HAT2240C Silicon N Channel MOS FET Power Switching REJ03G1241-0400 Rev.4.00 Apr 05, 2006 Features • Low on-resistance RDS(on) = 75 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 2 3 4 5 DDD D 4 1 2 3 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Note1 Drain peak current ID (pulse) Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) Rev.4.00 Apr 05, 2006 page 1 of 6 Ratings 60 ±12 2.5 10 2.5 900 150 –55 to +150 Unit V V A A A mW °C °C HAT2240C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 60 ±12 — — 0.4 Typ — Max — Unit V — — — ±10 1 1.4 µA µA V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) — 75 98 mΩ ID = 1.3 A, VGS = 4.5 VNote3 RDS(on) — 85 119 mΩ ID = 1.3 A, VGS = 2.5 VNote3 |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 3.3 — — — — — — — — 5 590 60 35 17 50 41 4 6 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 1.3 A, VDS = 10 V Note3 Qgs Qgd VDF — — — 1.2 1.4 0.8 — — 1.1 nC nC V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Rev.4.00 Apr 05, 2006 page 2 of 6 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1.3 A VGS = 4.5 V, VDD = 10 V RL = 7.7 Ω, Rg = 4.7 Ω VDD = 10 V, VGS = 4.5 V ID = 2.5 A IF = 2.5 A, VGS = 0 Note3 HAT2240C Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 s 1 100 10 Typical Output Characteristics Typical Transfer Characteristics 10 VDS = 10 V Pulse Test Pulse Test 2.1 V 2V 2.2 V 2.5 V 1.9 V 10 V 1.8 V 4 1.7 V 1.6 V 2 Drain Current ID (A) Drain Current ID (A) m 0.1 0.01 1.5 V 8 6 4 –25°C 25°C Tc = 75°C 2 VGS = 0 V 2 4 6 8 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 400 Pulse Test 300 200 ID = 2.5 A 1.3 A 100 0.5 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.4.00 Apr 05, 2006 page 3 of 6 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) µs s Operation in this area is limited by RDS(on) Drain Source Voltage VDS (V) 6 0 m n tio 0.01 Ambient Temperature Ta (°C) 10 8 0.1 0.001 200 1 150 ra 100 10 50 = 0 pe 0.4 1 O 0.8 10 µs 10 0 10 1.2 When using the FR4 board. 1 shot pulse, Ta = 25°C Pw Drain Current ID (A) Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm) DC Power Dissipation Pch (W) 1.6 1000 Pulse Test 2.5 V 100 VGS = 4.5 V 10 0.1 1 10 Drain Current ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2240C 200 160 0.5 A, 1.3 A, 2.5 A 120 VGS = 2.5 V 80 ID = 0.5 A, 1.3 A, 2.5 A 4.5 V 40 Pulse Test 0 –25 0 25 50 75 Case Temperature 100 125 150 100 Tc = –25°C 10 1 VDS = 10 V Pulse Test 0.1 0.1 Typical Capacitance vs. Drain to Source Voltage VDD = 50 V 25 V 10 V 6 4 20 2 VDD = 50 V 25 V 10 V 4 6 8 1000 Ciss 300 100 Coss Crss 10 0 20 10 30 40 50 60 Gate Charge Qg (nC) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 1000 Pulse Test 8 4.5 V 6 2.5 V 4 VGS = 0 V 2 0 3000 VGS = 0 f = 1 MHz 30 Switching Time t (ns) 10 2 0 10 10000 Capacitance C (pF) VGS 40 0 Reverse Drain Current IDR (A) 8 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 80 VDD 10 3 Drain Current ID (A) Dynamic Input Characteristics 60 1 0.3 Tc (°C) ID = 2.5 A 75°C 25°C 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) Rev.4.00 Apr 05, 2006 page 4 of 6 VGS = 4.5 V, VDS = 10 V RG = 4.7 Ω, Ta = 25°C tr 100 td(off) td(on) 10 1 0.1 tf 0.3 1 3 Drain Current ID (A) 10 HAT2240C Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 4.7 Vin 4.5 V Vin Vout VDD = 10 V 10% 10% 90% td(on) Rev.4.00 Apr 05, 2006 page 5 of 6 10% tr 90% td(off) tf HAT2240C Package Dimensions JEITA Package Code Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L b S A Reference Symbol e A2 A A1 y S S e1 b b1 l1 c1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1 Dimension in Millimeters Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Ordering Information Part Name HAT2240C-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Apr 05, 2006 page 6 of 6 Sales Strategic Planning Div. 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