Product specification BSS316N ™ OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS(on),max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100%lead-free; RoHS compliant 3 • Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS316N SOT23 H6327: 3000 pcs/ reel SYs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.4 T A=70 °C 1.1 Pulsed drain current I D,pulse T A=25 °C 5.6 Avalanche energy, single pulse E AS I D=1.4 A, R GS=25 Ω 3.7 Reverse diode dv /dt dv /dt I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±20 V 0.5 W -55 ... 150 °C 0 (<250V) 260 °C IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com Unit 55/150/56 [email protected] 1 of 3 Product specification BSS316N Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 30 - - Gate threshold voltage V GS(th) V DS=VGS , I D=3.7 µA 1.2 1.6 2.0 Drain-source leakage current I DSS V DS=30 V, V GS=0 V, T j=25 °C - - 1 V DS=30 V, V GS=0 V, T j=150 °C - - 100 V μA Gate-source leakage current I GSS V GS=30 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=1.1 A - 191 280 mΩ V GS=10 V, I D=1.4 A - 119 160 2.3 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.1 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. http://www.twtysemi.com [email protected] 2 of 3 Product specification BSS316N Parameter Values Symbol Conditions Unit min. typ. max. - 71 94 - 26 35 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 5 7 Turn-on delay time t d(on) - 3.4 - Rise time tr - 2.3 - Turn-off delay time t d(off) - 5.8 - Fall time tf - 1 - Gate to source charge Q gs - 0.3 - Gate to drain charge Q gd - 0.2 - Gate charge total Qg - 0.6 - Gate plateau voltage V plateau - 3.4 - V - - 0.5 A - - 5.6 - 0.8 1.1 V - 9.1 - ns - 2.6 - nC V DD=15 V, V GS=10 V, I D=1.4 A, R G=6 Ω ns Gate Charge Characteristics V DD=15 V, I D=1.4 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr http://www.twtysemi.com T A=25 °C V GS=0 V, I F=1.4 A, T j=25 °C V R=10 V, I F=1.4 A, di F/dt =100 A/µs [email protected] 3 of 3