Product specification BSS314PE OptiMOS™-P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=-10 V 140 mW VGS=-4.5 V 230 ID -1.5 A • ESD protected PG-SOT-23 • Qualified according AEC Q101 3 • 100% Lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 1 1 Type Package Tape and Reel Information BSS314PE PG-SOT23 H6327: 3000 pcs/ reel Marking YGs 2 2 3 Lead Free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C -1.5 T A=70 °C -1.2 -6.1 Unit A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 W 6 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16 V, di /dt =-200A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com [email protected] ±20 V 0.5 W -55 ... 150 °C 1000V to 2000V 260 °C °C 55/150/56 °C 1 of 3 Product specification BSS314PE Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - Gate threshold voltage V GS(th) V DS=VGS, I D=-6.3µA -1 -1.5 -2 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 °C - - -1 V DS=-30V, V GS=0V, T j=150 °C - - -100 V mA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -5 μA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-1.2A - 153 230 mW V GS=-10V, I D=-1.5A - 107 140 3 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.2 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. http://www.twtysemi.com [email protected] 2 of 3 Product specification BSS314PE Parameter Values Symbol Conditions Unit min. typ. max. - 221 294 - 126 168 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-15 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 7 11 Turn-on delay time t d(on) - 5.1 - Rise time tr - 3.9 - Turn-off delay time t d(off) - 12.4 - Fall time tf - 2.8 - Gate to source charge Q gs - -0.7 - Gate to drain charge Q gd - -0.3 - Gate charge total Qg - -2.9 - Gate plateau voltage V plateau - -3.2 - V - - -0.5 A - - -6.1 - 0.8 1.1 V - 12.5 - ns - 4.3 - nC V DD=-15V, V GS=-10 V, I D=-1.5 A, R G=6 W ns Gate Charge Characteristics V DD=-15V, I D=-1.5A, V GS=0 to -10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr http://www.twtysemi.com T A=25 °C V GS=0 V, I F=-1.5A, T j=25 °C V R=-15 V, I F=-1.5A, di F/dt =100 A/µs [email protected] 3 of 3