RENESAS FK7KM-12

FK7KM-12
High-Speed Switching Use
Nch Power MOS FET
REJ03G1377-0200
(Previous: MEJ02G0237-0101)
Rev.2.00
Jul 07, 2006
Features
•
•
•
•
•
VDSS : 600 V
rDS (ON) (max) : 1.63 Ω
ID : 7 A
Viso : 2000 V
Integrated Fast Recovery Diode (MAX.) : 150 ns
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
2
1. Gate
2. Drain
3. Source
1
1
2
3
3
Applications
Servo motor drive, Robot, UPS, Lamp ballast, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
Ratings
600
±30
Unit
V
V
Drain current
Drain current (Pulsed)
ID
IDM
7
21
A
A
IS
ISM
PD
Tch
Tstg
Viso
7
21
35
– 55 to +150
– 55 to +150
2000
A
A
W
°C
°C
Vrms
—
2.0
g
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Rev.2.00
Jul 07, 2006
page 1 of 6
Conditions
VGS = 0 V
VDS = 0 V
AC for 1 minute,
Terminal to case
Typical value
FK7KM-12
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR) DSS
V(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
| yfs |
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth(ch-c)
trr
Min.
600
±30
—
—
2
—
—
3.3
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
3
1.25
3.75
5.5
1100
125
17
30
30
100
35
1.5
—
—
Max.
—
—
±10
1
4
1.63
4.89
—
—
—
—
—
—
—
—
2.0
3.57
150
Unit
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test conditions
ID = 1 mA, VGS = 0 V
IG = ±100 µA, VDS = 0 V
VGS = ±25 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 3 A, VGS = 10 V
ID = 3 A, VGS = 10 V
ID = 3 A, VDS = 10 V
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDD = 200 V, ID = 3 A,
VGS = 10 V,
RGEN = RGS = 50 Ω
IS = 3 A, VGS = 0 V
Channel to case
IS = 7 A, dis/dt = –100 A/µs
Performance Curves
Power Dissipation Derating Curve
Maximum Safe Operating Area
5
3
2
40
Drain Current ID (A)
Power Dissipation PD (W)
50
30
20
10
0
0
50
100
150
Case Temperature Tc (°C)
Rev.2.00
Jul 07, 2006
page 2 of 6
200
tw = 10µs
101
7
5
3
2
100
7
5
3
2
100µs
Tc = 25°C
Single Pulse
10–1
7
DC
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Drain-Source Voltage VDS (V)
FK7KM-12
Output Characteristics (Typical)
Output Characteristics (Typical)
PD = 35W
VGS = 20V
10V
6V
Tc = 25°C
Pulse Test
16
12
8
5V
4
VGS = 20V
10V
6V
10
Tc = 25°C
Pulse Test
Drain Current ID (A)
Drain Current ID (A)
20
8
5V
6
4
PD =
35W
2
4V
4V
10
20
30
40
24
16
7A
8
3A
4
8
12
16
20
Drain Current ID (A)
16
20
5.0
Tc = 25°C
Pulse Test
4.0
3.0
VGS = 10V
20V
2.0
1.0
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Transfer Characteristics (Typical)
Forward Transfer Admittance vs.
Drain Current (Typical)
20
Tc = 25°C
VDS = 50V
Pulse Test
16
12
8
4
4
8
12
16
Gate-Source Voltage VGS (V)
Rev.2.00
12
On-State Resistance vs.
Drain Current (Typical)
ID = 14A
0
8
On-State Voltage vs.
Gate-Source Voltage (Typical)
32
0
4
Drain-Source Voltage VDS (V)
Tc = 25°C
Pulse Test
0
0
Drain-Source Voltage VDS (V)
40
0
0
50
Drain-Source On-State Resistance rDS(ON) (Ω)
0
Jul 07, 2006
page 3 of 6
20
Forward Transfer Admittance | yfs | (S)
Drain-Source On-State Voltage VDS(ON) (V)
0
101
7 VDS = 10V
Pulse Test
5
Tc = 25°C
3
2
75°C
125°C
100
7
5
3
2
10–1 –1
10
2 3
5 7 100
2 3
Drain Current ID (A)
5 7 101
FK7KM-12
Capacitance vs.
Drain-Source Voltage (Typical)
Switching Characteristics (Typical)
103
Ciss
103
7
5
3
2
Coss
102
7
5
3
2
Crss
Tch = 25°C
101 f = 1MHz
7 V
GS = 0V
5
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
tf
3
2
tr
t d(on)
5 7 100
2 3
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
40
VGS = 0V
Pulse Test
Source Current IS (A)
16
VDS = 100V
200V
12
400V
8
4
0
20
40
60
80
Tc =
125°C
24
16
75°C
8
25°C
0
0.8
1.6
2.4
3.2
4.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
On-State Resistance vs.
Channel Temperature (Typical)
Threshold Voltage vs.
Channel Temperature (Typical)
100
7
5
3
2
0
32
0
100
101
7 VGS = 10V
5 ID = 3A
Pulse Test
3
2
10–1
5 7 101
2 3
Drain-Source Voltage VDS (V)
50
100
150
200
250
Channel Temperature Tch (°C)
Jul 07, 2006
page 4 of 6
Gate-Source Threshold Voltage VGS(th) (V)
Gate-Source Voltage VGS (V)
Drain-Source On-State Resistance rDS(ON) (t°C)
t d(off)
102
7
5
Tch = 25°C
ID = 7 A
0
Drain-Source On-State Resistance rDS(ON) (25°C)
3
2
101
10–1
20
Rev.2.00
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
7
5
Switching Time (ns)
Capacitance C (pF)
2
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
3
2
101 0
10
3
2
Irr
101
7
5
101
2 3
5 7 102
100
Tch = 25°C
7
Tch = 150°C
5
3
2 3
5 7 10
Source Current dis/dt (–A/µs)
Transient Thermal Impedance Zth(ch-c) (°C/W)
101
7
5
Reverce Recovery Current Irr (ns)
Reverce Recovery Time trr (ns)
t rr
3
2
Irr
3
2
5 7 101
2 3
Transient Thermal Impedance Characteristics
101
7
5 D=1
3
2 0.5
100
7
5
3
2
0.2
0.1
PDM
0.05
0.02
0.01
10–1
7
5
3
2
tw
T
D= tw
T
Single Pulse
10–2
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RGEN
RL
Vin
Vout
10%
10%
10%
VDD
RGS
90%
td(on)
Rev.2.00
Tch = 25°C
Tch = 150°C
100
2 3
5 7 102
Source Current IS (A)
5
IS = 7A
VGS = 0V
3
VDD = 250V
2
102
7
5
101
7
5
102 t rr
7
5
150
Diode Reverse vs.
Source Currnet dis/dt Characteristic (Typical)
3
2
3
2
3
2
Channel Temperature Tch (°C)
5
102
dis/dt = –100A/µs
7
VGS = 0V
5
VDD = 250V
103
7
5
1.4
Jul 07, 2006
page 5 of 6
Reverce Recovery Current Irr (ns)
Diode Reverse vs.
Source Currnet Characteristic (Typical)
Reverce Recovery Time trr (ns)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
FK7KM-12
tr
90%
td(off)
tf
FK7KM-12
Package Dimensions
Package Name
TO-220FN
JEITA Package Code

RENESAS Code
PRSS0003AB-A
Previous Code

MASS[Typ.]
2.0g
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ3.2 ± 0.2
3.6 ± 0.3
15 ± 0.3
10 ± 0.3
14 ± 0.5
Unit: mm
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
1050 Type name
Note: Please confirm the specification about the shipping in detail.
Rev.2.00
Jul 07, 2006
page 6 of 6
Standard order
code example
FK7KM-12
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