PZT2907AT1, SPZT2907AT1G Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com Features SOT−223 CASE 318E STYLE 1 NPN Complement is PZT2222AT1 The SOT-223 package can be soldered using wave or reflow SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available* COLLECTOR 2, 4 1 BASE 3 EMITTER MARKING DIAGRAM MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −600 mAdc Symbol Max Unit PD 1.5 12 W mW/C RqJA 83.3 C/W Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25C Thermal Resistance Junction−to−Ambient (Note 1) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath Operating and Storage Temperature Range AYW P2F G G 1 P2F A Y W G (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† PZT2907AT1 SOT−223 1,000 / Tape & Reel PZT2907AT1G SOT−223 (Pb−Free) 1,000 / Tape & Reel SPZT2907AT1G SOT−223 (Pb−Free) 1,000 / Tape & Reel PZT2907AT3 SOT−223 4,000 / Tape & Reel PZT2907AT3G SOT−223 (Pb−Free) 4,000 / Tape & Reel Device TL TJ, Tstg 260 10 C Sec −65 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 with 1 oz and 713 mm2 of copper area. = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 9 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: PZT2907AT1/D PZT2907AT1, SPZT2907AT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max −60 − − −60 − − −5.0 − − − − −10 − − −50 − − −50 75 100 100 100 50 − − − − − − − − 300 − − − − − −0.4 −1.6 − − − − −1.3 −2.6 200 − − − − 8.0 − − 30 ton − − 45 td − − 10 tr − − 40 toff − − 100 ts − − 80 tf − − 30 Unit OFF CHARACTERISTICS Collector−Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = − 50 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCE = − 30 Vdc, VBE = 0.5 Vdc) ICEX Base−Emitter Cutoff Current (VCE = − 30 Vdc, VBE = − 0.5 Vdc) IBEX Vdc Vdc Vdc nAdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = − 0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (IC = − 500 mAdc, VCE = −10 Vdc) hFE Collector-Emitter Saturation Voltages (IC = −150 mAdc, IB = −15 mAdc) (IC = − 500 mAdc, IB = −50 mAdc) VCE(sat) Base-Emitter Saturation Voltages (IC = −150 mAdc, IB = −15 mAdc) (IC = − 500 mAdc, IB = − 50 mAdc) VBE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain − Bandwidth Product (IC = − 50 mAdc, VCE = − 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cc Input Capacitance (VEB = − 2.0 Vdc, IC = 0, f = 1.0 MHz) Ce MHz pF pF SWITCHING TIMES Turn-On Time Delay Time Rise Time (VCC = − 30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) Turn-Off Time Storage Time Fall Time (VCC = − 6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = −15 mAdc) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 ns ns PZT2907AT1, SPZT2907AT1G +15 V -30 V INPUT Zo = 50 W PRF = 150 Hz RISE TIME 2.0 ns INPUT Zo = 50 W PRF = 150 Hz RISE TIME 2.0 ns 200 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 0 -16 V -6.0 V 37 1.0 k TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 0 -30 V 50 50 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit f T, CURRENT‐GAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 1000 hFE, CURRENT GAIN TJ = 125C TJ = 25C 100 TJ = -55C 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 1000 100 VCE = -20 V TJ = 25C 10 -1.0 Figure 3. DC Current Gain -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 4. Current Gain Bandwidth Product -1.0 30 TJ = 25C -0.6 20 VBE(sat) @ IC/IB = 10 Ceb CAPACITANCE (pF) VOLTAGE (VOLTS) -0.8 VBE(on) @ VCE = -10 V -0.4 -0.2 10 7.0 Ccb 5.0 3.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) 2.0 -0.1 -500 Figure 5. “ON” Voltage -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 REVERSE VOLTAGE (VOLTS) Figure 6. Capacitances http://onsemi.com 3 PZT2907AT1, SPZT2907AT1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E q L STYLE 1: PIN 1. 2. 3. 4. L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10 − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10 BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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