Product specification BSR302N ® OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS(on),max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated 3 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type Package BSR302N PG-SC-59 1 Tape and Reel Information L6327 = 3000 pcs. / reel 2 Marking Lead Free Packing LEs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 3.7 T A=70 °C 2.9 14.7 Unit A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=3.7 A, R GS=25 Ω 30 mJ Reverse diode dv /dt dv /dt I D=3.7 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114-HMB Soldering Temperature V 0.5 W -55 ... 150 °C 0 (0V to 250V) 260 °C IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com ±20 55/150/56 [email protected] 1 of 3 Product specification BSR302N Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 30 - - Gate threshold voltage V GS(th) V DS=VGS , I D=30 µA 1.2 1.7 2 Drain-source leakage current I DSS V DS=30 V, V GS=0 V, T j=25 °C - - 1 V DS=30 V, V GS=0 V, T j=150 °C - - 100 V μA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=2.9 A - 26 36 mΩ V GS=10 V, I D=3.7 A - 18 23 12 - Transconductance http://www.twtysemi.com g fs |V DS|>2|I D|R DS(on)max, I D=3.7 A [email protected] S 2 of 3 Product specification BSR302N Parameter Values Symbol Conditions Unit min. typ. max. - 564 750 - 202 269 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 28 43 Turn-on delay time t d(on) - 6.8 - Rise time tr - 3.2 - Turn-off delay time t d(off) - 16.2 - Fall time tf - 2.2 - Gate to source charge Q gs - 1.6 2.2 Gate to drain charge Q gd - 1.1 1.7 Gate charge total Qg - 4.4 6.6 Gate plateau voltage V plateau - 2.9 - V - - 0.8 A - - 14.7 - 0.8 1.2 - 13.5 - 5.0 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=3.7 A, R G=2.7 Ω pF ns Gate Charge Characteristics V DD=15 V, I D=3.7 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr http://www.twtysemi.com T A=25 °C V GS=0 V, I F=3.7 A, T j=25 °C V R=15 V, I F=3.7 A, di F/dt =100 A/µs [email protected] V ns - nC 3 of 3