2
_
Td(ON)
_
12
_
Tr
_
20
_
Td(Off)
_
45
_
Tf
_
27
_
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
_
Crss
_
Gfs
_
790
440
Unit
V
V/ oC
mΩ
Test Condition
VGS=0V, ID=-250uA
Reference to 25oC, ID=-1mA
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
nC
ID=-5.3A
VDS=-15V
VGS=-10V
VDS=-15V
ID=-1A
nS
VGS=-10V
RG=6 Ω
RD=15Ω
_
_
120
_
8.5
_
Min.
Typ.
Max.
VSD
_
_
Is
_
_
pF
VGS=0V
VDS=-15V
S
VDS=-10V, ID=-5.3A
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Continous Source Current (Body Diode)
Symbol
Unit
Test Condition
-1.2
V
IS=-2.6A,VGS=0V.Tj=25 oC
-1.67
A
VD=VG=0V,VS=-1.2V
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 9
SSG4501
Elektronische Bauelemente
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Enhancement Mode Power Mos.FET
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 4 of 9
SSG4501
Elektronische Bauelemente
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Enhancement Mode Power Mos.FET
N-Channel
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 5 of 9
SSG4501
Elektronische Bauelemente
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Enhancement Mode Power Mos.FET
N-Channel
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 6 of 9
SSG4501
Elektronische Bauelemente
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Enhancement Mode Power Mos.FET
P-Channel
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Maximum Drain Current
http://www.SeCoSGmbH.com/
v.s. Case Temperature
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Type Power Dissipation
Any changing of specification will not be informed individual
Page 7 of 9
SSG4501
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Elektronische Bauelemente
Enhancement Mode Power Mos.FET
P-Channel
Description
GND
Typically a large storage capacitor is connected from this pin to ground to insure that the input
1.3V
or open= output enable.
tage does not sag below the minimum dropout voltage during the load
V higher than Vout in order for the device to
NC
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 8. Effective Transient Thermal Impedance
Any changing of specification will not be informed individual
Page 8 of 9
SSG4501
Elektronische Bauelemente
N Channel 7A, 30V,RDS(ON) 28mΩ
P Channel -5.3A, -30V,RDS(ON) 50m Ω
Enhancement Mode Power Mos.FET
P-Channel
h tp://www.SeCoSGmbH.com/
01-Jun-2002 Rev.A
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 9 of 9