TYSEMI BSS316N

Product specification
BSS316N
™
OptiMOS 2 Small-Signal-Transistor
Product Summary
Features
30
V
V GS=10 V
160
mΩ
V GS=4.5 V
280
V DS
• N-channel
R DS(on),max
• Enhancement mode
• Logic level (4.5V rated)
1.4
ID
A
• Avalanche rated
• Qualified according to AEC Q101
PG-SOT23
• 100%lead-free; RoHS compliant
3
• Halogen-free according to IEC61249-2-21
1
2
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSS316N
SOT23
H6327: 3000 pcs/ reel
SYs
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
1.4
T A=70 °C
1.1
Pulsed drain current
I D,pulse
T A=25 °C
5.6
Avalanche energy, single pulse
E AS
I D=1.4 A, R GS=25 Ω
3.7
Reverse diode dv /dt
dv /dt
I D=1.4 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
A
mJ
kV/µs
±20
V
0.5
W
-55 ... 150
°C
0 (<250V)
260 °C
IEC climatic category; DIN IEC 68-1
http://www.twtysemi.com
Unit
55/150/56
[email protected]
1 of 3
Product specification
BSS316N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint
1)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
30
-
-
Gate threshold voltage
V GS(th)
V DS=VGS , I D=3.7 µA
1.2
1.6
2.0
Drain-source leakage current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=30 V, V GS=0 V,
T j=150 °C
-
-
100
V
μA
Gate-source leakage current
I GSS
V GS=30 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=1.1 A
-
191
280
mΩ
V GS=10 V, I D=1.4 A
-
119
160
2.3
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=1.1 A
S
1)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB.
http://www.twtysemi.com
[email protected]
2 of 3
Product specification
BSS316N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
71
94
-
26
35
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=15 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
5
7
Turn-on delay time
t d(on)
-
3.4
-
Rise time
tr
-
2.3
-
Turn-off delay time
t d(off)
-
5.8
-
Fall time
tf
-
1
-
Gate to source charge
Q gs
-
0.3
-
Gate to drain charge
Q gd
-
0.2
-
Gate charge total
Qg
-
0.6
-
Gate plateau voltage
V plateau
-
3.4
-
V
-
-
0.5
A
-
-
5.6
-
0.8
1.1
V
-
9.1
-
ns
-
2.6
-
nC
V DD=15 V, V GS=10 V,
I D=1.4 A, R G=6 Ω
ns
Gate Charge Characteristics
V DD=15 V, I D=1.4 A,
V GS=0 to 5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
http://www.twtysemi.com
T A=25 °C
V GS=0 V, I F=1.4 A,
T j=25 °C
V R=10 V, I F=1.4 A,
di F/dt =100 A/µs
[email protected]
3 of 3