SMD Type Product specification BSS169 ® SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 100 V R DS(on),max 12 Ω I Dss,min 0.09 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS169 SOT-23 Q67000-S322 E6327: 3000 pcs/reel SFs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.17 T A=70 °C 0.14 0.68 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.17 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS 6 ±20 ESD sensitivity (HBM) as per MIL-STD 883 Unit A kV/µs V Class 1 Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com Value [email protected] 0.36 W -55 ... 150 °C 55/150/56 4008-318-123 1 of 3 SMD Type Product specification BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-10 V, I D=250 µA 100 - - Gate threshold voltage V GS(th) V DS=3 V, I D=50 µA -2.9 -2.2 -1.8 Drain-source cutoff current I D(off) V DS=100 V, V GS=-10 V, T j=25 °C - - 0.1 V DS=100 V, V GS=-10 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Saturated drain current I DSS V GS=0 V, V DS=10 V 90 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.05 A - 5.3 12 V GS=10 V, I D=0.17 A - 2.9 6 |V DS|>2|I D|R DS(on)max, I D=0.14 A 0.10 0.19 - Transconductance http://www.twtysemi.com g fs [email protected] 4008-318-123 Ω S 2 of 3 SMD Type Product specification BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - 51 68 - 9 13 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 4 7 Turn-on delay time t d(on) - 2.9 4.2 Rise time tr - 2.7 4.0 Turn-off delay time t d(off) - 11 17 Fall time tf - 27 40 Gate to source charge Q gs - 0.12 0.16 Gate to drain charge Q gd - 0.9 1.4 Gate charge total Qg - 2.1 2.8 Gate plateau voltage V plateau - -0.43 - V - - 0.17 A - - 0.68 - 0.79 1.2 V - 20.5 25.6 ns - 9.7 12.1 nC V GS=-10 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=-3…7 V, I D=0.12 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=80 V, I D=0.12 A, V GS=-3 to 7 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr http://www.twtysemi.com T A=25 °C V GS=-10 V, I F=0.17 A, T j=25 °C V R=50 V, I F=0.12 A, di F/dt =100 A/µs [email protected] 4008-318-123 3 of 3