Product specification BSS806N ™ OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS(on),max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant 3 • Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS806N SOT23 H6327: 3000 pcs/ reel YEs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 2.3 T A=70 °C 1.9 Unit A Pulsed drain current I D,pulse T A=25 °C 9.3 Avalanche energy, single pulse E AS I D=2.3 A, R GS=25 Ω 10.8 Reverse diode dv /dt dv /dt I D=2.3 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±8 V Power dissipation1) P tot 0.5 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature 0(<250V) 260 °C IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com mJ 55/150/56 [email protected] 1 of 3 Product specification BSS806N Parameter Values Symbol Conditions Unit min. typ. max. - - 250 20 - - Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 µA Gate threshold voltage V GS(th) V DS=VGS , I D=11 µA 0.3 0.55 0.75 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=150 °C - - 100 V μA Gate-source leakage current I GSS V GS=8 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=1.8 V, I D=1.3 A - 57 82 mΩ V GS=2.5 V, I D=2.3 A - 41 57 9 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=1.9 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. http://www.twtysemi.com [email protected] 2 of 3 Product specification BSS806N Parameter Values Symbol Conditions Unit min. typ. max. - 370 529 - 118 169 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 20 29 Turn-on delay time t d(on) - 7.5 - Rise time tr - 9.9 - Turn-off delay time t d(off) - 12.0 - Fall time tf - 3.7 - Gate to source charge Q gs - 0.55 - Gate to drain charge Q gd - 0.58 - Gate charge total Qg - 1.7 - Gate plateau voltage V plateau - 1.5 - V - - 0.5 A - - 9.3 - 0.82 1.1 V - 11 - ns - 3.3 - nC V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=2.5 V, I D=2.3A, R G=6 Ω ns Gate Charge Characteristics V DD=10 V, I D=2.3 A, V GS=0 to 2.5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr http://www.twtysemi.com T A=25 °C V GS=0 V, I F=2.3 A, T j=25 °C V R=10 V, I F=2.3 A, di F/dt =100 A/µs [email protected] 3 of 3