FK7KM-12 High-Speed Switching Use Nch Power MOS FET REJ03G1377-0200 (Previous: MEJ02G0237-0101) Rev.2.00 Jul 07, 2006 Features • • • • • VDSS : 600 V rDS (ON) (max) : 1.63 Ω ID : 7 A Viso : 2000 V Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1. Gate 2. Drain 3. Source 1 1 2 3 3 Applications Servo motor drive, Robot, UPS, Lamp ballast, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Symbol VDSS VGSS Ratings 600 ±30 Unit V V Drain current Drain current (Pulsed) ID IDM 7 21 A A IS ISM PD Tch Tstg Viso 7 21 35 – 55 to +150 – 55 to +150 2000 A A W °C °C Vrms — 2.0 g Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Rev.2.00 Jul 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V AC for 1 minute, Terminal to case Typical value FK7KM-12 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR) DSS V(BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) | yfs | Ciss Coss Crss td (on) tr td (off) tf VSD Rth(ch-c) trr Min. 600 ±30 — — 2 — — 3.3 — — — — — — — — — — Typ. — — — — 3 1.25 3.75 5.5 1100 125 17 30 30 100 35 1.5 — — Max. — — ±10 1 4 1.63 4.89 — — — — — — — — 2.0 3.57 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VGS = ±25 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VGS = 10 V ID = 3 A, VDS = 10 V VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 200 V, ID = 3 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 3 A, VGS = 0 V Channel to case IS = 7 A, dis/dt = –100 A/µs Performance Curves Power Dissipation Derating Curve Maximum Safe Operating Area 5 3 2 40 Drain Current ID (A) Power Dissipation PD (W) 50 30 20 10 0 0 50 100 150 Case Temperature Tc (°C) Rev.2.00 Jul 07, 2006 page 2 of 6 200 tw = 10µs 101 7 5 3 2 100 7 5 3 2 100µs Tc = 25°C Single Pulse 10–1 7 DC 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Drain-Source Voltage VDS (V) FK7KM-12 Output Characteristics (Typical) Output Characteristics (Typical) PD = 35W VGS = 20V 10V 6V Tc = 25°C Pulse Test 16 12 8 5V 4 VGS = 20V 10V 6V 10 Tc = 25°C Pulse Test Drain Current ID (A) Drain Current ID (A) 20 8 5V 6 4 PD = 35W 2 4V 4V 10 20 30 40 24 16 7A 8 3A 4 8 12 16 20 Drain Current ID (A) 16 20 5.0 Tc = 25°C Pulse Test 4.0 3.0 VGS = 10V 20V 2.0 1.0 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Gate-Source Voltage VGS (V) Drain Current ID (A) Transfer Characteristics (Typical) Forward Transfer Admittance vs. Drain Current (Typical) 20 Tc = 25°C VDS = 50V Pulse Test 16 12 8 4 4 8 12 16 Gate-Source Voltage VGS (V) Rev.2.00 12 On-State Resistance vs. Drain Current (Typical) ID = 14A 0 8 On-State Voltage vs. Gate-Source Voltage (Typical) 32 0 4 Drain-Source Voltage VDS (V) Tc = 25°C Pulse Test 0 0 Drain-Source Voltage VDS (V) 40 0 0 50 Drain-Source On-State Resistance rDS(ON) (Ω) 0 Jul 07, 2006 page 3 of 6 20 Forward Transfer Admittance | yfs | (S) Drain-Source On-State Voltage VDS(ON) (V) 0 101 7 VDS = 10V Pulse Test 5 Tc = 25°C 3 2 75°C 125°C 100 7 5 3 2 10–1 –1 10 2 3 5 7 100 2 3 Drain Current ID (A) 5 7 101 FK7KM-12 Capacitance vs. Drain-Source Voltage (Typical) Switching Characteristics (Typical) 103 Ciss 103 7 5 3 2 Coss 102 7 5 3 2 Crss Tch = 25°C 101 f = 1MHz 7 V GS = 0V 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 tf 3 2 tr t d(on) 5 7 100 2 3 Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 40 VGS = 0V Pulse Test Source Current IS (A) 16 VDS = 100V 200V 12 400V 8 4 0 20 40 60 80 Tc = 125°C 24 16 75°C 8 25°C 0 0.8 1.6 2.4 3.2 4.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) On-State Resistance vs. Channel Temperature (Typical) Threshold Voltage vs. Channel Temperature (Typical) 100 7 5 3 2 0 32 0 100 101 7 VGS = 10V 5 ID = 3A Pulse Test 3 2 10–1 5 7 101 2 3 Drain-Source Voltage VDS (V) 50 100 150 200 250 Channel Temperature Tch (°C) Jul 07, 2006 page 4 of 6 Gate-Source Threshold Voltage VGS(th) (V) Gate-Source Voltage VGS (V) Drain-Source On-State Resistance rDS(ON) (t°C) t d(off) 102 7 5 Tch = 25°C ID = 7 A 0 Drain-Source On-State Resistance rDS(ON) (25°C) 3 2 101 10–1 20 Rev.2.00 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 7 5 Switching Time (ns) Capacitance C (pF) 2 5.0 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 3 2 101 0 10 3 2 Irr 101 7 5 101 2 3 5 7 102 100 Tch = 25°C 7 Tch = 150°C 5 3 2 3 5 7 10 Source Current dis/dt (–A/µs) Transient Thermal Impedance Zth(ch-c) (°C/W) 101 7 5 Reverce Recovery Current Irr (ns) Reverce Recovery Time trr (ns) t rr 3 2 Irr 3 2 5 7 101 2 3 Transient Thermal Impedance Characteristics 101 7 5 D=1 3 2 0.5 100 7 5 3 2 0.2 0.1 PDM 0.05 0.02 0.01 10–1 7 5 3 2 tw T D= tw T Single Pulse 10–2 10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 Tch = 25°C Tch = 150°C 100 2 3 5 7 102 Source Current IS (A) 5 IS = 7A VGS = 0V 3 VDD = 250V 2 102 7 5 101 7 5 102 t rr 7 5 150 Diode Reverse vs. Source Currnet dis/dt Characteristic (Typical) 3 2 3 2 3 2 Channel Temperature Tch (°C) 5 102 dis/dt = –100A/µs 7 VGS = 0V 5 VDD = 250V 103 7 5 1.4 Jul 07, 2006 page 5 of 6 Reverce Recovery Current Irr (ns) Diode Reverse vs. Source Currnet Characteristic (Typical) Reverce Recovery Time trr (ns) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source Breakdown Voltage V(BR)DSS (25°C) FK7KM-12 tr 90% td(off) tf FK7KM-12 Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 1050 Type name Note: Please confirm the specification about the shipping in detail. Rev.2.00 Jul 07, 2006 page 6 of 6 Standard order code example FK7KM-12 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 © 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0