HAT2217C Silicon N Channel MOS FET Power Switching REJ03G0449-0300 Rev.3.00 May 19.2005 Features • Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2 3 4 5 DDD D Index band 4 5 6 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 6 G 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note 2 Ratings 60 +20 / –10 3 12 3 Channel dissipation Pch 1.25 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm), PW ≤ 5 s Rev.3.00 May 19, 2005 page 1 of 6 Unit V V A A A W °C °C HAT2217C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Symbol V(BR)DSS Gate to Source breakdown voltage V(BR)GSS Min. 60 Typ. — Max. — Unit V — — V — — — 105 126 4.3 275 40 16 4.5 0.8 0.7 5 11 ±10 1 2 132 183 — — — — — — — — — µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns 35 3 0.85 — — 1.25 ns ns V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr +20 –10 — — 1 — — 2.8 — — — — — — — — Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test td(off) tf VDF — — — Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Rev.3.00 May 19, 2005 page 2 of 6 IGSS IDSS VGS(th) RDS(on) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = 16 / –8 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 1.5 A, VGS = 10 V Note3 ID = 1.5 A, VGS = 4.5 V Note3 ID = 1.5 A, VGS = 10 V Note3 VGS = 0 f = 1 MHz VDS = 10 V VGS = 10 V VDS = 10 V ID = 3 A VGS = 10 V ID = 1.5 A VDD = 10 V RL = 6.6 Ω , Rg = 4.7 Ω IF = 3 A, VGS = 0 HAT2217C Main Characteristics Power vs. Temperature Derating Ta = 25°C,1shot pulse 100 µs ID (A) 30 1.2 10 0.8 0.4 PW 1 50 100 150 Ambient Temperature 0.1 200 8 VDS = 10 V Pulse Test Drain Current 6 Drain Current m s s 3 10 30 100 VDS (V) Typical Transfer Characteristics 10 3.5 V 3V 4 2.5 V 2 1 Drain to Source Voltage Ta (°C) Pulse Test 10 V m area is limited by RDS(on) 0.01 0.03 0.1 0.3 ID (A) ID (A) 5V 4V 10 Operation in this Typical Output Characteristics 10 1 = 0.3 0.03 0 When using the FR4 board. 10 µs 3 Drain Current Pch (W) Power Dissipation Maximum Safe Operation Area 100 1.6 −25°C 25°C 8 6 Tc = 75 °C 4 2 VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (mV) 800 Pulse Test 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 600 -4.5V 400 100 VGS = 10 V ID = 3 A 200 1.5 A 0.5 A 0 4 8 12 Gate to Source Voltage Rev.3.00 May 19, 2005 page 3 of 6 16 VGS (V) 20 10 0.1 1 Drain Current 10 ID (A) 100 HAT2217C Forward Transfer Admittance |yfs| (S) Static Drain to Source On State Resistance vs. Temperature 500 400 300 ID = 0.5,1.5 A 3A 200 VGS = 10V 3A 100 0.5,1.5 A 4.5V 0 −25 Pulse Test 0 25 50 75 Case Temperature 100 125 150 100 30 Tc = −25°C 10 25°C 3 0.3 0.1 0.1 VDD = 50 V 25 V 10 V 4 Capacitance C (pF) 8 VGS VGS (V) 12 Gate to Source Voltage VDS (V) Drain to Source Voltage VDD = 10 V 25 V 50 V 0 10 6 8 Qg (nC) 1000 Ciss 300 100 Coss 30 10 Crss 1 0 10 20 30 40 Drain to Source Voltage 50 60 VDS (V) Switching Characteristics 1000 tr 6 Switching Time t (ns) IDR (A) Reverse Drain Current VGS = 0 f = 1 MHz 10 V VGS = 0 , -10 V 4 2 Pulse Test 0.4 100 ID (A) 3 10 0 30 10 3000 Reverse Drain Current vs. Source to Drain Voltage 8 3 10000 16 2 4 Gate Charge 1 Typical Capacitance vs. Drain to Source Voltage VDD 0 0.3 Drain Current ID = 3 A 20 VDS = 10 V Pulse Test Tc (°C) 80 40 75°C 1 Dynamic Input Characteristics 60 Forward Transfer Admittance vs. Drain Current 0.8 1.2 Source to Drain Voltage Rev.3.00 May 19, 2005 page 4 of 6 1.6 VSD (V) 2.0 100 td(off) td(on) 10 tf 1 0.01 0.03 0.1 0.3 Drain Current 1 3 ID (A) 10 HAT2217C Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 4.7 Ω Vin 10 V VDS = 10 V Vout 10% 10% 90% td(on) Rev.3.00 May 19, 2005 page 5 of 6 tr 10% 90% td(off) tf HAT2217C Package Dimensions JEITA Package Code RENESAS Code Package Name PWSF0006JA-A MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g D A e c E A HE A x M LP L S b A Reference Symbol e A2 A A1 y S S e1 b b1 l1 HE L LP x y c1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b b1 c c1 D E e b2 e1 l1 Dimension in Millimeters Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Ordering Information Part Name HAT2217C-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 May 19, 2005 page 6 of 6 Sales Strategic Planning Div. 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