SANYO ENA1185A

ECH8664R
Ordering number : ENA1185A
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8664R
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
•
•
•
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Unit
30
V
±12
V
7
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.3
W
Total Power Dissipation
PD
PT
1.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-003
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8664R-TL-H
Top View
Packing Type : TL
0.25
2.9
Marking
0.15
8
TK
5
2.3
4
1
0.65
Electrical Connection
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.9
0.25
LOT No.
TL
0.07
2.8
0 to 0.02
Bottom View
8
7
6
5
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
62712 TKIM/72308PE TIIM TC-00001451 No. A1185-1/7
ECH8664R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.5
VDS=10V, ID=3.5A
4.5
7.5
RDS(on)1
ID=3.5A, VGS=4.5V
12.5
18
23.5
mΩ
RDS(on)2
ID=3.5A, VGS=4.0V
13
19
25
mΩ
RDS(on)3
ID=2A, VGS=3.1V
14.5
21
27.3
mΩ
RDS(on)4
ID=2A, VGS=2.5V
14.5
24
34
mΩ
1
μA
±10
μA
1.3
V
S
Turn-ON Delay Time
td(on)
270
ns
Rise Time
tr
850
ns
Turn-OFF Delay Time
td(off)
Fall Time
Total Gate Charge
tf
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=7A
IS=7A, VGS=0V
3300
ns
1700
ns
10
nC
2.1
nC
2.0
nC
0.75
1.2
V
Switching Time Test Circuit
VDD=15V
VIN
4V
0V
ID=3.5A
RL=4.3Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
Rg
G
ECH8664R
P.G
50Ω
S
Rg=1kΩ
Ordering Information
Device
ECH8664R-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1185-2/7
ECH8664R
ID -- VDS
10.0
9
6
5
VGS=1.5V
4
3
5
4
3
1
0
0
0.3
0.4
0
0.5
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=2.0A
40
3.5A
35
30
25
20
15
10
5
0
2
4
6
8
Source Current, IS -- A
25°
-Ta=
5
C
75°C
25°C
3
2
1.0
7
5
0.1
2
3
5
7
2
1.0
3
5
Drain Current, ID -- A
7 10
IT13620
3
tf
2
1000
tr
7
5
td(on)
3
A
=2.0
, ID
V
5
.
=2
VGS
25
20
2
=3
S
5A
=3.
, ID
V
5
.
=4
VGS
A
=3.5
V, I D
15
=4.0
VGS
10
--40
--20
0
20
40
60
80
100
120
140
160
IT13619
IS -- VSD
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Diode Forward Voltage, VSD -- V
0.9
1.0
IT13621
VGS -- Qg
4.5
Gate-to-Source Voltage, VGS -- V
VDD=10V
VGS=4.5V
td(off)
5
VG
30
0.01
7
5
3
2
0.001
0.1
SW Time -- ID
7
35
Ambient Temperature, Ta -- °C
VDS=10V
7
=2
, ID
V
.1
10
7
5
3
2
10
2.5
IT13617
.0A
40
IT13618
| yfs | -- ID
3
2.0
45
5
-60
10
Gate-to-Source Voltage, VGS -- V
1.5
RDS(on) -- Ta
50
Ta=25°C
45
1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
50
0.5
IT13807
°C
25°
C
--25
°C
0.2
Ta=
75
0.1
25 °
C
1
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
6
2
0
Forward Transfer Admittance, | yfs | -- S
7
--25°C
7
Ta=
75°
C
Drain Current, ID -- A
Drain Current, ID -- A
8
2
Switching Time, SW Time -- ns
VDS=10V
9
8
2
ID -- VGS
10
V
4.5
V
4.0
V
3.1
V
2 .5
V
10
VDS=10V
ID=7A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
0.01
0
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7 10
IT13684
0
1
2
3
4
5
6
7
8
Total Gate Charge, Qg -- nC
9
10
IT13685
No. A1185-3/7
ECH8664R
ASO
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
PW≤10μs
IDP=60A
1m
s
10
ms
10
0m
s
ID=7A
DC
10
0μ
s
op
era
Operation in this
area is limited by RDS(on).
PD -- Ta
1.6
Allowable Power Dissipation, PD -- W
Drain Current, ID -- A
2
tio
0.1
7 Ta=25°C
5
Single pulse
3
2 When mounted on ceramic substrate
2
0.01 (900mm ×0.8mm) 1unit
2 3 5 7 1.0
2 3
0.01 2 3 5 7 0.1
n
When mounted on ceramic substrate
(900mm2×0.8mm)
1.4
1.3
1.2
To
tal
Di
ss
ip
1u
ati
ni
on
t
1.0
0.8
0.6
0.4
0.2
0
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT13808
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13799
No. A1185-4/7
ECH8664R
Embossed Taping Specification
ECH8664R-TL-H
No. A1185-5/7
ECH8664R
Outline Drawing
ECH8664R-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1185-6/7
ECH8664R
Note on usage : Since the ECH8664R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1185-7/7