ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 30 V ±12 V 7 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Power Dissipation PD PT 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-003 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8664R-TL-H Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 TK 5 2.3 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.9 0.25 LOT No. TL 0.07 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 62712 TKIM/72308PE TIIM TC-00001451 No. A1185-1/7 ECH8664R Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V 30 V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=3.5A 4.5 7.5 RDS(on)1 ID=3.5A, VGS=4.5V 12.5 18 23.5 mΩ RDS(on)2 ID=3.5A, VGS=4.0V 13 19 25 mΩ RDS(on)3 ID=2A, VGS=3.1V 14.5 21 27.3 mΩ RDS(on)4 ID=2A, VGS=2.5V 14.5 24 34 mΩ 1 μA ±10 μA 1.3 V S Turn-ON Delay Time td(on) 270 ns Rise Time tr 850 ns Turn-OFF Delay Time td(off) Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=4.5V, ID=7A IS=7A, VGS=0V 3300 ns 1700 ns 10 nC 2.1 nC 2.0 nC 0.75 1.2 V Switching Time Test Circuit VDD=15V VIN 4V 0V ID=3.5A RL=4.3Ω VOUT VIN D PW=10μs D.C.≤1% Rg G ECH8664R P.G 50Ω S Rg=1kΩ Ordering Information Device ECH8664R-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1185-2/7 ECH8664R ID -- VDS 10.0 9 6 5 VGS=1.5V 4 3 5 4 3 1 0 0 0.3 0.4 0 0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=2.0A 40 3.5A 35 30 25 20 15 10 5 0 2 4 6 8 Source Current, IS -- A 25° -Ta= 5 C 75°C 25°C 3 2 1.0 7 5 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 10 IT13620 3 tf 2 1000 tr 7 5 td(on) 3 A =2.0 , ID V 5 . =2 VGS 25 20 2 =3 S 5A =3. , ID V 5 . =4 VGS A =3.5 V, I D 15 =4.0 VGS 10 --40 --20 0 20 40 60 80 100 120 140 160 IT13619 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage, VSD -- V 0.9 1.0 IT13621 VGS -- Qg 4.5 Gate-to-Source Voltage, VGS -- V VDD=10V VGS=4.5V td(off) 5 VG 30 0.01 7 5 3 2 0.001 0.1 SW Time -- ID 7 35 Ambient Temperature, Ta -- °C VDS=10V 7 =2 , ID V .1 10 7 5 3 2 10 2.5 IT13617 .0A 40 IT13618 | yfs | -- ID 3 2.0 45 5 -60 10 Gate-to-Source Voltage, VGS -- V 1.5 RDS(on) -- Ta 50 Ta=25°C 45 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 50 0.5 IT13807 °C 25° C --25 °C 0.2 Ta= 75 0.1 25 ° C 1 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 6 2 0 Forward Transfer Admittance, | yfs | -- S 7 --25°C 7 Ta= 75° C Drain Current, ID -- A Drain Current, ID -- A 8 2 Switching Time, SW Time -- ns VDS=10V 9 8 2 ID -- VGS 10 V 4.5 V 4.0 V 3.1 V 2 .5 V 10 VDS=10V ID=7A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 100 0.01 0 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT13684 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 10 IT13685 No. A1185-3/7 ECH8664R ASO 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 PW≤10μs IDP=60A 1m s 10 ms 10 0m s ID=7A DC 10 0μ s op era Operation in this area is limited by RDS(on). PD -- Ta 1.6 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 2 tio 0.1 7 Ta=25°C 5 Single pulse 3 2 When mounted on ceramic substrate 2 0.01 (900mm ×0.8mm) 1unit 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 n When mounted on ceramic substrate (900mm2×0.8mm) 1.4 1.3 1.2 To tal Di ss ip 1u ati ni on t 1.0 0.8 0.6 0.4 0.2 0 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13808 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13799 No. A1185-4/7 ECH8664R Embossed Taping Specification ECH8664R-TL-H No. A1185-5/7 ECH8664R Outline Drawing ECH8664R-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1185-6/7 ECH8664R Note on usage : Since the ECH8664R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1185-7/7