Advanced Technical Information IXGQ 35N120BD1 High Voltage IGBT with Diode VCES IC25 VCE(sat) tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75 A IC110 TC = 110°C 35 A IF110 ICM TC = 110°C TC = 25°C, 1 ms 8 200 A A SSOA (RBSOA) VGE = 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load ICM = 120 @0.8 VCES A PC TC = 25°C 400 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s G 6 C E G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features z z z z Weight V A V ns TO-3P (IXGQ) °C 300 = 1200 = 75 = 3.3 = 160 g International standard packages IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 250 µA, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 35A, VGE = 15 V Note 2 © 2004 IXYS All rights reserved 2.5 T=25°C T=125°C 2.7 5.0 V 50 250 µA µA ±100 nA 3.3 V z z z Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost DS99195(07/04) IXGQ 35N120BD1 Symbol Test Conditions gfs IC = 35A; VCE = 10 V, Note 2. Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 28 38 S 2300 pF 190 pF Cres 80 pF Qg 140 nC 20 nC 50 nC 40 ns 50 0.9 ns mJ Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 40A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°°C IC = 35 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 3 Ω Note 1. Eoff td(on) tri Eon Inductive load, TJ = 125°°C IC = 35A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 3 Ω 270 500 ns 160 300 ns 3.8 7.0 mJ 45 ns 60 ns 1.9 mJ 380 ns tfi 400 ns Eoff 8.0 mJ td(off) Note 1 0.35 K/W RthJC RthCK 0.25 Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V, TJ = 125°C 3.3 2.2 IRM IF = 10 A; -diF/dt = 100 A/µs, VR = 100 V t rr VGE = 0 V; TJ = 125°C t rr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V V V 4.0 A 190 ns 40 ns 2.5 K/W RthJC Notes: TO-3P (IXGQ) Outline 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXGQ 35N120BD1 © 2004 IXYS All rights reserved IXGQ 35N120BD1 IXYS reserves the right to change limits, test conditions, and dimensions. IXGQ 35N120BD1 © 2004 IXYS All rights reserved IXGQ 35N120BD1 30 2000 A IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 1000 15 40 TVJ= 100°C VR = 600V 30 IF= 20A IF= 10A IF= 5A 20 TVJ=100°C 10 500 TVJ= 25°C 10 5 0 0 1 2 3 VF 0 100 4V Fig. 18. Forward current IF versus VF Fig. 19. Reverse recovery charge Qr versus -diF/dt 150 2.0 140 130 1.0 110 0.5 0.0 Qr 0 40 600 A/µs 800 1000 -diF/dt TVJ= 100°C IF = 10A V tfr 1.2 µs tfr VFR 80 0.8 40 0.4 100 80 120 °C 160 90 0 200 400 600 TVJ 800 1000 A/µs 0 0 200 400 -diF/dt Fig. 21. Dynamic parameters Qr, IRM versus TVJ Fig. 22. Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/µs 800 1000 diF/dt Fig. 23. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC 0.1 0.01 0.001 0.00001 400 IF= 20A IF= 10A IF= 5A 120 IRM 200 Fig. 20. Peak reverse current IRM versus -diF/dt VFR trr Kf 0 120 TVJ= 100°C VR = 600V ns 1.5 0 A/µs 1000 -diF/dt DSEP 8-12A 0.0001 0.001 0.01 0.1 Fig. 24. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. t s 1 Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017