HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0400 Rev.4.00 May 19.2005 Features • Low on-resistance RDS(on) = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 6 G 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current ID Note1 Drain peak current ID (pulse) Body - Drain diode reverse Drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) Rev.4.00 May.19, 2005 page 1 of 6 Ratings 20 ±12 2 8 2 830 150 –55 to +150 Unit V V A A A mW °C °C HAT2203C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 20 ±12 — — 0.4 Typ — Max — Unit V — — — ±10 1 1.4 µA µA V Test conditions ID = 10 mA, VGS = 0 IG = ±10 µA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to Source on state resistance RDS(on) — 69 90 mΩ ID = 1 A, VGS = 4.5 VNote3 RDS(on) — 107 150 mΩ ID = 1 A, VGS = 2.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total Gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 3 — — — — — — — — 4.5 165 50 20 6 5 20 4 1.8 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 1 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz Gate to Source charge Gate to Drain charge Body - Drain diode forward voltage Notes: 3. Pulse test Qgs Qgd VDF — — — 0.4 0.4 0.8 — — 1.1 nC nC V Rev.4.00 May.19, 2005 page 2 of 6 ID = 1 A VGS = 10 V RL = 10 Ω Rg = 4.7 Ω VDD = 10 V VGS = 4.5 V ID = 2 A IF = 2 A, VGS = 0 Note3 HAT2203C Main Characteristics Power vs. Temperature Derating (A) -30 When using the FR4 board. m s Operation in this area is limited by RDS(on) ) °C 25 ID Ta (°C) = -0.01 -0.01 a -0.1 (T 200 s n Case Temperature 150 100 µs tio 100 m ra 50 10 pe -0.3 -0.03 0 1 = O 400 PW -1 C 800 10 µs -10 -3 Drain Current Pch (mW) Ta = 25°C,1 shot Pulse Test Conditions: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) D Channel Dissipation 1200 Maximum Safe Operation Area -100 1600 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics 2.5 V VDS = 10 V Pulse Test 2V 3V 4 1.5 V 2 25°C 8 ID 4.5 V Drain Current 6 Drain Current Pulse Test 8 ID (A) 10 V Typical Transfer Characteristics 10 (A) 10 −25°C 6 Tc = 75 °C 4 2 VGS = 1 V 0 2 4 6 Drain to Source Voltage Pulse Test 300 200 ID = 2 A 100 1A 0.5 A 0 6 2 4 Gate to Source Voltage Rev.4.00 May.19, 2005 page 3 of 6 8 V GS (V) 10 1 2 3 Gate to Source Voltage 4 5 V GS (V) Static Drain to Source on State Resistance vs. Drain Current 1000 Drain to Source On State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage 400 0 8 10 V DS (V) VGS = 2.5V 100 4.5V 10 0.1 Pulse Test Ta = 25 °C 1 Drain Current 10 ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 200 160 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2203C 0.5 A 1A ID = 2 A 120 VGS = 2.5 V 80 0.5 A 2A 4.5 V 40 1A Pulse Test 0 −25 0 25 50 75 Case Temperature 100 125 150 10 3 Tc = −25°C 25°C 1 75°C 0.3 0.1 0.03 0.01 0.01 VDS = 10 V Pulse Test 0.03 Tc ( °C) 0 VDD 4 2 VDD = 20 V 10 V 5V 0.8 1.6 2.4 3.2 Gate Charge Qg (nC) 300 Ciss 100 Coss 30 Crss 10 0 4 8 12 1000 5V VGS = 0 , -5 V 4 24 V DS (V) Switching Characteristics 100 td(off) 10 tr td(on) tf 2 Pulse Test 0 20 16 Drain to Source Voltage Switching Time t (ns) IDR (A) Reverse Drain Current 1000 1 10 6 VGS = 0 f = 1 MHz 3 0 4.0 Reverse Drain Current vs. Source to Drain Voltage 8 10 ID (A) 3000 Capacitance C (pF) 6 VGS (V) VGS VDD = 5 V 10 V 20 V 10 3 10000 8 Gate to Source Voltage VDS (V) Drain to Source Voltage 20 1 Typical Capacitance vs. Drain to Source Voltage 40 30 0.3 Drain Current Dynamic Input Characteristics ID = 2 A 0.1 0.4 0.8 1.2 Source to Drain Voltage Rev.4.00 May.19, 2005 page 4 of 6 1.6 V SD (V) 2.0 1 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 HAT2203C Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 4.7 Ω Vin 4.5 V VDS = 10 V Vout 10% 10% 90% td(on) Rev.4.00 May.19, 2005 page 5 of 6 tr 10% 90% td(off) tf HAT2203C Package Dimensions JEITA Package Code RENESAS Code Package Name PWSF0006JA-A MASS[Typ.] CMFPAK-6 / CMFPAK-6V 0.0065g D A e c E A HE A x M LP L S b A Reference Symbol e A2 A A1 y S S e1 b b1 l1 HE L LP x y c1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b b1 c c1 D E e b2 e1 l1 Dimension in Millimeters Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Ordering Information Part Name HAT2203C-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 May.19, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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