TYSEMI BSS806N

Product specification
BSS806N
™
OptiMOS 2 Small-Signal-Transistor
Product Summary
Features
20
V
V GS=2.5 V
57
mΩ
V GS=1.8 V
82
V DS
• N-channel
R DS(on),max
• Enhancement mode
• Ultra Logic level (1.8V rated)
2.3
ID
A
• Avalanche rated
• Qualified according to AEC Q101
PG-SOT23
• 100% lead-free; RoHS compliant
3
• Halogen-free according to IEC61249-2-21
1
2
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSS806N
SOT23
H6327: 3000 pcs/ reel
YEs
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
2.3
T A=70 °C
1.9
Unit
A
Pulsed drain current
I D,pulse
T A=25 °C
9.3
Avalanche energy, single pulse
E AS
I D=2.3 A, R GS=25 Ω
10.8
Reverse diode dv /dt
dv /dt
I D=2.3 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
±8
V
Power dissipation1)
P tot
0.5
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
0(<250V)
260 °C
IEC climatic category; DIN IEC 68-1
http://www.twtysemi.com
mJ
55/150/56
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Product specification
BSS806N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
20
-
-
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint
1)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D= 250 µA
Gate threshold voltage
V GS(th)
V DS=VGS , I D=11 µA
0.3
0.55
0.75
Drain-source leakage current
I DSS
V DS=20 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=20 V, V GS=0 V,
T j=150 °C
-
-
100
V
μA
Gate-source leakage current
I GSS
V GS=8 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=1.8 V, I D=1.3 A
-
57
82
mΩ
V GS=2.5 V, I D=2.3 A
-
41
57
9
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=1.9 A
S
1)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
of the PCB.
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Product specification
BSS806N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
370
529
-
118
169
Dynamic characteristics
pF
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
20
29
Turn-on delay time
t d(on)
-
7.5
-
Rise time
tr
-
9.9
-
Turn-off delay time
t d(off)
-
12.0
-
Fall time
tf
-
3.7
-
Gate to source charge
Q gs
-
0.55
-
Gate to drain charge
Q gd
-
0.58
-
Gate charge total
Qg
-
1.7
-
Gate plateau voltage
V plateau
-
1.5
-
V
-
-
0.5
A
-
-
9.3
-
0.82
1.1
V
-
11
-
ns
-
3.3
-
nC
V GS=0 V, V DS=10 V,
f =1 MHz
V DD=10 V, V GS=2.5 V,
I D=2.3A, R G=6 Ω
ns
Gate Charge Characteristics
V DD=10 V, I D=2.3 A,
V GS=0 to 2.5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
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T A=25 °C
V GS=0 V, I F=2.3 A,
T j=25 °C
V R=10 V, I F=2.3 A,
di F/dt =100 A/µs
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