2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features • Low on-resistance RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA) • 4 V gate drive devices. • Small package (MPAK) • Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 S 1. Source 2. Gate 3. Drain 2 1 Note: Marking is “ZY–”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % t 2. When using the glass epoxy board (10 mm x 10 mm x 1 mm ) Rev.3.00, Jun.16.2004, page 1 of 6 Ratings 40 ±10 1.0 4.0 1.0 Unit V V A A A 400 150 –55 to +150 mW °C °C 2SK3000 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Drain to source voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Notes: 3. Pulse test Rev.3.00, Jun.16.2004, page 2 of 6 Symbol V(BR)DSS VDS(SUS) V(BR)GSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Min 40 40 ±10 — — 1.1 0.5 — — — — — — — — — Typ — — — — — — 1.2 0.24 0.16 14.0 68 3.0 0.12 0.6 1.7 1.4 Max 60 — — 1.0 ±5 2.1 — 0.5 0.3 — — — — — — — Unit V V V µA µA V S Ω Ω pF pF pF µs µs µs µs Test Conditions ID = 100 µA, VGS = 0 L = 100 µH, ID = 3 A IG = ±100 µA, VDS = 0 VDS = 40 V, VGS = 0 VGS = ±6.5V, VDS = 0 ID = 10 µA, VDS = 5 V ID = 450 mA, VDS = 10 V Note3 ID = 450 mA, VGS = 4V Note3 ID = 450 mA, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 450 mA RL = 22 Ω 2SK3000 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 5 0.8 50 µs s m (1 o sh I D (A) 0.01 4 te No Operation in this area is limited by R DS(on) t) n tio Drain Current 0 Channel Dissipation m s ra pe O 0.1 0.02 s m 10 10 0.2 0.05 m s 0.5 = 0.2 1 1 DC 0.4 1 0.6 PW Pch (W) 0. 2 Ta = 25°C 0 50 100 150 Ambient Temperature 0.05 0.2 200 0.5 1 2 5 10 20 Drain to Source Voltage Ta (°C) 50 100 200 V DS (V) Note4 : When using the glass epoxy board (10mm x 10mm x 1mm t) Typical Transfer Characteristics Typical Output Characteristics 10 10 V 6 V 5V Pulse Test 4V I D (A) 4.0 4.5 V 3.0 3.5 V Drain Current Drain Current I D (A) 5.0 2.0 3V 1.0 1 25°C 100m 125°C Tc = –25°C 10m 1m V DS = 5 V Pulse Test VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 100µ 0 V DS (V) Drain to Source Saturation Voltage V DS(on) (V) 1.0 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 0.6 0.4 ID=2A 1A 0.2 4 8 Rev.3.00, Jun.16.2004, page 3 of 6 12 16 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 3 1 0.3 VGS = 4 V 0.1 10 V 0.03 0.45 A 0 1 2 3 Gate to Source Voltage 20 0.01 0.01 0.03 0.1 0.3 1 3 10 Static Drain to Source on State Resistance vs. Temperature 0.5 ID = 0.45 A 0.4 0.3 VGS = 4 V 0.45 A 0.2 10 V 0.1 0 –40 0 Pulse Test 80 120 160 40 Case Temperature Tc Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance R DS(on) (Ω) 2SK3000 10 5 Tc = –25°C 2 75°C 0.5 0.2 0.1 0.1 100 Coss Ciss 10 5 8 12 200 t d(on) 50 0.05 0.1 1 4 tr 500 100 2 0 tf 1000 50 20 10 t d(off) 2000 Switching Time t (ns) Capacitance C (pF) 0.5 1 2 5 Drain Current I D (A) Switching Characteristics Crss 16 20 Drain to Source Voltage V DS (V) V GS = 4 V, V DD = 10 V PW = 5 µs, duty < 1 % 0.2 0.5 Drain Current 2 1 I D (A) 5 Reverse Drain Current vs. Source to Drain Voltage Drain to Source DiodeReverse Surge Destruction Characteristics 5 500 Ta = 25°C 1 shot 200 Reverse Drain Current I DR (A) Applied Power Ps (W) 0.2 5000 VGS = 0 f = 1 MHz 200 V DS = 10 V Pulse Test (°C) Typical Capacitance vs. Drain to Source Voltage 500 25°C 1 100 50 20 10 5 0.05 0.1 0.2 0.5 1 2 5 10 20 Surge Pulse Width PW (mS) Rev.3.00, Jun.16.2004, page 4 of 6 50 10 V 5V V GS = 0 4 3 2 1 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 V SD (V) 2SK3000 Transient Thermal Resistance 1000 Thermal Resistance θ j–a (°C/W) 300 100 30 10 Condition : Ta = 25°C When using the glass epoxy board (10mm x 10mm x 1mmt ) 3 1 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit 100 1000 Switching Time Waveforms Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 4V 50Ω V DD = 10 V Vout 10% 10% 90% td(on) Rev.3.00, Jun.16.2004, page 5 of 6 tr 10% 90% td(off) tf 2SK3000 Package Dimensions As of January, 2003 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Package Code JEDEC JEITA Mass (reference value) MPAK(T) — Conforms 0.011 g Ordering Information Part Name 2SK3000 Quantity 3000 pcs Shipping Container φ178 mm Reel Taping (TL) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Jun.16.2004, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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