Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 10P50 11P50 -10 -11 A A IDM TC = 25°C, pulse width limited by TJ 10P50 11P50 -40 -44 A A IAR TC = 25°C 10P50 11P50 -10 -11 A A EAR TC = 25°C 30 mJ PD TC = 25°C 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 AD TO-268 (TO-247) 1.13/10 Nm/lb.in. 6 4 g g D G S G = Gate S = Source VDSS V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient -500 VGS(th) V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient -3.0 IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = 0.8 • VDSS V GS = 0 V RDS(on) V GS = -10 V, ID = 0.5 • ID25 -5.0 -0.122 TJ = 25°C TJ = 125°C 10P50 11P50 RDS(on) Temperature Coefficient © 2002 IXYS All rights reserved V %/K 0.054 V %/K ±100 nA -200 -1 µA mA D (TAB) D = Drain TAB = Drain Features z z Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. (TAB) TO-268 (IXTT) Case Style z Test Conditions RDS(on) TO-247 AD (IXTH) z Symbol ID25 z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density 0.90 Ω 0.75 Ω 0.6 %/K 94535F (7/02) IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = -10 V; ID = ID25, pulse test 5 9 S 4700 pF 430 pF Crss 135 pF td(on) 33 ns TO-247 AD Outline 1 Ciss Coss V GS = 0 V, VDS = -25 V, f = 1 MHz tr V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 ns td(off) RG = 4.7 Ω (External) 35 ns 35 ns 160 nC 46 nC 92 nC tf Qg(on) Qgs V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS 0.42 (TO-247) Source-Drain Diode 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 10P50 11P50 -10 -11 A A ISM Repetitive; pulse width limited by TJM 10P50 11P50 -40 -44 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % -3 V t rr IF = IS, di/dt = 100 A/µs 500 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline ns Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1