Product specification BSS215P OptiMOS™ P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS(on),max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23 • Qualified according to AEC Q101 3 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS215P PG-SOT23 H6327: 3000 pcs/ reel YDs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C -1.5 T A=70 °C -1.18 Unit A Pulsed drain current I D,pulse T A=25 °C -6 Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 Ω 11 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com [email protected] ±12 V 0.5 W -55 ... 150 °C 0 (<250V) V 260 °C °C 55/150/56 °C 1 of 3 Product specification BSS215P Parameter Values Symbol Conditions Unit min. typ. max. - - 250 -20 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA Gate threshold voltage V GS(th) V DS=VGS, I D=-11 µA -1.2 -0.9 -0.6 Drain-source leakage current I DSS V DS=-20V, V GS=0 V, T j=25 °C - - -1 V DS=-20V, V GS=0V, T j=150 °C - - -100 V μA Gate-source leakage current I GSS V GS=-12V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=-1.1 A - 166 280 mΩ V GS=4.5 V, I D=-1.5 A - 105 150 |V DS|>2|I D|R DS(on)max, I D=1.18 A - 4.5 - Transconductance g fs S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. http://www.twtysemi.com [email protected] 2 of 3 Product specification BSS215P Parameter Values Symbol Conditions Unit min. typ. max. - 260 346 - 102 135 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 85 128 Turn-on delay time t d(on) - 6.7 - Rise time tr - 9.7 - Turn-off delay time t d(off) - 14.5 - Fall time tf - 14.0 - Gate to source charge Q gs - -0.49 - Gate to drain charge Q gd - -1.9 - Gate charge total Qg - -3.6 - Gate plateau voltage V plateau - -1.9 - V - - -0.5 A - - -6 - -0.8 -1.1 V - 21.0 - ns - -3.7 - nC V GS=0 V, V DS=-15 V, f =1 MHz V DD=-10 V, V GS=-4.5 V, I D=-1.5 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=16 V, I D=-1.5 A, V GS=0 to -4.5 V nC Reverse Diode Diode continous forward current IS T A=25 °C Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr http://www.twtysemi.com V GS=0 V, I F=-1.5 A, T j=25 °C V R=10 V, I F=-1.5 A, di F/dt =100 A/µs [email protected] 3 of 3