SHENZHENFREESCALE AO6801E

AO6801E
30V Dual P-Channel MOSFET
General Description
The AO6801E combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
-30V
ID (at VGS=-10V)
-2A
RDS(ON) (at VGS=-10V)
< 110mΩ
RDS(ON) (at VGS=-4.5V)
< 135mΩ
RDS(ON) (at VGS=-2.5V)
< 185mΩ
Typical ESD protection
HBM Class 1C
D1
D2
Top View
G1
1
6
S2
2
5
S1
G2
3
4
D2
D1
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/5
Steady-State
Steady-State
A
0.70
W
0.45
TJ, TSTG
Symbol
t ≤ 10s
V
-15
PD
TA=70°C
±12
-1.6
IDM
TA=25°C
Power Dissipation B
Units
V
-2.0
ID
TA=70°C
Maximum
-30
RθJA
RθJL
-55 to 150
Typ
150
185
150
°C
Max
180
230
180
Units
°C/W
°C/W
°C/W
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AO6801E
30V Dual P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-15
TJ=55°C
µA
V
90
110
129
158
VGS=-4.5V, ID=-1.5A
105
135
mΩ
VGS=-2.5V, ID=-1A
140
185
mΩ
TJ=125°C
VDS=-5V, ID=-2A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±10
Forward Transconductance
Crss
-5
-1.5
gFS
Coss
Units
-1.05
VGS=-10V, ID=-2A
Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
A
7
-0.78
mΩ
S
-1
V
-1
A
305
pF
42
pF
26
pF
8.5
17
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7
12
nC
Qg(4.5V) Total Gate Charge
3.5
6
nC
Qgs
Gate Source Charge
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-2A
0.7
nC
Qgd
Gate Drain Charge
1.2
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
4
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, RL=7.5Ω,
RGEN=3Ω
23
ns
7
ns
IF=-2A, dI/dt=500A/µs
9.5
Body Diode Reverse Recovery Charge IF=-2A, dI/dt=500A/µs
13.5
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/5
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AO6801E
30V Dual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
-10V
VDS=-5V
-4.5V
8
-6V
10
-ID(A)
-ID (A)
6
-2.5V
4
125°C
5
2
25°C
VGS=-2.0V
0
0
0
1
2
3
4
0
5
200
Normalized On-Resistance
VGS=-2.5V
RDS(ON) (mΩ
Ω)
160
140
VGS=-4.5V
120
100
80
VGS=-10V
3
4
VGS=-10V
ID=-2A
1.6
VGS=-4.5V
ID=-1.5A
1.4
17
5
2
VGS=-2.5V
10
1.2
ID=-1A
1
0.8
60
0
0
2
4
6
8
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
260
1.0E+01
ID=-2A
240
1.0E+00
220
40
200
1.0E-01
180
160
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
2
1.8
180
125°C
1.0E-02
140
1.0E-03
120
100
25°C
1.0E-04
80
25°C
60
0
3/5
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO6801E
30V Dual P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
10
VDS=-15V
ID=-2A
450
Ciss
400
350
Capacitance (pF)
-VGS (Volts)
8
6
4
300
250
200
150
Coss
100
2
50
0
Crss
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
TA=25°C
-ID (Amps)
RDS(ON)
limited
100µs
1.0
1ms
Power (W)
10µs
10.0
10ms
0.1
TJ(Max)=150°C
TA=25°C
1
10s
DC
0.0
0.01
0.1
10
1
-VDS (Volts)
10
0.1
1E-05
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=230°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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AO6801E
30V Dual P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
5/5
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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