SMD Type Product specification BSS139 ® SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 250 V R DS(on),max 30 Ω I DSS,min 0.03 A • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS139 SOT-23 Q62702-S612 E6327: 3000 pcs/reel STs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.10 T A=70 °C 0.08 0.4 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.1 A, V DS=200 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS 6 ±20 ESD sensitivity (HBM) as per MIL-STD 883 Unit A kV/µs V Class 1 Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com Value [email protected] 0.36 W -55 ... 150 °C 55/150/56 4008-318-123 1 of 3 SMD Type Product specification BSS139 Parameter Values Symbol Conditions Unit min. typ. max. - - 350 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-3 V, I D=250 µA 250 - - Gate threshold voltage V GS(th) V DS=3 V, I D=56 µA -2.1 -1.4 -1 Drain-source leakage current I D (off) V DS=250 V, V GS=-3 V, T j=25 °C - - 0.1 V DS=250 V, V GS=-3 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA Saturated drain current I DSS V GS=0 V, V DS=10 V 30 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=15 mA - 12.5 30 V GS=10 V, I D=0.1 A - 7.8 14.0 |V DS|>2|I D|R DS(on)max, I D=0.08 A 0.06 0.13 - Transconductance http://www.twtysemi.com g fs [email protected] 4008-318-123 Ω S 2 of 3 SMD Type Product specification BSS139 Parameter Values Symbol Conditions Unit min. typ. max. - 60 76 - 6.7 8.4 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 2.6 3.3 Turn-on delay time t d(on) - 5.8 8.7 Rise time tr - 5.4 8.1 Turn-off delay time t d(off) - 29 43 Fall time tf - 182 273 Gate to source charge Q gs - 0.14 0.21 Gate to drain charge Q gd - 1.3 2.0 Gate charge total Qg - 2.3 3.5 Gate plateau voltage V plateau - -0.28 - V - - 0.10 A - - 0.4 - 0.81 1.2 V - 8.6 12.9 ns - 2.1 3.1 nC V GS=-3 V, V DS=25 V, f =1 MHz V DD=125 V, V GS=-3...5 V, I D=0.04 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=200 V, I D=0.04 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr http://www.twtysemi.com T A=25 °C V GS=-3 V, I F=0.1 A, T j=25 °C V R=50 V, I F=0.04 A, di F/dt =100 A/µs [email protected] 4008-318-123 3 of 3