Transistors SMD Type NPN Transistors TIP41 Series (KIP41 Series) TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 ■ Features ● Medium Power Linear Switching Applications +0.15 1.50 -0.15 Unit: mm +0.1 2.30 -0.1 +0.8 0.50 -0.7 0.60-+ 0.1 0.1 +0.15 5.55 -0.15 +0.25 2.65 -0.1 2.3 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 3 .8 0 ● Complement to TIP42/42A/42B/42C +0.15 4 .60 -0.15 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol TIP41 TIP41A TIP41B TIP41C Collector - Base Voltage VCBO 40 60 80 100 Collector - Emitter Voltage VCEO 40 60 80 100 Emitter - Base Voltage VEBO IC 6 Collector Current - Pulse ICP 10 Base Current IB 2 Ta=25°C Junction Temperature Storage Temperature range PC V 5 Collector Current - Continuous Collector Power Dissipation Tc=25°C Unit 20 2 TJ 150 Tstg -65 to 150 A W ℃ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors TIP41 Series (KIP41 Series) ■ Electrical Characteristics Ta = 25℃ Symbol Parameter Test Conditions TIP41 Collector- base breakdown voltage Collector-emitter sustaining voltage TIP41A VCBO TIP41B Ic= 100 μA， IE=0 40 VEBO Collector-base cut-off current Collector- emittercut-off current Collector- emittercut-off current Emitter cut-off current Ic= 30 mA， IB=0 ICEO IE= 100μA， IC=0 TIP41 VCB= 40 V , IE=0 TIP41A VCB= 60 V , IE=0 TIP41B VCB= 80 V , IE=0 TIP41C VCB= 100 V , IE=0 TIP41/41A VCE= 30 V , IE=0 TIP41B/41C VCE= 60 V , IE=0 TIP41 VCE= 40 V , IE=0 TIP41A VCE= 60 V , IE=0 TIP41B VCE= 80 V , IE=0 TIP41C VCE= 100 V , IE=0 ICES IEBO VCE(sat) IC= 6 A, IB=-600mA VBE(sat) VCE= 4V, IC= 6 A Transition frequency www.kexin.com.cn hFE(2) fT 60 80 5 VEB= 5V , IC=0 Collector-emitter saturation voltage hFE(1) V 100 Base - emitter saturation voltage DC current gain 2 ICBO Unit 80 100 TIP41C Emitter - base breakdown voltage Max 60 TIP41 TIP41B Typ 40 TIP41C TIP41A VCEO(SUS) Min 0.1 uA 0.7 mA 400 uA 1 mA 1.5 2 VCE= 4V, IC= 300 mA 30 VCE= 4V, IC= 3 A 15 VCE= 10V, IC= 500mA 3 V 75 MHz Transistors SMD Type NPN Transistors TIP41 Series (KIP41 Series) 1000 hFE, DC CURRENT GAIN VCE = 4V 100 10 1 1 10 100 1000 VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE ■ Typical Characterisitics 10000 10000 IC /IB = 10 1000 V BE(sat) 100 V CE(sat) 10 1 10 IC[mA], COLLECTOR CURRENT 10000 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 IC(MAX) (PULSE) 10 0. 5 ms s 5m IC(MAX) (DC) s 1 TIP41 V CEO MAX. TIP41A VCEO MAX. TIP41B VCEO MAX. TIP41C VCEO MAX. 1 10 1 00 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Safe Operating Area PC[W], POWER DISSIPATION 25 1m IC[A], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain 0.1 100 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 4. Power Derating www.kexin.com.cn 3