FS30KMJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1414-0200 (Previous: MEJ02G0065-0101) Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 84 mΩ ID : 30 A Integrated Fast Recovery Diode (TYP.) : 80 ns Viso : 2000 V Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1. Gate 2. Drain 3. Source 1 1 2 3 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Ratings 100 ±20 30 120 30 30 120 25 – 55 to +150 Unit V V A A A A A W °C Tstg Viso – 55 to +150 2000 °C V — 2.0 g Storage temperature Isolation voltage Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH AC for 1 minute, Terminal to case Typical value FS30KMJ-2 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min 100 — — 1.0 — — — — — — — — — — — — — Typ — — — 1.5 65 70 0.98 23 1800 230 120 17 46 135 95 1.0 — Max — ±0.1 0.1 2.0 84 91 1.26 — — — — — — — — 1.5 5.00 Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W trr — 80 — ns Reverse recovery time Rev.2.00 Aug 07, 2006 page 2 of 6 Test Conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V ID = 15 A, VGS = 4 V ID = 15 A, VGS = 10 V ID = 15 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 50 V, ID = 15 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 15 A, VGS = 0 V Channel to case IS = 30 A, dis/dt = – 100 A/µs FS30KMJ-2 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve 3 2 40 Drain Current ID (A) Power Dissipation PD (W) 50 30 20 10 0 0 50 100 150 200 10 µs 0µ s 101 7 5 3 2 100 7 5 3 = 10 D C Tc = 25°C Single Pulse 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) 50 20 VGS = 10V 6V 5V 40 Drain Current ID (A) Drain Current ID (A) tw 102 7 5 3 2 4V 30 Tc = 25°C Pulse Test 20 3V 10 Tc = 25°C Pulse Test 16 PD = 25W VGS = 10V 5V 4V 12 3V 8 2.5V 4 PD = 25W 0 1.0 2.0 3.0 4.0 0.8 1.2 1.6 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) ID = 50A 4.0 3.0 30A 2.0 1.0 10A 2 4 6 8 Gate-Source Voltage VGS (V) Rev.2.00 0.4 Drain-Source Voltage VDS (V) Tc = 25°C Pulse Test 0 0 Drain-Source Voltage VDS (V) 5.0 0 0 5.0 Aug 07, 2006 page 3 of 6 10 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 2.0 100 Tc = 25°C Pulse Test VGS = 4V 80 10V 60 40 20 0 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain Current ID (A) FS30KMJ-2 Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) 50 Tc = 25°C VDS = 10V Pulse Test 40 30 20 10 0 0 2 4 6 8 10 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) 2 75°C 125°C 101 7 5 4 3 2 100 0 10 2 3 4 5 7 102 Switching Characteristics (Typical) Tch = 25°C f = 1MHz VGS = 0V 104 7 5 3 2 Ciss 103 7 5 3 2 Coss 102 103 7 5 4 3 Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω 2 td(off) tf 102 7 5 4 3 tr 2 Crss td(on) 101 0 10 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 50 VGS = 0V Pulse Test Source Current IS (A) Tch = 25°C ID = 30A 8 6 VDS = 20V 50V 4 80V 2 0 2 3 4 5 7 101 Capacitance vs. Drain-Source Voltage (Typical) Switching Time (ns) Capacitance C (pF) Gate-Source Voltage VGS (V) Tc = 25°C Drain Current ID (A) 10 0 10 20 30 40 Gate Charge Qg (nC) Rev.2.00 VDS = 10V Pulse Test Gate-Source Voltage VGS (V) 2 7 5 3 2 102 7 5 4 3 Aug 07, 2006 page 4 of 6 50 40 30 20 Tc = 125°C 75°C 25°C 10 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 101 7 D = 1.0 5 3 0.5 2 0.2 100 0.1 7 5 3 2 10–1 0.05 0.02 0.01 Single Pulse PDM tw 7 5 3 2 T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) 101 7 VGS = 10V 5 ID = 15A 4 Pulse Test 3 Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS30KMJ-2 Aug 07, 2006 page 5 of 6 tr 90% td(off) tf FS30KMJ-2 Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FS30KMJ-2 FS30KMJ-2-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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